Reference Type | Journal (article/letter/editorial) |
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Title | INVESTIGATION ON OXIDE GROWTH MECHANISM OF PECVD SILICON CARBIDE FILMS |
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Journal | International Journal of Modern Physics B |
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Authors | CHOI, W. K. | Author |
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LEOY, C. C. | Author |
LEE, L. P. | Author |
Year | 2002 (March 20) | Volume | 16 |
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Issue | 6 |
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Publisher | World Scientific Pub Co Pte Lt |
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DOI | doi:10.1142/s0217979202010865Search in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 8904785 | Long-form Identifier | mindat:1:5:8904785:1 |
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GUID | 0 |
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Full Reference | CHOI, W. K., LEOY, C. C., LEE, L. P. (2002) INVESTIGATION ON OXIDE GROWTH MECHANISM OF PECVD SILICON CARBIDE FILMS. International Journal of Modern Physics B, 16 (6). 1062-1066 doi:10.1142/s0217979202010865 |
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Plain Text | CHOI, W. K., LEOY, C. C., LEE, L. P. (2002) INVESTIGATION ON OXIDE GROWTH MECHANISM OF PECVD SILICON CARBIDE FILMS. International Journal of Modern Physics B, 16 (6). 1062-1066 doi:10.1142/s0217979202010865 |
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In | (2002, March) International Journal of Modern Physics B Vol. 16 (6) World Scientific Pub Co Pte Lt |
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