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Kuyyalil, Jithesh, Tangi, Malleswararao, Shivaprasad, S. M. (2011) Dependence of crystal orientation and bandgap on substrate temperature of molecular-beam epitaxy grown InN on bare Al2O3 (0001). Journal of Applied Physics, 109 (9). 93513pp. doi:10.1063/1.3580254

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Reference TypeJournal (article/letter/editorial)
TitleDependence of crystal orientation and bandgap on substrate temperature of molecular-beam epitaxy grown InN on bare Al2O3 (0001)
JournalJournal of Applied Physics
AuthorsKuyyalil, JitheshAuthor
Tangi, MalleswararaoAuthor
Shivaprasad, S. M.Author
Year2011 (May)Volume109
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.3580254Search in ResearchGate
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Mindat Ref. ID5183122Long-form Identifiermindat:1:5:5183122:0
GUID0
Full ReferenceKuyyalil, Jithesh, Tangi, Malleswararao, Shivaprasad, S. M. (2011) Dependence of crystal orientation and bandgap on substrate temperature of molecular-beam epitaxy grown InN on bare Al2O3 (0001). Journal of Applied Physics, 109 (9). 93513pp. doi:10.1063/1.3580254
Plain TextKuyyalil, Jithesh, Tangi, Malleswararao, Shivaprasad, S. M. (2011) Dependence of crystal orientation and bandgap on substrate temperature of molecular-beam epitaxy grown InN on bare Al2O3 (0001). Journal of Applied Physics, 109 (9). 93513pp. doi:10.1063/1.3580254
In(2011, May) Journal of Applied Physics Vol. 109 (9) AIP Publishing

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Tangi, Malleswararao, Kuyyalil, Jithesh, Shivaprasad, S. M. (2013) Optical bandgap and near surface band bending in degenerate InN films grown by molecular beam epitaxy. Journal of Applied Physics, 114 (15). 153501pp. doi:10.1063/1.4824823
Tangi, Malleswararao, Kuyyalil, Jithesh, Shivaprasad, S. M. (2012) Role of native defects in nitrogen flux dependent carrier concentration of InN films grown by molecular beam epitaxy. Journal of Applied Physics, 112 (7). 73510pp. doi:10.1063/1.4757031
Kuyyalil, Jithesh, Tangi, Malleswararao, Shivaprasad, S. M. (2012) Effect of interfacial lattice mismatch on bulk carrier concentration and band gap of InN. Journal of Applied Physics, 112 (8). 83521pp. doi:10.1063/1.4759449
Tangi, Malleswararao, De, Arpan, Shivaprasad, S. M. (2018) Role of dislocations and carrier concentration in limiting the electron mobility of InN films grown by plasma assisted molecular beam epitaxy. Journal of Applied Physics, 123 (1). 15701pp. doi:10.1063/1.5008903
De, Arpan, Tangi, Malleswararao, Shivaprasad, S. M. (2015) Pre-nitridation induced In incorporation in InxGa1−xN nanorods on Si(111) grown by molecular beam epitaxy. Journal of Applied Physics, 118 (2). 25301pp. doi:10.1063/1.4926413
Tangi, Malleswararao, De, Arpan, Ghatak, Jay, Shivaprasad, S. M. (2016) Electron mobility of self-assembled and dislocation free InN nanorods grown on GaN nano wall network template. Journal of Applied Physics, 119 (20). 205701pp. doi:10.1063/1.4952380
Kumar, Praveen, Kuyyalil, Jithesh, Shivaprasad, S. M. (2010) Ga induced superstructures as templates for lattice matched hetroepitaxial growth of GaN on Si(111) substrate. Applied Physics Letters, 97 (22). 221913pp. doi:10.1063/1.3522830
Cheng, T. M., Chang, C. Y., Huang, J. H. (1995) Substrate orientation dependence of low‐temperature GaAs grown by molecular beam epitaxy. Applied Physics Letters, 66 (1). 55-57 doi:10.1063/1.114181
Tangi, Malleswararao, De, Arpan, Shivaprasad, S. M. (2013) Lowering of growth temperature of epitaxial InN by superlattice matched intermediate layers. physica status solidi (a), 210 (11). 2409-2415 doi:10.1002/pssa.201329345
Tangi, Malleswararao, Mishra, Pawan, Janjua, Bilal, Ng, Tien Khee, Anjum, Dalaver H., Prabaswara, Aditya, Yang, Yang, Albadri, Abdulrahman M., Alyamani, Ahmed Y., El-Desouki, Munir M., Ooi, Boon S. (2016) Bandgap measurements and the peculiar splitting of E2H phonon modes of InxAl1-xN nanowires grown by plasma assisted molecular beam epitaxy. Journal of Applied Physics, 120 (4). 45701pp. doi:10.1063/1.4959260
McAfee, S. R., Tsang, W. T., Lang, D. V. (1981) The effect of substrate growth temperature on deep levels inn‐AlxGa1−xAs grown by molecular beam epitaxy. Journal of Applied Physics, 52 (10). 6165-6167 doi:10.1063/1.328516
 
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