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Hsu, J. W. P., Manfra, M. J., Molnar, R. J., Heying, B., Speck, J. S. (2002) Direct imaging of reverse-bias leakage through pure screw dislocations in GaN films grown by molecular beam epitaxy on GaN templates. Applied Physics Letters, 81 (1). 79-81 doi:10.1063/1.1490147

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Reference TypeJournal (article/letter/editorial)
TitleDirect imaging of reverse-bias leakage through pure screw dislocations in GaN films grown by molecular beam epitaxy on GaN templates
JournalApplied Physics Letters
AuthorsHsu, J. W. P.Author
Manfra, M. J.Author
Molnar, R. J.Author
Heying, B.Author
Speck, J. S.Author
Year2002 (July)Volume81
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.1490147Search in ResearchGate
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Mindat Ref. ID8532871Long-form Identifiermindat:1:5:8532871:2
GUID0
Full ReferenceHsu, J. W. P., Manfra, M. J., Molnar, R. J., Heying, B., Speck, J. S. (2002) Direct imaging of reverse-bias leakage through pure screw dislocations in GaN films grown by molecular beam epitaxy on GaN templates. Applied Physics Letters, 81 (1). 79-81 doi:10.1063/1.1490147
Plain TextHsu, J. W. P., Manfra, M. J., Molnar, R. J., Heying, B., Speck, J. S. (2002) Direct imaging of reverse-bias leakage through pure screw dislocations in GaN films grown by molecular beam epitaxy on GaN templates. Applied Physics Letters, 81 (1). 79-81 doi:10.1063/1.1490147
In(2002, July) Applied Physics Letters Vol. 81 (1) AIP Publishing

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Hsu, J. W. P., Manfra, M. J., Chu, S. N. G., Chen, C. H., Pfeiffer, L. N., Molnar, R. J. (2001) Effect of growth stoichiometry on the electrical activity of screw dislocations in GaN films grown by molecular-beam epitaxy. Applied Physics Letters, 78 (25). 3980-3982 doi:10.1063/1.1379789
Manfra, M. J., Pfeiffer, L. N., West, K. W., Stormer, H. L., Baldwin, K. W., Hsu, J. W. P., Lang, D. V., Molnar, R. J. (2000) High-mobility AlGaN/GaN heterostructures grown by molecular-beam epitaxy on GaN templates prepared by hydride vapor phase epitaxy. Applied Physics Letters, 77 (18). 2888-2890 doi:10.1063/1.1323856
Miller, E. J., Yu, E. T., Waltereit, P., Speck, J. S. (2004) Analysis of reverse-bias leakage current mechanisms in GaN grown by molecular-beam epitaxy. Applied Physics Letters, 84 (4). 535-537 doi:10.1063/1.1644029
Manfra, M. J., Weimann, N. G., Hsu, J. W. P., Pfeiffer, L. N., West, K. W., Syed, S., Stormer, H. L., Pan, W., Lang, D. V., Chu, S. N. G., Kowach, G., Sergent, A. M., Caissie, J., Molvar, K. M., Mahoney, L. J., Molnar, R. J. (2002) High mobility AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy on semi-insulating GaN templates prepared by hydride vapor phase epitaxy. Journal of Applied Physics, 92 (1). 338-345 doi:10.1063/1.1484227
Hsu, J. W. P., Manfra, M. J., Lang, D. V., Richter, S., Chu, S. N. G., Sergent, A. M., Kleiman, R. N., Pfeiffer, L. N., Molnar, R. J. (2001) Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottky diodes. Applied Physics Letters, 78 (12). 1685-1687 doi:10.1063/1.1356450
Smith, K. V., Yu, E. T., Elsass, C. R., Heying, B., Speck, J. S. (2001) Localized variations in electronic structure of AlGaN/GaN heterostructures grown by molecular-beam epitaxy. Applied Physics Letters, 79 (17). 2749-2751 doi:10.1063/1.1410342
Law, J. J. M., Yu, E. T., Koblmüller, G., Wu, F., Speck, J. S. (2010) Low defect-mediated reverse-bias leakage in (0001) GaN via high-temperature molecular beam epitaxy. Applied Physics Letters, 96 (10). 102111pp. doi:10.1063/1.3360227
Manfra, M. J., Baldwin, K. W., Sergent, A. M., West, K. W., Molnar, R. J., Caissie, J. (2004) Electron mobility exceeding 160000cm2∕Vs in AlGaN∕GaN heterostructures grown by molecular-beam epitaxy. Applied Physics Letters, 85 (22). 5394-5396 doi:10.1063/1.1824176
Miller, E. J., Schaadt, D. M., Yu, E. T., Poblenz, C., Elsass, C., Speck, J. S. (2002) Reduction of reverse-bias leakage current in Schottky diodes on GaN grown by molecular-beam epitaxy using surface modification with an atomic force microscope. Journal of Applied Physics, 91 (12). 9821pp. doi:10.1063/1.1478793
Manfra, M. J., Weimann, N. G., Hsu, J. W. P., Pfeiffer, L. N., West, K. W., Chu, S. N. G. (2002) Dislocation and morphology control during molecular-beam epitaxy of AlGaN/GaN heterostructures directly on sapphire substrates. Applied Physics Letters, 81 (8). 1456-1458 doi:10.1063/1.1498867
Katona, T. M., Speck, J. S., DenBaars, S. P. (2002) Control of crystallographic tilt in GaN grown on Si (111) by cantilever epitaxy. Applied Physics Letters, 81 (19). 3558-3560 doi:10.1063/1.1519943
 
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