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Wang, Xiaohui, Chang, Benkang, Ren, Ling, Gao, Pin (2011) Influence of the p-type doping concentration on reflection-mode GaN photocathode. Applied Physics Letters, 98 (8). 82109pp. doi:10.1063/1.3556656

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Reference TypeJournal (article/letter/editorial)
TitleInfluence of the p-type doping concentration on reflection-mode GaN photocathode
JournalApplied Physics Letters
AuthorsWang, XiaohuiAuthor
Chang, BenkangAuthor
Ren, LingAuthor
Gao, PinAuthor
Year2011 (February 21)Volume98
Issue8
PublisherAIP Publishing
DOIdoi:10.1063/1.3556656Search in ResearchGate
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Mindat Ref. ID8595087Long-form Identifiermindat:1:5:8595087:6
GUID0
Full ReferenceWang, Xiaohui, Chang, Benkang, Ren, Ling, Gao, Pin (2011) Influence of the p-type doping concentration on reflection-mode GaN photocathode. Applied Physics Letters, 98 (8). 82109pp. doi:10.1063/1.3556656
Plain TextWang, Xiaohui, Chang, Benkang, Ren, Ling, Gao, Pin (2011) Influence of the p-type doping concentration on reflection-mode GaN photocathode. Applied Physics Letters, 98 (8). 82109pp. doi:10.1063/1.3556656
In(2011, February) Applied Physics Letters Vol. 98 (8) AIP Publishing

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Guo, Xiangyang, Wang, Xiaohui, Chang, BenKang, Zhang, Yijun, Gao, Pin (2011) Retraction: “High quantum efficiency of depth grade doping negative-electron-affinity GaN photocathode” [Appl. Phys. Lett. 97, 063104 (2010)]. Applied Physics Letters, 98 (2). 29901pp. doi:10.1063/1.3533377
Guo, Xiangyang, Wang, Xiaohui, Chang, Benkang, Zhang, Yijun, Gao, Pin (2010) High quantum efficiency of depth grade doping negative-electron-affinity GaN photocathode. Applied Physics Letters, 97 (6). 63104pp. doi:10.1063/1.3478010
Wang, Honggang, Qian, Yunsheng, Du, Yujie, Xu, Yuan, Lu, Liubing, Chang, Benkang (2014) Resolution characteristics for reflection-mode exponential-doping GaN photocathode. Applied Optics, 53. 335pp. doi:10.1364/ao.53.000335
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Lei, Liu, BenKang, Chang, YuJie, Du, YunSheng, Qian, Pin, Gao (2005) The variation of spectral response of transmission-type GaAs photocathode in the seal process. Applied Surface Science, 251. 273-277 doi:10.1016/j.apsusc.2005.03.219
Chen, Xihong, Lee, Seung Joon, Moskovits, Martin (2007) Modification of the electronic properties of GaN nanowires by Mn doping. Applied Physics Letters, 91 (8). 82109pp. doi:10.1063/1.2773747
Zhang, Yijun, Zou, Jijun, Niu, Jun, Zhao, Jing, Chang, Benkang (2011) Photoemission characteristics of different-structure reflection-mode GaAs photocathodes. Journal of Applied Physics, 110 (6). 63113pp. doi:10.1063/1.3642978
Wang, Xiao-Hui, Gao, Pin, Wang, Hong-Gang, Li, Biao, Chang, Ben-Kang (2013) Influence of wet chemical cleaning on quantum efficiency of GaN photocathode. Chinese Physics B, 22. 27901pp. doi:10.1088/1674-1056/22/2/027901
Hao, Guanghui, Yang, Mingzhu, Chang, Benkang, Chen, Xinlong, Zhang, Junju, Fu, Xiaoqian (2013) Attenuation performance of reflection-mode AlGaN photocathode under different preparation methods. Applied Optics, 52. 5671pp. doi:10.1364/ao.52.005671
Zhang, Yijun, Niu, Jun, Zhao, Jing, Zou, Jijun, Chang, Benkang, Shi, Feng, Cheng, Hongchang (2010) Influence of exponential-doping structure on photoemission capability of transmission-mode GaAs photocathodes. Journal of Applied Physics, 108 (9). 93108pp. doi:10.1063/1.3504193
 
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