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Lee, Joonmyoung, Bourim, El Mostafa, Lee, Wootae, Park, Jubong, Jo, Minseok, Jung, Seungjae, Shin, Jungho, Hwang, Hyunsang (2010) Effect of ZrOx/HfOx bilayer structure on switching uniformity and reliability in nonvolatile memory applications. Applied Physics Letters, 97 (17). 172105pp. doi:10.1063/1.3491803

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Reference TypeJournal (article/letter/editorial)
TitleEffect of ZrOx/HfOx bilayer structure on switching uniformity and reliability in nonvolatile memory applications
JournalApplied Physics Letters
AuthorsLee, JoonmyoungAuthor
Bourim, El MostafaAuthor
Lee, WootaeAuthor
Park, JubongAuthor
Jo, MinseokAuthor
Jung, SeungjaeAuthor
Shin, JunghoAuthor
Hwang, HyunsangAuthor
Year2010 (October 25)Volume97
Issue17
PublisherAIP Publishing
DOIdoi:10.1063/1.3491803Search in ResearchGate
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Mindat Ref. ID8587554Long-form Identifiermindat:1:5:8587554:8
GUID0
Full ReferenceLee, Joonmyoung, Bourim, El Mostafa, Lee, Wootae, Park, Jubong, Jo, Minseok, Jung, Seungjae, Shin, Jungho, Hwang, Hyunsang (2010) Effect of ZrOx/HfOx bilayer structure on switching uniformity and reliability in nonvolatile memory applications. Applied Physics Letters, 97 (17). 172105pp. doi:10.1063/1.3491803
Plain TextLee, Joonmyoung, Bourim, El Mostafa, Lee, Wootae, Park, Jubong, Jo, Minseok, Jung, Seungjae, Shin, Jungho, Hwang, Hyunsang (2010) Effect of ZrOx/HfOx bilayer structure on switching uniformity and reliability in nonvolatile memory applications. Applied Physics Letters, 97 (17). 172105pp. doi:10.1063/1.3491803
In(2010, October) Applied Physics Letters Vol. 97 (17) AIP Publishing

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