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Karimov, M., Makhkamov, Sh., Tursunov, N. A., Makhmudov, Sh. A., Sulaimonov, A. A. (2011) The effect of fast neutrons on the electrophysical properties of nuclear-doped p-silicon. Russian Physics Journal, 54 (5). 589-593 doi:10.1007/s11182-011-9656-6

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Reference TypeJournal (article/letter/editorial)
TitleThe effect of fast neutrons on the electrophysical properties of nuclear-doped p-silicon
JournalRussian Physics Journal
AuthorsKarimov, M.Author
Makhkamov, Sh.Author
Tursunov, N. A.Author
Makhmudov, Sh. A.Author
Sulaimonov, A. A.Author
Year2011 (October)Volume54
Issue5
PublisherSpringer Science and Business Media LLC
DOIdoi:10.1007/s11182-011-9656-6Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID9035585Long-form Identifiermindat:1:5:9035585:3
GUID0
Full ReferenceKarimov, M., Makhkamov, Sh., Tursunov, N. A., Makhmudov, Sh. A., Sulaimonov, A. A. (2011) The effect of fast neutrons on the electrophysical properties of nuclear-doped p-silicon. Russian Physics Journal, 54 (5). 589-593 doi:10.1007/s11182-011-9656-6
Plain TextKarimov, M., Makhkamov, Sh., Tursunov, N. A., Makhmudov, Sh. A., Sulaimonov, A. A. (2011) The effect of fast neutrons on the electrophysical properties of nuclear-doped p-silicon. Russian Physics Journal, 54 (5). 589-593 doi:10.1007/s11182-011-9656-6
In(2011, October) Russian Physics Journal Vol. 54 (5) Springer Science and Business Media LLC

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Karimov, M., Makhkamov, Sh., Tursunov, N. A., Makhmudov, Sh. A., Begmatov, K. A., Karakhodzhaev, A. K., Sadikov, A. Kh. (2009) Relaxation kinetics of photoconductivity in р-silicon compensated by phosphorus atoms. Russian Physics Journal, 52 (5). 448-451 doi:10.1007/s11182-009-9253-0
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