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Seo, David, Jeon, Sanghun, Seo, Sunae, Song, Ihun, Kim, Changjung, Park, Sungho, Harris, James S., Chung, U.-In (2010) Fully transparent InGaZnO thin film transistors using indium tin oxide/graphene multilayer as source/drain electrodes. Applied Physics Letters, 97 (17). 172106pp. doi:10.1063/1.3490245

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Reference TypeJournal (article/letter/editorial)
TitleFully transparent InGaZnO thin film transistors using indium tin oxide/graphene multilayer as source/drain electrodes
JournalApplied Physics Letters
AuthorsSeo, DavidAuthor
Jeon, SanghunAuthor
Seo, SunaeAuthor
Song, IhunAuthor
Kim, ChangjungAuthor
Park, SunghoAuthor
Harris, James S.Author
Chung, U.-InAuthor
Year2010 (October 25)Volume97
Issue17
PublisherAIP Publishing
DOIdoi:10.1063/1.3490245Search in ResearchGate
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Mindat Ref. ID8587546Long-form Identifiermindat:1:5:8587546:9
GUID0
Full ReferenceSeo, David, Jeon, Sanghun, Seo, Sunae, Song, Ihun, Kim, Changjung, Park, Sungho, Harris, James S., Chung, U.-In (2010) Fully transparent InGaZnO thin film transistors using indium tin oxide/graphene multilayer as source/drain electrodes. Applied Physics Letters, 97 (17). 172106pp. doi:10.1063/1.3490245
Plain TextSeo, David, Jeon, Sanghun, Seo, Sunae, Song, Ihun, Kim, Changjung, Park, Sungho, Harris, James S., Chung, U.-In (2010) Fully transparent InGaZnO thin film transistors using indium tin oxide/graphene multilayer as source/drain electrodes. Applied Physics Letters, 97 (17). 172106pp. doi:10.1063/1.3490245
In(2010, October) Applied Physics Letters Vol. 97 (17) AIP Publishing

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