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Miller, E. J., Schaadt, D. M., Yu, E. T., Poblenz, C., Elsass, C., Speck, J. S. (2002) Reduction of reverse-bias leakage current in Schottky diodes on GaN grown by molecular-beam epitaxy using surface modification with an atomic force microscope. Journal of Applied Physics, 91 (12). 9821pp. doi:10.1063/1.1478793

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Reference TypeJournal (article/letter/editorial)
TitleReduction of reverse-bias leakage current in Schottky diodes on GaN grown by molecular-beam epitaxy using surface modification with an atomic force microscope
JournalJournal of Applied Physics
AuthorsMiller, E. J.Author
Schaadt, D. M.Author
Yu, E. T.Author
Poblenz, C.Author
Elsass, C.Author
Speck, J. S.Author
Year2002Volume91
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.1478793Search in ResearchGate
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Mindat Ref. ID5113067Long-form Identifiermindat:1:5:5113067:1
GUID0
Full ReferenceMiller, E. J., Schaadt, D. M., Yu, E. T., Poblenz, C., Elsass, C., Speck, J. S. (2002) Reduction of reverse-bias leakage current in Schottky diodes on GaN grown by molecular-beam epitaxy using surface modification with an atomic force microscope. Journal of Applied Physics, 91 (12). 9821pp. doi:10.1063/1.1478793
Plain TextMiller, E. J., Schaadt, D. M., Yu, E. T., Poblenz, C., Elsass, C., Speck, J. S. (2002) Reduction of reverse-bias leakage current in Schottky diodes on GaN grown by molecular-beam epitaxy using surface modification with an atomic force microscope. Journal of Applied Physics, 91 (12). 9821pp. doi:10.1063/1.1478793
In(2002) Journal of Applied Physics Vol. 91 (12) AIP Publishing

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Miller, E. J., Schaadt, D. M., Yu, E. T., Waltereit, P., Poblenz, C., Speck, J. S. (2003) Reverse-bias leakage current reduction in GaN Schottky diodes by electrochemical surface treatment. Applied Physics Letters, 82 (8). 1293-1295 doi:10.1063/1.1554484
Miller, E. J., Yu, E. T., Waltereit, P., Speck, J. S. (2004) Analysis of reverse-bias leakage current mechanisms in GaN grown by molecular-beam epitaxy. Applied Physics Letters, 84 (4). 535-537 doi:10.1063/1.1644029
Miller, E. J., Schaadt, D. M., Yu, E. T., Sun, X. L., Brillson, L. J., Waltereit, P., Speck, J. S. (2003) Origin and microscopic mechanism for suppression of leakage currents in Schottky contacts to GaN grown by molecular-beam epitaxy. Journal of Applied Physics, 94 (12). 7611pp. doi:10.1063/1.1627460
Miller, E. J., Yu, E. T., Poblenz, C., Elsass, C., Speck, J. S. (2002) Direct measurement of the polarization charge in AlGaN/GaN heterostructures using capacitance–voltage carrier profiling. Applied Physics Letters, 80 (19). 3551-3553 doi:10.1063/1.1477275
Arehart, A. R., Poblenz, C., Speck, J. S., Ringel, S. A. (2010) Effect of nitrogen plasma power on defect levels in Ni/n-GaN Schottky diodes grown by molecular beam epitaxy. Journal of Applied Physics, 107 (5). 54518pp. doi:10.1063/1.3309778
Zhang, H., Miller, E. J., Yu, E. T. (2006) Analysis of leakage current mechanisms in Schottky contacts to GaN and Al0.25Ga0.75N∕GaN grown by molecular-beam epitaxy. Journal of Applied Physics, 99 (2). 23703pp. doi:10.1063/1.2159547
Heying, B., Smorchkova, I., Poblenz, C., Elsass, C., Fini, P., Den Baars, S., Mishra, U., Speck, J. S. (2000) Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy. Applied Physics Letters, 77 (18). 2885-2887 doi:10.1063/1.1322370
Hsu, J. W. P., Manfra, M. J., Molnar, R. J., Heying, B., Speck, J. S. (2002) Direct imaging of reverse-bias leakage through pure screw dislocations in GaN films grown by molecular beam epitaxy on GaN templates. Applied Physics Letters, 81 (1). 79-81 doi:10.1063/1.1490147
Law, J. J. M., Yu, E. T., Koblmüller, G., Wu, F., Speck, J. S. (2010) Low defect-mediated reverse-bias leakage in (0001) GaN via high-temperature molecular beam epitaxy. Applied Physics Letters, 96 (10). 102111pp. doi:10.1063/1.3360227
Smith, K. V., Yu, E. T., Elsass, C. R., Heying, B., Speck, J. S. (2001) Localized variations in electronic structure of AlGaN/GaN heterostructures grown by molecular-beam epitaxy. Applied Physics Letters, 79 (17). 2749-2751 doi:10.1063/1.1410342
Simpkins, B. S., Schaadt, D. M., Yu, E. T., Molnar, R. J. (2002) Scanning Kelvin probe microscopy of surface electronic structure in GaN grown by hydride vapor phase epitaxy. Journal of Applied Physics, 91 (12). 9924pp. doi:10.1063/1.1481208
 
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