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Polojärvi, V., Salmi, J., Schramm, A., Tukiainen, A., Guina, M., Pakarinen, J., Arola, E., Lång, J., Väyrynen, I. J., Laukkanen, P. (2010) Effects of (NH4)2S and NH4OH surface treatments prior to SiO2 capping and thermal annealing on 1.3 μm GaInAsN/GaAs quantum well structures. Applied Physics Letters, 97 (11). 111109pp. doi:10.1063/1.3487784

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Reference TypeJournal (article/letter/editorial)
TitleEffects of (NH4)2S and NH4OH surface treatments prior to SiO2 capping and thermal annealing on 1.3 μm GaInAsN/GaAs quantum well structures
JournalApplied Physics Letters
AuthorsPolojärvi, V.Author
Salmi, J.Author
Schramm, A.Author
Tukiainen, A.Author
Guina, M.Author
Pakarinen, J.Author
Arola, E.Author
Lång, J.Author
Väyrynen, I. J.Author
Laukkanen, P.Author
Year2010 (September 13)Volume97
Issue11
PublisherAIP Publishing
DOIdoi:10.1063/1.3487784Search in ResearchGate
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Mindat Ref. ID8586467Long-form Identifiermindat:1:5:8586467:6
GUID0
Full ReferencePolojärvi, V., Salmi, J., Schramm, A., Tukiainen, A., Guina, M., Pakarinen, J., Arola, E., Lång, J., Väyrynen, I. J., Laukkanen, P. (2010) Effects of (NH4)2S and NH4OH surface treatments prior to SiO2 capping and thermal annealing on 1.3 μm GaInAsN/GaAs quantum well structures. Applied Physics Letters, 97 (11). 111109pp. doi:10.1063/1.3487784
Plain TextPolojärvi, V., Salmi, J., Schramm, A., Tukiainen, A., Guina, M., Pakarinen, J., Arola, E., Lång, J., Väyrynen, I. J., Laukkanen, P. (2010) Effects of (NH4)2S and NH4OH surface treatments prior to SiO2 capping and thermal annealing on 1.3 μm GaInAsN/GaAs quantum well structures. Applied Physics Letters, 97 (11). 111109pp. doi:10.1063/1.3487784
In(2010, September) Applied Physics Letters Vol. 97 (11) AIP Publishing

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