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Koblmüller, G., Reurings, F., Tuomisto, F., Speck, J. S. (2010) Influence of Ga/N ratio on morphology, vacancies, and electrical transport in GaN grown by molecular beam epitaxy at high temperature. Applied Physics Letters, 97 (19). 191915pp. doi:10.1063/1.3514236

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Reference TypeJournal (article/letter/editorial)
TitleInfluence of Ga/N ratio on morphology, vacancies, and electrical transport in GaN grown by molecular beam epitaxy at high temperature
JournalApplied Physics Letters
AuthorsKoblmüller, G.Author
Reurings, F.Author
Tuomisto, F.Author
Speck, J. S.Author
Year2010 (November 8)Volume97
Issue19
PublisherAIP Publishing
DOIdoi:10.1063/1.3514236Search in ResearchGate
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Mindat Ref. ID8587952Long-form Identifiermindat:1:5:8587952:6
GUID0
Full ReferenceKoblmüller, G., Reurings, F., Tuomisto, F., Speck, J. S. (2010) Influence of Ga/N ratio on morphology, vacancies, and electrical transport in GaN grown by molecular beam epitaxy at high temperature. Applied Physics Letters, 97 (19). 191915pp. doi:10.1063/1.3514236
Plain TextKoblmüller, G., Reurings, F., Tuomisto, F., Speck, J. S. (2010) Influence of Ga/N ratio on morphology, vacancies, and electrical transport in GaN grown by molecular beam epitaxy at high temperature. Applied Physics Letters, 97 (19). 191915pp. doi:10.1063/1.3514236
In(2010, November) Applied Physics Letters Vol. 97 (19) AIP Publishing

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Reurings, Floris, Tuomisto, Filip, Gallinat, Chad S., Koblmüller, Gregor, Speck, James S. (2010) In vacancies in InN grown by plasma-assisted molecular beam epitaxy. Applied Physics Letters, 97 (25). 251907pp. doi:10.1063/1.3516467
Koblmüller, G., Wu, F., Mates, T., Speck, J. S., Fernández-Garrido, S., Calleja, E. (2007) High electron mobility GaN grown under N-rich conditions by plasma-assisted molecular beam epitaxy. Applied Physics Letters, 91 (22). 221905pp. doi:10.1063/1.2817597
Law, J. J. M., Yu, E. T., Koblmüller, G., Wu, F., Speck, J. S. (2010) Low defect-mediated reverse-bias leakage in (0001) GaN via high-temperature molecular beam epitaxy. Applied Physics Letters, 96 (10). 102111pp. doi:10.1063/1.3360227
Koblmüller, G., Hirai, A., Wu, F., Gallinat, C. S., Metcalfe, G. D., Shen, H., Wraback, M., Speck, J. S. (2008) Molecular beam epitaxy and structural anisotropy of m-plane InN grown on free-standing GaN. Applied Physics Letters, 93 (17). 171902pp. doi:10.1063/1.3001806
Reurings, Floris, Tuomisto, Filip, Gallinat, Chad S., Koblmüller, Gregor, Speck, James S. (2009) Vacancy defects probed with positron annihilation spectroscopy in In-polar InN grown by plasma-assisted molecular beam epitaxy: Effects of growth conditions. physica status solidi (c), 6. doi:10.1002/pssc.200880952
Koblmüller, G., Brown, J., Averbeck, R., Riechert, H., Pongratz, P., Speck, J. S. (2005) Continuous evolution of Ga adlayer coverages during plasma-assisted molecular-beam epitaxy of (0001) GaN. Applied Physics Letters, 86 (4). 41908pp. doi:10.1063/1.1853530
Koblmüller, G., Gallinat, C. S., Speck, J. S. (2007) Surface kinetics and thermal instability of N-face InN grown by plasma-assisted molecular beam epitaxy. Journal of Applied Physics, 101 (8). 83516pp. doi:10.1063/1.2718884
Hierro, A., Arehart, A. R., Heying, B., Hansen, M., Mishra, U. K., DenBaars, S. P., Speck, J. S., Ringel, S. A. (2002) Impact of Ga/N flux ratio on trap states in n-GaN grown by plasma-assisted molecular-beam epitaxy. Applied Physics Letters, 80 (5). 805-807 doi:10.1063/1.1445274
Arehart, A. R., Homan, T., Wong, M. H., Poblenz, C., Speck, J. S., Ringel, S. A. (2010) Impact of N- and Ga-face polarity on the incorporation of deep levels in n-type GaN grown by molecular beam epitaxy. Applied Physics Letters, 96 (24). 242112pp. doi:10.1063/1.3453660
Rauch, C., Reurings, F., Tuomisto, F., Veal, T. D., McConville, C. F., Lu, H., Schaff, W. J., Gallinat, C. S., Koblmüller, G., Speck, J. S., Egger, W., Löwe, B., Ravelli, L., Sojak, S. (2010) In-vacancies in Si-doped InN. physica status solidi (a), 207 (5). 1083-1086 doi:10.1002/pssa.200983120
Pelli, A., Saarinen, K., Tuomisto, F., Ruffenach, S., Briot, O. (2006) Influence of V/III molar ratio on the formation of In vacancies in InN grown by metal-organic vapor-phase epitaxy. Applied Physics Letters, 89 (1). 11911pp. doi:10.1063/1.2219335
 
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