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Budnitskii, D. L., Koretskaya, O. B., Тоlbanov, О. P., Tyazhev, А. V. (2010) Photoelectrical characteristics of as-grown highresistance GaAs single crystals. Russian Physics Journal, 53 (1). 44-48 doi:10.1007/s11182-010-9385-2

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Reference TypeJournal (article/letter/editorial)
TitlePhotoelectrical characteristics of as-grown highresistance GaAs single crystals
JournalRussian Physics Journal
AuthorsBudnitskii, D. L.Author
Koretskaya, O. B.Author
Тоlbanov, О. P.Author
Tyazhev, А. V.Author
Year2010 (June)Volume53
Issue1
PublisherSpringer Science and Business Media LLC
DOIdoi:10.1007/s11182-010-9385-2Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID9035237Long-form Identifiermindat:1:5:9035237:9
GUID0
Full ReferenceBudnitskii, D. L., Koretskaya, O. B., Тоlbanov, О. P., Tyazhev, А. V. (2010) Photoelectrical characteristics of as-grown highresistance GaAs single crystals. Russian Physics Journal, 53 (1). 44-48 doi:10.1007/s11182-010-9385-2
Plain TextBudnitskii, D. L., Koretskaya, O. B., Тоlbanov, О. P., Tyazhev, А. V. (2010) Photoelectrical characteristics of as-grown highresistance GaAs single crystals. Russian Physics Journal, 53 (1). 44-48 doi:10.1007/s11182-010-9385-2
In(2010, June) Russian Physics Journal Vol. 53 (1) Springer Science and Business Media LLC

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Budnitskii, D. L., Novikov, V. A., Prudaev, I. A., Тоlbanov, О. P., Yaskevich, Т. М. (2012) A photovoltaic effect in the metal–high-resistive GaAs:Cr contact. Russian Physics Journal, 55 (7). 748-751 doi:10.1007/s11182-012-9876-4
Kalygina, V. M., Vishnikina, V. V., Zarubin, А. N., Petrova, Yu. S., Skakunov, М. S., Тоlbanov, О. P., Тyazhev, А. V., Yaskevich, Т. М. (2014) The influence of anodic oxide on the electron concentration in n-GaAs. Russian Physics Journal, 56 (9). 984-989 doi:10.1007/s11182-014-0129-6
Ayzenshtat, G. I., Budnitskii, D. L., Mokeev, D. Yu., Novikov, V. A., Syresin, E. M., Tolbanov, O. P., Tyazhev, A. V., Shelkov, G. A. (2008) Gamma-ray detectors based on GaAs for nanostructural investigations. Russian Physics Journal, 51 (10). 1037-1052 doi:10.1007/s11182-009-9141-7
Emel’yanov, Е. А., Kokhanenko, А. P., Abramkin, D. S., Pchelyakov, O. P., Putyato, М. А., Semyagin, B. R., Preobrazhenskii, V. V., Vasilenko, A. P., Feklin, D. F., Niu, Zhicuan, Ni, Haiqiao (2014) InGaAs/GaAs Quantum Wells Grown by MBE on Artificial GaAs/Si(001) Substrates. Russian Physics Journal, 57 (3). 359-363 doi:10.1007/s11182-014-0247-1
Budnitskii, D. L., Koretskaya, O. B., Koretskii, A. V., Tolbanov, O. P., Khludkov, S. S. (1995) Gallium arsenide structures sensitive to ultraviolet radiation. Russian Physics Journal, 38 (8). 859-862 doi:10.1007/bf00559292
Khludkov, S. S., Prudaev, I. A., Тоlbanov, О. P. (2013) Gallium nitride as a material for spintronics. Russian Physics Journal, 55 (8). 903-909 doi:10.1007/s11182-013-9899-5
Budnitskii, D. L., Gossen, A. I., Koretskaya, O. B., Khludkov, S. S. (1998) Conductivity of high-resistance π layers and parameters of iron-doped GaAs diode structures. Russian Physics Journal, 41 (4). 357-360 doi:10.1007/bf02766535
Budnitskii, D. L., Novikov, V. A., Tolbanov, O. P., Prudaev, I. A. (2008) Charge-carrier lifetimes in high-resistance GaAs doped by chromium diffusion. Russian Physics Journal, 51 (5). 531-535 doi:10.1007/s11182-008-9071-9
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