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Law, J. J. M., Yu, E. T., Koblmüller, G., Wu, F., Speck, J. S. (2010) Low defect-mediated reverse-bias leakage in (0001) GaN via high-temperature molecular beam epitaxy. Applied Physics Letters, 96 (10). 102111pp. doi:10.1063/1.3360227

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Reference TypeJournal (article/letter/editorial)
TitleLow defect-mediated reverse-bias leakage in (0001) GaN via high-temperature molecular beam epitaxy
JournalApplied Physics Letters
AuthorsLaw, J. J. M.Author
Yu, E. T.Author
Koblmüller, G.Author
Wu, F.Author
Speck, J. S.Author
Year2010 (March 8)Volume96
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.3360227Search in ResearchGate
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Mindat Ref. ID8581978Long-form Identifiermindat:1:5:8581978:2
GUID0
Full ReferenceLaw, J. J. M., Yu, E. T., Koblmüller, G., Wu, F., Speck, J. S. (2010) Low defect-mediated reverse-bias leakage in (0001) GaN via high-temperature molecular beam epitaxy. Applied Physics Letters, 96 (10). 102111pp. doi:10.1063/1.3360227
Plain TextLaw, J. J. M., Yu, E. T., Koblmüller, G., Wu, F., Speck, J. S. (2010) Low defect-mediated reverse-bias leakage in (0001) GaN via high-temperature molecular beam epitaxy. Applied Physics Letters, 96 (10). 102111pp. doi:10.1063/1.3360227
In(2010, March) Applied Physics Letters Vol. 96 (10) AIP Publishing

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Miller, E. J., Yu, E. T., Waltereit, P., Speck, J. S. (2004) Analysis of reverse-bias leakage current mechanisms in GaN grown by molecular-beam epitaxy. Applied Physics Letters, 84 (4). 535-537 doi:10.1063/1.1644029
Koblmüller, G., Wu, F., Mates, T., Speck, J. S., Fernández-Garrido, S., Calleja, E. (2007) High electron mobility GaN grown under N-rich conditions by plasma-assisted molecular beam epitaxy. Applied Physics Letters, 91 (22). 221905pp. doi:10.1063/1.2817597
Koblmüller, G., Reurings, F., Tuomisto, F., Speck, J. S. (2010) Influence of Ga/N ratio on morphology, vacancies, and electrical transport in GaN grown by molecular beam epitaxy at high temperature. Applied Physics Letters, 97 (19). 191915pp. doi:10.1063/1.3514236
Koblmüller, G., Fernández-Garrido, S., Calleja, E., Speck, J. S. (2007) In situ investigation of growth modes during plasma-assisted molecular beam epitaxy of (0001) GaN. Applied Physics Letters, 91 (16). 161904pp. doi:10.1063/1.2789691
Hsu, J. W. P., Manfra, M. J., Molnar, R. J., Heying, B., Speck, J. S. (2002) Direct imaging of reverse-bias leakage through pure screw dislocations in GaN films grown by molecular beam epitaxy on GaN templates. Applied Physics Letters, 81 (1). 79-81 doi:10.1063/1.1490147
Miller, E. J., Schaadt, D. M., Yu, E. T., Poblenz, C., Elsass, C., Speck, J. S. (2002) Reduction of reverse-bias leakage current in Schottky diodes on GaN grown by molecular-beam epitaxy using surface modification with an atomic force microscope. Journal of Applied Physics, 91 (12). 9821pp. doi:10.1063/1.1478793
Koblmüller, G., Brown, J., Averbeck, R., Riechert, H., Pongratz, P., Speck, J. S. (2005) Continuous evolution of Ga adlayer coverages during plasma-assisted molecular-beam epitaxy of (0001) GaN. Applied Physics Letters, 86 (4). 41908pp. doi:10.1063/1.1853530
Koblmüller, G., Metcalfe, G. D., Wraback, M., Wu, F., Gallinat, C. S., Speck, J. S. (2009) In adlayer mediated molecular beam epitaxial growth and properties of a-plane InN on freestanding GaN. Applied Physics Letters, 94 (9). 91905pp. doi:10.1063/1.3092482
Koblmüller, G., Hirai, A., Wu, F., Gallinat, C. S., Metcalfe, G. D., Shen, H., Wraback, M., Speck, J. S. (2008) Molecular beam epitaxy and structural anisotropy of m-plane InN grown on free-standing GaN. Applied Physics Letters, 93 (17). 171902pp. doi:10.1063/1.3001806
Miller, E. J., Schaadt, D. M., Yu, E. T., Waltereit, P., Poblenz, C., Speck, J. S. (2003) Reverse-bias leakage current reduction in GaN Schottky diodes by electrochemical surface treatment. Applied Physics Letters, 82 (8). 1293-1295 doi:10.1063/1.1554484
Koblmüller, G., Chu, R. M., Raman, A., Mishra, U. K., Speck, J. S. (2010) High-temperature molecular beam epitaxial growth of AlGaN/GaN on GaN templates with reduced interface impurity levels. Journal of Applied Physics, 107 (4). 43527pp. doi:10.1063/1.3285309
 
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