Vote for your favorite mineral in #MinCup25! - Carpathite vs. Leucite
Brace for oddness in a match between one of the very few hydrocarbon minerals carpathite and the temperature-flipping mineral leucite.
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Aydin, C., Zaslavsky, A., Luryi, S., Cristoloveanu, S., Mariolle, D., Fraboulet, D., Deleonibus, S. (2004) Lateral interband tunneling transistor in silicon-on-insulator. Applied Physics Letters, 84 (10). 1780-1782 doi:10.1063/1.1668321

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleLateral interband tunneling transistor in silicon-on-insulator
JournalApplied Physics Letters
AuthorsAydin, C.Author
Zaslavsky, A.Author
Luryi, S.Author
Cristoloveanu, S.Author
Mariolle, D.Author
Fraboulet, D.Author
Deleonibus, S.Author
Year2004 (March 8)Volume84
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.1668321Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8538008Long-form Identifiermindat:1:5:8538008:6
GUID0
Full ReferenceAydin, C., Zaslavsky, A., Luryi, S., Cristoloveanu, S., Mariolle, D., Fraboulet, D., Deleonibus, S. (2004) Lateral interband tunneling transistor in silicon-on-insulator. Applied Physics Letters, 84 (10). 1780-1782 doi:10.1063/1.1668321
Plain TextAydin, C., Zaslavsky, A., Luryi, S., Cristoloveanu, S., Mariolle, D., Fraboulet, D., Deleonibus, S. (2004) Lateral interband tunneling transistor in silicon-on-insulator. Applied Physics Letters, 84 (10). 1780-1782 doi:10.1063/1.1668321
In(2004, March) Applied Physics Letters Vol. 84 (10) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Zaslavsky, A., Aydin, C., Luryi, S., Cristoloveanu, S., Mariolle, D., Fraboulet, D., Deleonibus, S. (2003) Ultrathin silicon-on-insulator vertical tunneling transistor. Applied Physics Letters, 83 (8). 1653-1655 doi:10.1063/1.1600832
Wan, J., Le Royer, C., Zaslavsky, A., Cristoloveanu, S. (2011) A tunneling field effect transistor model combining interband tunneling with channel transport. Journal of Applied Physics, 110 (10). 104503pp. doi:10.1063/1.3658871
Kazazis, D., Jannaty, P., Zaslavsky, A., Le Royer, C., Tabone, C., Clavelier, L., Cristoloveanu, S. (2009) Tunneling field-effect transistor with epitaxial junction in thin germanium-on-insulator. Applied Physics Letters, 94 (26). 263508pp. doi:10.1063/1.3168646
Zaslavsky, A., Soliveres, S., Le Royer, C., Cristoloveanu, S., Clavelier, L., Deleonibus, S. (2007) Negative transconductance in double-gate germanium-on-insulator field effect transistors. Applied Physics Letters, 91 (18). 183511pp. doi:10.1063/1.2802074
Dobrovolsky, V., Pavljuk, S., Rossokhaty, V., Cristoloveanu, S. (2006) Silicon-on-insulator control impact-ionization-avalanche transistor. Applied Physics Letters, 88 (7). 73502pp. doi:10.1063/1.2177367
Boehm, M., Hofheinz, M., Jehl, X., Sanquer, M., Vinet, M., Previtali, B., Fraboulet, D., Mariolle, D., Deleonibus, S. (2005) Size scaling of the addition spectra in silicon quantum dots. Physical Review B, 71 (3) doi:10.1103/physrevb.71.033305
Wan, J., Le Royer, C., Zaslavsky, A., Cristoloveanu, S. (2010) Low-frequency noise behavior of tunneling field effect transistors. Applied Physics Letters, 97 (24). 243503pp. doi:10.1063/1.3526722
Allibert, F., Pretet, J., Pananakakis, G., Cristoloveanu, S. (2004) Transition from partial to full depletion in silicon-on-insulator transistors: Impact of channel length. Applied Physics Letters, 84 (7). 1192-1194 doi:10.1063/1.1646461
Dupré, C., Ernst, T., Hartmann, J.-M., Andrieu, F., Barnes, J.-P., Rivallin, P., Faynot, O., Deleonibus, S., Fazzini, P. F., Claverie, A., Cristoloveanu, S., Ghibaudo, G., Cristiano, F. (2007) Carrier mobility degradation due to high dose implantation in ultrathin unstrained and strained silicon-on-insulator films. Journal of Applied Physics, 102 (10). 104505pp. doi:10.1063/1.2811922
Diab, A., Pirro, L., Ionica, I., Mescot, X., Ghibaudo, G., Cristoloveanu, S. (2012) Low-temperature pseudo-metal-oxide-semiconductor field-effect transistor measurements on bare silicon-on-insulator wafers. Applied Physics Letters, 101 (9). 92110pp. doi:10.1063/1.4748984
Jun, B., White, Y. V., Schrimpf, R. D., Fleetwood, D. M., Brunier, F., Bresson, N., Cristoloveanu, S., Tolk, N. H. (2004) Characterization of multiple Si∕SiO2 interfaces in silicon-on-insulator materials via second-harmonic generation. Applied Physics Letters, 85 (15). 3095-3097 doi:10.1063/1.1807011
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 6, 2025 22:08:49
Go to top of page