Kanegae, Kazutaka, Fujikura, Hajime, Otoki, Yohei, Konno, Taichiro, Yoshida, Takehiro, Horita, Masahiro, Kimoto, Tsunenobu, Suda, Jun (2019) Deep-level transient spectroscopy studies of electron and hole traps in n-type GaN homoepitaxial layers grown by quartz-free hydride-vapor-phase epitaxy. Applied Physics Letters, 115 (1). 12103pp. doi:10.1063/1.5098965
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Deep-level transient spectroscopy studies of electron and hole traps in n-type GaN homoepitaxial layers grown by quartz-free hydride-vapor-phase epitaxy | ||
Journal | Applied Physics Letters | ||
Authors | Kanegae, Kazutaka | Author | |
Fujikura, Hajime | Author | ||
Otoki, Yohei | Author | ||
Konno, Taichiro | Author | ||
Yoshida, Takehiro | Author | ||
Horita, Masahiro | Author | ||
Kimoto, Tsunenobu | Author | ||
Suda, Jun | Author | ||
Year | 2019 (July) | Volume | 115 |
Issue | 1 | ||
Publisher | AIP Publishing | ||
DOI | doi:10.1063/1.5098965Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 8657961 | Long-form Identifier | mindat:1:5:8657961:4 |
GUID | 0 | ||
Full Reference | Kanegae, Kazutaka, Fujikura, Hajime, Otoki, Yohei, Konno, Taichiro, Yoshida, Takehiro, Horita, Masahiro, Kimoto, Tsunenobu, Suda, Jun (2019) Deep-level transient spectroscopy studies of electron and hole traps in n-type GaN homoepitaxial layers grown by quartz-free hydride-vapor-phase epitaxy. Applied Physics Letters, 115 (1). 12103pp. doi:10.1063/1.5098965 | ||
Plain Text | Kanegae, Kazutaka, Fujikura, Hajime, Otoki, Yohei, Konno, Taichiro, Yoshida, Takehiro, Horita, Masahiro, Kimoto, Tsunenobu, Suda, Jun (2019) Deep-level transient spectroscopy studies of electron and hole traps in n-type GaN homoepitaxial layers grown by quartz-free hydride-vapor-phase epitaxy. Applied Physics Letters, 115 (1). 12103pp. doi:10.1063/1.5098965 | ||
In | (2019, July) Applied Physics Letters Vol. 115 (1) AIP Publishing |
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