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Karimov, M., Makhkamov, Sh., Tursunov, N. A., Makhmudov, Sh. A., Begmatov, K. A., Karakhodzhaev, A. K., Sadikov, A. Kh. (2009) Relaxation kinetics of photoconductivity in р-silicon compensated by phosphorus atoms. Russian Physics Journal, 52 (5). 448-451 doi:10.1007/s11182-009-9253-0

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Reference TypeJournal (article/letter/editorial)
TitleRelaxation kinetics of photoconductivity in р-silicon compensated by phosphorus atoms
JournalRussian Physics Journal
AuthorsKarimov, M.Author
Makhkamov, Sh.Author
Tursunov, N. A.Author
Makhmudov, Sh. A.Author
Begmatov, K. A.Author
Karakhodzhaev, A. K.Author
Sadikov, A. Kh.Author
Year2009 (May)Volume52
Issue5
PublisherSpringer Science and Business Media LLC
DOIdoi:10.1007/s11182-009-9253-0Search in ResearchGate
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Mindat Ref. ID9035146Long-form Identifiermindat:1:5:9035146:8
GUID0
Full ReferenceKarimov, M., Makhkamov, Sh., Tursunov, N. A., Makhmudov, Sh. A., Begmatov, K. A., Karakhodzhaev, A. K., Sadikov, A. Kh. (2009) Relaxation kinetics of photoconductivity in р-silicon compensated by phosphorus atoms. Russian Physics Journal, 52 (5). 448-451 doi:10.1007/s11182-009-9253-0
Plain TextKarimov, M., Makhkamov, Sh., Tursunov, N. A., Makhmudov, Sh. A., Begmatov, K. A., Karakhodzhaev, A. K., Sadikov, A. Kh. (2009) Relaxation kinetics of photoconductivity in р-silicon compensated by phosphorus atoms. Russian Physics Journal, 52 (5). 448-451 doi:10.1007/s11182-009-9253-0
In(2009, May) Russian Physics Journal Vol. 52 (5) Springer Science and Business Media LLC

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