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Tangi, Malleswararao, De, Arpan, Shivaprasad, S. M. (2018) Role of dislocations and carrier concentration in limiting the electron mobility of InN films grown by plasma assisted molecular beam epitaxy. Journal of Applied Physics, 123 (1). 15701pp. doi:10.1063/1.5008903

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Reference TypeJournal (article/letter/editorial)
TitleRole of dislocations and carrier concentration in limiting the electron mobility of InN films grown by plasma assisted molecular beam epitaxy
JournalJournal of Applied Physics
AuthorsTangi, MalleswararaoAuthor
De, ArpanAuthor
Shivaprasad, S. M.Author
Year2018 (January 7)Volume123
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.5008903Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5208504Long-form Identifiermindat:1:5:5208504:0
GUID0
Full ReferenceTangi, Malleswararao, De, Arpan, Shivaprasad, S. M. (2018) Role of dislocations and carrier concentration in limiting the electron mobility of InN films grown by plasma assisted molecular beam epitaxy. Journal of Applied Physics, 123 (1). 15701pp. doi:10.1063/1.5008903
Plain TextTangi, Malleswararao, De, Arpan, Shivaprasad, S. M. (2018) Role of dislocations and carrier concentration in limiting the electron mobility of InN films grown by plasma assisted molecular beam epitaxy. Journal of Applied Physics, 123 (1). 15701pp. doi:10.1063/1.5008903
In(2018, January) Journal of Applied Physics Vol. 123 (1) AIP Publishing

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Tangi, Malleswararao, Kuyyalil, Jithesh, Shivaprasad, S. M. (2012) Role of native defects in nitrogen flux dependent carrier concentration of InN films grown by molecular beam epitaxy. Journal of Applied Physics, 112 (7). 73510pp. doi:10.1063/1.4757031
Tangi, Malleswararao, Kuyyalil, Jithesh, Shivaprasad, S. M. (2013) Optical bandgap and near surface band bending in degenerate InN films grown by molecular beam epitaxy. Journal of Applied Physics, 114 (15). 153501pp. doi:10.1063/1.4824823
De, Arpan, Tangi, Malleswararao, Shivaprasad, S. M. (2015) Pre-nitridation induced In incorporation in InxGa1−xN nanorods on Si(111) grown by molecular beam epitaxy. Journal of Applied Physics, 118 (2). 25301pp. doi:10.1063/1.4926413
Tangi, Malleswararao, De, Arpan, Ghatak, Jay, Shivaprasad, S. M. (2016) Electron mobility of self-assembled and dislocation free InN nanorods grown on GaN nano wall network template. Journal of Applied Physics, 119 (20). 205701pp. doi:10.1063/1.4952380
Kuyyalil, Jithesh, Tangi, Malleswararao, Shivaprasad, S. M. (2011) Dependence of crystal orientation and bandgap on substrate temperature of molecular-beam epitaxy grown InN on bare Al2O3 (0001). Journal of Applied Physics, 109 (9). 93513pp. doi:10.1063/1.3580254
Kuyyalil, Jithesh, Tangi, Malleswararao, Shivaprasad, S. M. (2012) Effect of interfacial lattice mismatch on bulk carrier concentration and band gap of InN. Journal of Applied Physics, 112 (8). 83521pp. doi:10.1063/1.4759449
Tangi, Malleswararao, De, Arpan, Shivaprasad, S. M. (2013) Lowering of growth temperature of epitaxial InN by superlattice matched intermediate layers. physica status solidi (a), 210 (11). 2409-2415 doi:10.1002/pssa.201329345
Miyashita, Naoya, Shimizu, Yukiko, Okada, Yoshitaka (2007) Carrier mobility characteristics in GaInNAs dilute nitride films grown by atomic hydrogen-assisted molecular beam epitaxy. Journal of Applied Physics, 102 (4). 44904pp. doi:10.1063/1.2770833
Tangi, Malleswararao, Mishra, Pawan, Janjua, Bilal, Ng, Tien Khee, Anjum, Dalaver H., Prabaswara, Aditya, Yang, Yang, Albadri, Abdulrahman M., Alyamani, Ahmed Y., El-Desouki, Munir M., Ooi, Boon S. (2016) Bandgap measurements and the peculiar splitting of E2H phonon modes of InxAl1-xN nanowires grown by plasma assisted molecular beam epitaxy. Journal of Applied Physics, 120 (4). 45701pp. doi:10.1063/1.4959260
Koblmüller, G., Gallinat, C. S., Speck, J. S. (2007) Surface kinetics and thermal instability of N-face InN grown by plasma-assisted molecular beam epitaxy. Journal of Applied Physics, 101 (8). 83516pp. doi:10.1063/1.2718884
Reurings, Floris, Tuomisto, Filip, Gallinat, Chad S., Koblmüller, Gregor, Speck, James S. (2010) In vacancies in InN grown by plasma-assisted molecular beam epitaxy. Applied Physics Letters, 97 (25). 251907pp. doi:10.1063/1.3516467
 
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