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Xia, Jun, Mandelis, Andreas (2010) Direct-search deep level photothermal spectroscopy: An enhanced reliability method for overlapped semiconductor defect state characterization. Applied Physics Letters, 96 (26). 262112pp. doi:10.1063/1.3458827

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Reference TypeJournal (article/letter/editorial)
TitleDirect-search deep level photothermal spectroscopy: An enhanced reliability method for overlapped semiconductor defect state characterization
JournalApplied Physics Letters
AuthorsXia, JunAuthor
Mandelis, AndreasAuthor
Year2010 (June 28)Volume96
Issue26
PublisherAIP Publishing
DOIdoi:10.1063/1.3458827Search in ResearchGate
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Mindat Ref. ID8584765Long-form Identifiermindat:1:5:8584765:1
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Full ReferenceXia, Jun, Mandelis, Andreas (2010) Direct-search deep level photothermal spectroscopy: An enhanced reliability method for overlapped semiconductor defect state characterization. Applied Physics Letters, 96 (26). 262112pp. doi:10.1063/1.3458827
Plain TextXia, Jun, Mandelis, Andreas (2010) Direct-search deep level photothermal spectroscopy: An enhanced reliability method for overlapped semiconductor defect state characterization. Applied Physics Letters, 96 (26). 262112pp. doi:10.1063/1.3458827
In(2010, June) Applied Physics Letters Vol. 96 (26) AIP Publishing

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Xia, Jun, Mandelis, Andreas (2009) Broadening effects and ergodicity in deep level photothermal spectroscopy of defect states in semi-insulating GaAs: A combined temperature-, pulse-rate-, and time-domain study of defect state kinetics. Journal of Applied Physics, 105 (10). 103712pp. doi:10.1063/1.3131673
Mandelis, Andreas, Xia, Jun (2008) Deep level photothermal spectroscopy: Physical principles and applications to semi-insulating GaAs band-gap multiple trap states. Journal of Applied Physics, 103 (4). 43704pp. doi:10.1063/1.2842401
Xia, Jun, Mandelis, Andreas (2007) Noncontact deep level photo-thermal spectroscopy: Technique and application to semi-insulating GaAs Wafers. Applied Physics Letters, 90 (6). 62119pp. doi:10.1063/1.2437686
Mandelis, Andreas, Xia, Jun (2010) Broadening effects and ergodicity in deep level photo-thermal spectroscopy of defect states in semi-insulating GaAs: A combined temperature-, pulse-rate- and time-domain study of defect state kinetics. Journal of Physics: Conference Series, 214. 12001pp. doi:10.1088/1742-6596/214/1/012001
Tavakolian, Pantea, Sivagurunathan, Koneswaran, Mandelis, Andreas (2017) Enhanced truncated-correlation photothermal coherence tomography with application to deep subsurface defect imaging and 3-dimensional reconstructions. Journal of Applied Physics, 122 (2). 23103pp. doi:10.1063/1.4992807
Mandelis, A., Budiman, R. A., Vargas, M., Wolff, D. (1995) Noncontact photothermal infrared radiometric deepā€level transient spectroscopy of GaAs wafers. Applied Physics Letters, 67 (11). 1582-1584 doi:10.1063/1.114946
Salnick, A., Mandelis, A., Jean, C. (1997) Infrared photothermal radiometric deep-level transient spectroscopy of shallow B+ dopant states in p-Si. Applied Physics Letters, 71 (18). 2671-2673 doi:10.1063/1.120174
Bialkowski, Stephen E., Mandelis, Andreas (1996) Photothermal Spectroscopy Methods for Chemical Analysis. Physics Today, 49. 76 doi:10.1063/1.2807813
Chen, Zhuohui, Mandelis, Andreas (1991) Effects of secondary laser illumination during the transient measurement in optical and electrical deep level transient spectroscopy. Applied Physics Letters, 59 (15). 1861-1863 doi:10.1063/1.106169
Wang, Chinhua, Mandelis, Andreas, Liu, Yue (2004) Photothermal Radiometry with Solid Cylindrical Samples. Journal of Applied Physics, 96 (7). 3756-3762 doi:10.1063/1.1779973
Mandelis, Andreas (1983) Absolute optical absorption coefficient measurements using transverse photothermal deflection spectroscopy. Journal of Applied Physics, 54 (6). 3404-3409 doi:10.1063/1.332454
 
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