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De, Arpan, Tangi, Malleswararao, Shivaprasad, S. M. (2015) Pre-nitridation induced In incorporation in InxGa1−xN nanorods on Si(111) grown by molecular beam epitaxy. Journal of Applied Physics, 118 (2). 25301pp. doi:10.1063/1.4926413

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Reference TypeJournal (article/letter/editorial)
TitlePre-nitridation induced In incorporation in InxGa1−xN nanorods on Si(111) grown by molecular beam epitaxy
JournalJournal of Applied Physics
AuthorsDe, ArpanAuthor
Tangi, MalleswararaoAuthor
Shivaprasad, S. M.Author
Year2015 (July 14)Volume118
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.4926413Search in ResearchGate
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Mindat Ref. ID5203114Long-form Identifiermindat:1:5:5203114:6
GUID0
Full ReferenceDe, Arpan, Tangi, Malleswararao, Shivaprasad, S. M. (2015) Pre-nitridation induced In incorporation in InxGa1−xN nanorods on Si(111) grown by molecular beam epitaxy. Journal of Applied Physics, 118 (2). 25301pp. doi:10.1063/1.4926413
Plain TextDe, Arpan, Tangi, Malleswararao, Shivaprasad, S. M. (2015) Pre-nitridation induced In incorporation in InxGa1−xN nanorods on Si(111) grown by molecular beam epitaxy. Journal of Applied Physics, 118 (2). 25301pp. doi:10.1063/1.4926413
In(2015, July) Journal of Applied Physics Vol. 118 (2) AIP Publishing

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Tangi, Malleswararao, De, Arpan, Shivaprasad, S. M. (2018) Role of dislocations and carrier concentration in limiting the electron mobility of InN films grown by plasma assisted molecular beam epitaxy. Journal of Applied Physics, 123 (1). 15701pp. doi:10.1063/1.5008903
Tangi, Malleswararao, Kuyyalil, Jithesh, Shivaprasad, S. M. (2013) Optical bandgap and near surface band bending in degenerate InN films grown by molecular beam epitaxy. Journal of Applied Physics, 114 (15). 153501pp. doi:10.1063/1.4824823
Tangi, Malleswararao, De, Arpan, Ghatak, Jay, Shivaprasad, S. M. (2016) Electron mobility of self-assembled and dislocation free InN nanorods grown on GaN nano wall network template. Journal of Applied Physics, 119 (20). 205701pp. doi:10.1063/1.4952380
Tangi, Malleswararao, Kuyyalil, Jithesh, Shivaprasad, S. M. (2012) Role of native defects in nitrogen flux dependent carrier concentration of InN films grown by molecular beam epitaxy. Journal of Applied Physics, 112 (7). 73510pp. doi:10.1063/1.4757031
Kuyyalil, Jithesh, Tangi, Malleswararao, Shivaprasad, S. M. (2011) Dependence of crystal orientation and bandgap on substrate temperature of molecular-beam epitaxy grown InN on bare Al2O3 (0001). Journal of Applied Physics, 109 (9). 93513pp. doi:10.1063/1.3580254
Doppalapudi, D., Basu, S. N., Moustakas, T. D. (1999) Domain structure in chemically ordered InxGa1−xN alloys grown by molecular beam epitaxy. Journal of Applied Physics, 85 (2). 883-886 doi:10.1063/1.369250
Ekenstedt, M. J., Songpongs, P., Andersson, T. G. (1992) Electron mobility and Si incorporation in InxGa1−xAs layers grown on GaAs by molecular beam epitaxy. Applied Physics Letters, 61 (7). 789-791 doi:10.1063/1.107799
Tangi, Malleswararao, De, Arpan, Shivaprasad, S. M. (2013) Lowering of growth temperature of epitaxial InN by superlattice matched intermediate layers. physica status solidi (a), 210 (11). 2409-2415 doi:10.1002/pssa.201329345
Grandjean, N., Massies, J., Leroux, M., De Mierry, P. (1998) Band edge versus deep luminescence of InxGa1−xN layers grown by molecular beam epitaxy. Applied Physics Letters, 72 (24). 3190-3192 doi:10.1063/1.121589
Tangi, Malleswararao, Mishra, Pawan, Janjua, Bilal, Ng, Tien Khee, Anjum, Dalaver H., Prabaswara, Aditya, Yang, Yang, Albadri, Abdulrahman M., Alyamani, Ahmed Y., El-Desouki, Munir M., Ooi, Boon S. (2016) Bandgap measurements and the peculiar splitting of E2H phonon modes of InxAl1-xN nanowires grown by plasma assisted molecular beam epitaxy. Journal of Applied Physics, 120 (4). 45701pp. doi:10.1063/1.4959260
Kuyyalil, Jithesh, Tangi, Malleswararao, Shivaprasad, S. M. (2012) Effect of interfacial lattice mismatch on bulk carrier concentration and band gap of InN. Journal of Applied Physics, 112 (8). 83521pp. doi:10.1063/1.4759449
 
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