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Kesaria, Manoj, Shivaprasad, S. M. (2011) Nitrogen flux induced GaN nanostructure nucleation at misfit dislocations on Al2O3(0001). Applied Physics Letters, 99 (14). 143105pp. doi:10.1063/1.3646391

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Reference TypeJournal (article/letter/editorial)
TitleNitrogen flux induced GaN nanostructure nucleation at misfit dislocations on Al2O3(0001)
JournalApplied Physics Letters
AuthorsKesaria, ManojAuthor
Shivaprasad, S. M.Author
Year2011 (October 3)Volume99
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.3646391Search in ResearchGate
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Mindat Ref. ID8596395Long-form Identifiermindat:1:5:8596395:9
GUID0
Full ReferenceKesaria, Manoj, Shivaprasad, S. M. (2011) Nitrogen flux induced GaN nanostructure nucleation at misfit dislocations on Al2O3(0001). Applied Physics Letters, 99 (14). 143105pp. doi:10.1063/1.3646391
Plain TextKesaria, Manoj, Shivaprasad, S. M. (2011) Nitrogen flux induced GaN nanostructure nucleation at misfit dislocations on Al2O3(0001). Applied Physics Letters, 99 (14). 143105pp. doi:10.1063/1.3646391
In(2011, October) Applied Physics Letters Vol. 99 (14) AIP Publishing

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Kumar, Praveen, Tuteja, Mohit, Kesaria, Manoj, Waghmare, U. V., Shivaprasad, S. M. (2012) Superstructure of self-aligned hexagonal GaN nanorods formed on nitrided Si(111) surface. Applied Physics Letters, 101 (13). 131605pp. doi:10.1063/1.4751986
Bhasker, H. P., Dhar, S., Sain, A., Kesaria, Manoj, Shivaprasad, S. M. (2012) High electron mobility through the edge states in random networks of c-axis oriented wedge-shaped GaN nanowalls grown by molecular beam epitaxy. Applied Physics Letters, 101 (13). 132109pp. doi:10.1063/1.4755775
Kesaria, Manoj, Shetty, Satish, Shivaprasad, S.M. (2011) Spontaneous formation of GaN nanostructures by molecular beam epitaxy. Journal of Crystal Growth, 326 (1). 191-194 doi:10.1016/j.jcrysgro.2011.01.095
Kuyyalil, Jithesh, Tangi, Malleswararao, Shivaprasad, S. M. (2011) Dependence of crystal orientation and bandgap on substrate temperature of molecular-beam epitaxy grown InN on bare Al2O3 (0001). Journal of Applied Physics, 109 (9). 93513pp. doi:10.1063/1.3580254
Kesaria, Manoj, Kumar, Mahesh, Govind, , Shivaprasad, S.M. (2009) Effect of Pb adatom flux rate on adlayer coverage for Stranski–Krastanov growth mode on Si(111)7×7 surface. Applied Surface Science, 256. 576-579 doi:10.1016/j.apsusc.2009.08.064
Kang, Junyong, Ogawa, Tomoya (1997) Misfit dislocations and stresses in GaN epilayers. Applied Physics Letters, 71 (16). 2304-2306 doi:10.1063/1.120056
Kumar, Praveen, Kuyyalil, Jithesh, Shivaprasad, S. M. (2010) Ga induced superstructures as templates for lattice matched hetroepitaxial growth of GaN on Si(111) substrate. Applied Physics Letters, 97 (22). 221913pp. doi:10.1063/1.3522830
Kaiser, S., Preis, Herbert, Ambacher, Oliver, Gebhardt, W. (1997) Characterization of the Relaxation by Misfit Dislocations Confined at the Interface of GaN/Al2O3(0001) Studied by TEM. Materials Science Forum, 258. 1755-1760 doi:10.4028/www.scientific.net/msf.258-263.1755
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Kaganer, Vladimir M., Sabelfeld, Karl K., Brandt, Oliver (2018) Piezoelectric field, exciton lifetime, and cathodoluminescence intensity at threading dislocations in GaN{0001}. Applied Physics Letters, 112 (12). 122101pp. doi:10.1063/1.5022170
Korytov, M., Benaissa, M., Brault, J., Huault, T., Neisius, T., Vennéguès, P. (2009) Effects of capping on GaN quantum dots deposited on Al0.5Ga0.5N by molecular beam epitaxy. Applied Physics Letters, 94 (14). 143105pp. doi:10.1063/1.3115027
 
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