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Liu, Zuoguang, Ma, T. P. (2010) Determination of energy and spatial distributions of traps in ultrathin dielectrics by use of inelastic electron tunneling spectroscopy. Applied Physics Letters, 97 (17). 172102pp. doi:10.1063/1.3506904

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Reference TypeJournal (article/letter/editorial)
TitleDetermination of energy and spatial distributions of traps in ultrathin dielectrics by use of inelastic electron tunneling spectroscopy
JournalApplied Physics Letters
AuthorsLiu, ZuoguangAuthor
Ma, T. P.Author
Year2010 (October 25)Volume97
Issue17
PublisherAIP Publishing
DOIdoi:10.1063/1.3506904Search in ResearchGate
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Mindat Ref. ID8587659Long-form Identifiermindat:1:5:8587659:2
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Full ReferenceLiu, Zuoguang, Ma, T. P. (2010) Determination of energy and spatial distributions of traps in ultrathin dielectrics by use of inelastic electron tunneling spectroscopy. Applied Physics Letters, 97 (17). 172102pp. doi:10.1063/1.3506904
Plain TextLiu, Zuoguang, Ma, T. P. (2010) Determination of energy and spatial distributions of traps in ultrathin dielectrics by use of inelastic electron tunneling spectroscopy. Applied Physics Letters, 97 (17). 172102pp. doi:10.1063/1.3506904
In(2010, October) Applied Physics Letters Vol. 97 (17) AIP Publishing

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He, Wei, Ma, T. P. (2003) Inelastic electron tunneling spectroscopy study of traps in ultrathin high-k gate dielectrics. Applied Physics Letters, 83 (26). 5461-5463 doi:10.1063/1.1636519
Liu, Zuoguang, Cui, Sharon, Kornblum, Lior, Eizenberg, Moshe, Chang, Ming-Feng, Ma, T. P. (2010) Inelastic electron tunneling spectroscopy study of ultrathin Al2O3–TiO2 dielectric stack on Si. Applied Physics Letters, 97 (20). 202905pp. doi:10.1063/1.3518478
Wang, Miaomiao, He, Wei, Ma, T. P. (2005) Electron tunneling spectroscopy study of traps in high-k gate dielectrics: Determination of physical locations and energy levels of traps. Applied Physics Letters, 86 (19). 192113pp. doi:10.1063/1.1924893
Reiner, James W., Cui, Sharon, Liu, Zuoguang, Wang, Miaomiao, Ahn, Charles H., Ma, T. P. (2010) Inelastic Electron Tunneling Spectroscopy Study of Thin Gate Dielectrics. Advanced Materials, 22. 2962-2968 doi:10.1002/adma.200904311
He, Wei, Ma, T. P. (2003) Inelastic electron tunneling spectroscopy study of ultrathin HfO2 and HfAlO. Applied Physics Letters, 83 (13). 2605-2607 doi:10.1063/1.1614837
Stegmann, Heiko, Zschech, Ehrenfried (2003) Compositional analysis of ultrathin silicon oxynitride gate dielectrics by quantitative electron energy loss spectroscopy. Applied Physics Letters, 83 (24). 5017-5019 doi:10.1063/1.1633674
Liu, Zuoguang, Guo, Dechao, Xiu, Kai, Henson, William Kirklen, Oldiges, Philip J. (2010) Intrinsic effective mobility extraction with extremely scaled gate dielectrics. Applied Physics Letters, 97 (2). 23509pp. doi:10.1063/1.3464565
Yang, Jie, Cui, Sharon, Ma, T. P., Hung, Ting-Hsiang, Nath, Digbijoy, Krishnamoorthy, Sriram, Rajan, Siddharth (2013) Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors. Applied Physics Letters, 103 (22). 223507pp. doi:10.1063/1.4834698
Schüler, Michael, Pavlyukh, Yaroslav, Berakdar, Jamal (2010) Ultrafast control of inelastic tunneling in a double semiconductor quantum well. Applied Physics Letters, 97 (17). 172103pp. doi:10.1063/1.3505502
Nakhmedov, E. P., Radehaus, C., Wieczorek, K. (2005) Study of direct tunneling current oscillations in ultrathin gate dielectrics. Journal of Applied Physics, 97 (6). 64107pp. doi:10.1063/1.1861153
Ryan, J. T., Lenahan, P. M., Krishnan, A. T., Krishnan, S. (2010) Spin dependent tunneling spectroscopy in 1.2 nm dielectrics. Journal of Applied Physics, 108 (6). 64511pp. doi:10.1063/1.3482071
 
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