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He, Wei, Ma, T. P. (2003) Inelastic electron tunneling spectroscopy study of ultrathin HfO2 and HfAlO. Applied Physics Letters, 83 (13). 2605-2607 doi:10.1063/1.1614837

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Reference TypeJournal (article/letter/editorial)
TitleInelastic electron tunneling spectroscopy study of ultrathin HfO2 and HfAlO
JournalApplied Physics Letters
AuthorsHe, WeiAuthor
Ma, T. P.Author
Year2003 (September 29)Volume83
Issue13
PublisherAIP Publishing
DOIdoi:10.1063/1.1614837Search in ResearchGate
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Mindat Ref. ID8536427Long-form Identifiermindat:1:5:8536427:3
GUID0
Full ReferenceHe, Wei, Ma, T. P. (2003) Inelastic electron tunneling spectroscopy study of ultrathin HfO2 and HfAlO. Applied Physics Letters, 83 (13). 2605-2607 doi:10.1063/1.1614837
Plain TextHe, Wei, Ma, T. P. (2003) Inelastic electron tunneling spectroscopy study of ultrathin HfO2 and HfAlO. Applied Physics Letters, 83 (13). 2605-2607 doi:10.1063/1.1614837
In(2003, September) Applied Physics Letters Vol. 83 (13) AIP Publishing

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He, Wei, Ma, T. P. (2003) Inelastic electron tunneling spectroscopy study of traps in ultrathin high-k gate dielectrics. Applied Physics Letters, 83 (26). 5461-5463 doi:10.1063/1.1636519
Liu, Zuoguang, Ma, T. P. (2010) Determination of energy and spatial distributions of traps in ultrathin dielectrics by use of inelastic electron tunneling spectroscopy. Applied Physics Letters, 97 (17). 172102pp. doi:10.1063/1.3506904
Liu, Zuoguang, Cui, Sharon, Kornblum, Lior, Eizenberg, Moshe, Chang, Ming-Feng, Ma, T. P. (2010) Inelastic electron tunneling spectroscopy study of ultrathin Al2O3–TiO2 dielectric stack on Si. Applied Physics Letters, 97 (20). 202905pp. doi:10.1063/1.3518478
Scalise, E., Houssa, M., Pourtois, G., Afanas’ev, V. V., Stesmans, A. (2011) Inelastic electron tunneling spectroscopy of HfO2 gate stacks: A study based on first-principles modeling. Applied Physics Letters, 99 (13). 132101pp. doi:10.1063/1.3644158
Wang, Miaomiao, He, Wei, Ma, T. P. (2005) Electron tunneling spectroscopy study of traps in high-k gate dielectrics: Determination of physical locations and energy levels of traps. Applied Physics Letters, 86 (19). 192113pp. doi:10.1063/1.1924893
Wang, M., He, W., Ma, T. P., Edge, L. F., Schlom, D. G. (2007) Electron tunneling spectroscopy study of amorphous films of the gate dielectric candidates LaAlO3 and LaScO3. Applied Physics Letters, 90 (5). 53502pp. doi:10.1063/1.2437128
Winslow, D. W., Johnson, J. P., Williams, C. C. (2011) Nanometer scale study of HfO2 trap states using single electron tunneling force spectroscopy. Applied Physics Letters, 98 (17). 172903pp. doi:10.1063/1.3580767
Chan, K. C., Lee, P. F., Dai, J. Y. (2008) Single electron tunneling and Coulomb blockade effect in HfAlO∕Au nanocrystals/HfAlO trilayer nonvolatile memory structure. Applied Physics Letters, 92 (14). 143117pp. doi:10.1063/1.2908961
Chan, K. S. (2003) Dynamical analysis of carrier concentration in inelastic resonant tunneling. Applied Physics Letters, 83 (4). 692-694 doi:10.1063/1.1594827
Mallik, R. R., Butler, T., Kulnis, W. J., DeVier, B. (1993) Inelastic electron tunneling spectroscopy and atomic force microscopy investigation of ultrathin sputtered amorphous silica films on gold. Journal of Applied Physics, 73 (5). 2347-2352 doi:10.1063/1.353112
Yang, Jie, Cui, Sharon, Ma, T. P., Hung, Ting-Hsiang, Nath, Digbijoy, Krishnamoorthy, Sriram, Rajan, Siddharth (2013) Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors. Applied Physics Letters, 103 (22). 223507pp. doi:10.1063/1.4834698
 
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