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Hakkarainen, T. V., Tommila, J., Schramm, A., Tukiainen, A., Ahorinta, R., Dumitrescu, M., Guina, M. (2010) Structural and optical properties of InAs quantum dot chains grown on nanoimprint lithography structured GaAs with different pattern orientations. Applied Physics Letters, 97 (17). 173107pp. doi:10.1063/1.3506903

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Reference TypeJournal (article/letter/editorial)
TitleStructural and optical properties of InAs quantum dot chains grown on nanoimprint lithography structured GaAs with different pattern orientations
JournalApplied Physics Letters
AuthorsHakkarainen, T. V.Author
Tommila, J.Author
Schramm, A.Author
Tukiainen, A.Author
Ahorinta, R.Author
Dumitrescu, M.Author
Guina, M.Author
Year2010 (October 25)Volume97
Issue17
PublisherAIP Publishing
DOIdoi:10.1063/1.3506903Search in ResearchGate
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Mindat Ref. ID8587656Long-form Identifiermindat:1:5:8587656:5
GUID0
Full ReferenceHakkarainen, T. V., Tommila, J., Schramm, A., Tukiainen, A., Ahorinta, R., Dumitrescu, M., Guina, M. (2010) Structural and optical properties of InAs quantum dot chains grown on nanoimprint lithography structured GaAs with different pattern orientations. Applied Physics Letters, 97 (17). 173107pp. doi:10.1063/1.3506903
Plain TextHakkarainen, T. V., Tommila, J., Schramm, A., Tukiainen, A., Ahorinta, R., Dumitrescu, M., Guina, M. (2010) Structural and optical properties of InAs quantum dot chains grown on nanoimprint lithography structured GaAs with different pattern orientations. Applied Physics Letters, 97 (17). 173107pp. doi:10.1063/1.3506903
In(2010, October) Applied Physics Letters Vol. 97 (17) AIP Publishing

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Hakkarainen, T. V., Schramm, A., Tommila, J., Guina, M. (2012) The effect of InGaAs strain-reducing layer on the optical properties of InAs quantum dot chains grown on patterned GaAs(100). Journal of Applied Physics, 111 (1). 14306pp. doi:10.1063/1.3675271
Tommila, J., Tukiainen, A., Viheriälä, J., Schramm, A., Hakkarainen, T., Aho, A., Stenberg, P., Dumitrescu, M., Guina, M. (2011) Nanoimprint lithography patterned GaAs templates for site-controlled InAs quantum dots. Journal of Crystal Growth, 323 (1). 183-186 doi:10.1016/j.jcrysgro.2010.11.165
Tukiainen, A., Tommila, J., Aho, A., Schramm, A., Viheriälä, J., Ahorinta, R., Dumitrescu, M., Pessa, M., Guina, M. (2011) Selective growth of GaAs nanostructures and subsequent guided self-assembly of InAs quantum dots on nanoimprint lithography patterned SiO2/GaAs substrates. Journal of Crystal Growth, 323 (1). 201-205 doi:10.1016/j.jcrysgro.2010.12.084
Hakkarainen, T.V., Schramm, A., Luna, E., Tommila, J., Guina, M. (2013) Temperature dependence of photoluminescence for site-controlled InAs/GaAs quantum dot chains. Journal of Crystal Growth, 378. 470-474 doi:10.1016/j.jcrysgro.2012.12.099
Tommila, J., Belykh, V. V., Hakkarainen, T. V., Heinonen, E., Sibeldin, N. N., Schramm, A., Guina, M. (2014) Cavity-enhanced single photon emission from site-controlled In(Ga)As quantum dots fabricated using nanoimprint lithography. Applied Physics Letters, 104 (21). 213104pp. doi:10.1063/1.4879845
Hakkarainen, T. V., Luna, E., Tommila, J., Schramm, A., Guina, M. (2013) Impact of the non-planar morphology of pre-patterned substrates on the structural and electronic properties of embedded site-controlled InAs quantum dots. Journal of Applied Physics, 114 (17). 174304pp. doi:10.1063/1.4828734
Polojärvi, V., Salmi, J., Schramm, A., Tukiainen, A., Guina, M., Pakarinen, J., Arola, E., Lång, J., Väyrynen, I. J., Laukkanen, P. (2010) Effects of (NH4)2S and NH4OH surface treatments prior to SiO2 capping and thermal annealing on 1.3 μm GaInAsN/GaAs quantum well structures. Applied Physics Letters, 97 (11). 111109pp. doi:10.1063/1.3487784
Pavelescu, E.-M., Gheorghiu, A., Dumitrescu, M., Tukiainen, A., Jouhti, T., Hakkarainen, T., Kudrawiec, R., Andrzejewski, J., Misiewicz, J., Tkachenko, N., Dhaka, V. D. S., Lemmetyinen, H., Pessa, M. (2004) Electron-irradiation enhanced photoluminescence from GaInNAs∕GaAs quantum wells subject to thermal annealing. Applied Physics Letters, 85 (25). 6158-6160 doi:10.1063/1.1834997
Cheng, Chien-Chia, Meneou, K., Cheng, K. Y. (2009) High optical quality InAs site-controlled quantum dots grown on soft photocurable nanoimprint lithography patterned GaAs substrates. Applied Physics Letters, 95 (17). 173108pp. doi:10.1063/1.3255015
Kudrawiec, R., Gladysiewicz, M., Misiewicz, J., Korpijärvi, V.-M., Pakarinen, J., Puustinen, J., Laukkanen, P., Laakso, A., Guina, M., Dumitrescu, M., Pessa, M. (2010) Contactless electroreflectance study of band bending in Be-doped GaInNAs/GaAs quantum wells: The origin of photoluminescence enhancement. Applied Physics Letters, 97 (2). 21902pp. doi:10.1063/1.3462299
Pakarinen, J., Polojärvi, V., Aho, A., Laukkanen, P., Peng, C. S., Schramm, A., Tukiainen, A., Pessa, M. (2009) Annealing of self-assembled InAs/GaAs quantum dots: A stabilizing effect of beryllium doping. Applied Physics Letters, 94 (7). 72105pp. doi:10.1063/1.3086298
 
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