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Fujikura, Hajime, Konno, Taichiro (2018) Roughening of GaN homoepitaxial surfaces due to step meandering and bunching instabilities and their suppression in hydride vapor phase epitaxy. Applied Physics Letters, 113 (15). 152101pp. doi:10.1063/1.5042572

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Reference TypeJournal (article/letter/editorial)
TitleRoughening of GaN homoepitaxial surfaces due to step meandering and bunching instabilities and their suppression in hydride vapor phase epitaxy
JournalApplied Physics Letters
AuthorsFujikura, HajimeAuthor
Konno, TaichiroAuthor
Year2018 (October 8)Volume113
Issue15
PublisherAIP Publishing
DOIdoi:10.1063/1.5042572Search in ResearchGate
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Mindat Ref. ID8654041Long-form Identifiermindat:1:5:8654041:8
GUID0
Full ReferenceFujikura, Hajime, Konno, Taichiro (2018) Roughening of GaN homoepitaxial surfaces due to step meandering and bunching instabilities and their suppression in hydride vapor phase epitaxy. Applied Physics Letters, 113 (15). 152101pp. doi:10.1063/1.5042572
Plain TextFujikura, Hajime, Konno, Taichiro (2018) Roughening of GaN homoepitaxial surfaces due to step meandering and bunching instabilities and their suppression in hydride vapor phase epitaxy. Applied Physics Letters, 113 (15). 152101pp. doi:10.1063/1.5042572
In(2018, October) Applied Physics Letters Vol. 113 (15) AIP Publishing

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Kimura, Takeshi, Konno, Taichiro, Fujikura, Hajime (2021) Substantial and simultaneous reduction of major electron traps and residual carbon in homoepitaxial GaN layers. Applied Physics Letters, 118 (18) 182104pp. doi:10.1063/5.0051692
Fujikura, Hajime, Konno, Taichiro, Kimura, Takeshi, Narita, Yoshinobu, Horikiri, Fumimasa (2020) Homo-epitaxial growth of n-GaN layers free from carbon-induced mobility collapse and off-angle-dependent doping variation by quartz-free hydride vapor phase epitaxy. Applied Physics Letters, 117 (1) 12103pp. doi:10.1063/5.0014528
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Fujikura, Hajime, Konno, Taichiro, Yoshida, Takehiro, Horikiri, Fumimasa (2017) Hydride-vapor-phase epitaxial growth of highly pure GaN layers with smooth as-grown surfaces on freestanding GaN substrates. Japanese Journal of Applied Physics, 56 (8) 85503 doi:10.7567/jjap.56.085503
Kaneki, Shota, Konno, Taichiro, Kimura, Takeshi, Kanegae, Kazutaka, Suda, Jun, Fujikura, Hajime (2024) Record high electron mobilities in high-purity GaN by eliminating C-induced mobility collapse. Applied Physics Letters, 124 (1) doi:10.1063/5.0178086
Shinohara, Masanori, Inoue, Naohisa (1995) Behavior and mechanism of step bunching during metalorganic vapor phase epitaxy of GaAs. Applied Physics Letters, 66 (15). 1936-1938 doi:10.1063/1.113282
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Tsuchiya, Harutoshi, Okahisa, Takuji, Hasegawa, Fumio, Okumura, Hajime, Yoshida, Sadafumi (1994) Homoepitaxial Growth of Cubic GaN by Hydride Vapor Phase Epitaxy on Cubic GaN/GaAs Substrates Prepared with Gas Source Molecular Beam Epitaxy. Japanese Journal of Applied Physics, 33. 1747-1752 doi:10.1143/jjap.33.1747
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