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Ghaffarzadeh, Khashayar, Nathan, Arokia, Robertson, John, Kim, Sangwook, Jeon, Sanghun, Kim, Changjung, Chung, U-In, Lee, Je-Hun (2010) Instability in threshold voltage and subthreshold behavior in Hf–In–Zn–O thin film transistors induced by bias-and light-stress. Applied Physics Letters, 97 (11). 113504pp. doi:10.1063/1.3480547

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Reference TypeJournal (article/letter/editorial)
TitleInstability in threshold voltage and subthreshold behavior in Hf–In–Zn–O thin film transistors induced by bias-and light-stress
JournalApplied Physics Letters
AuthorsGhaffarzadeh, KhashayarAuthor
Nathan, ArokiaAuthor
Robertson, JohnAuthor
Kim, SangwookAuthor
Jeon, SanghunAuthor
Kim, ChangjungAuthor
Chung, U-InAuthor
Lee, Je-HunAuthor
Year2010 (September 13)Volume97
Issue11
PublisherAIP Publishing
DOIdoi:10.1063/1.3480547Search in ResearchGate
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Mindat Ref. ID8586424Long-form Identifiermindat:1:5:8586424:1
GUID0
Full ReferenceGhaffarzadeh, Khashayar, Nathan, Arokia, Robertson, John, Kim, Sangwook, Jeon, Sanghun, Kim, Changjung, Chung, U-In, Lee, Je-Hun (2010) Instability in threshold voltage and subthreshold behavior in Hf–In–Zn–O thin film transistors induced by bias-and light-stress. Applied Physics Letters, 97 (11). 113504pp. doi:10.1063/1.3480547
Plain TextGhaffarzadeh, Khashayar, Nathan, Arokia, Robertson, John, Kim, Sangwook, Jeon, Sanghun, Kim, Changjung, Chung, U-In, Lee, Je-Hun (2010) Instability in threshold voltage and subthreshold behavior in Hf–In–Zn–O thin film transistors induced by bias-and light-stress. Applied Physics Letters, 97 (11). 113504pp. doi:10.1063/1.3480547
In(2010, September) Applied Physics Letters Vol. 97 (11) AIP Publishing


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