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Voitsekhovskii, A. V., Nesmelov, S. N., Dzyadukh, S. M., Varavin, V. S., Dvoretskii, S. A., Mikhailov, N. N., Sidorov, Yu. G., Vasil’ev, V. V., Yakushev, M. V. (2010) Electrophysical characteristics of MIS structures based on graded band-gap MBE HgCdTe with grown in situ CdTe as a dielectric. Russian Physics Journal, 53 (2). 148-154 doi:10.1007/s11182-010-9399-9

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Reference TypeJournal (article/letter/editorial)
TitleElectrophysical characteristics of MIS structures based on graded band-gap MBE HgCdTe with grown in situ CdTe as a dielectric
JournalRussian Physics Journal
AuthorsVoitsekhovskii, A. V.Author
Nesmelov, S. N.Author
Dzyadukh, S. M.Author
Varavin, V. S.Author
Dvoretskii, S. A.Author
Mikhailov, N. N.Author
Sidorov, Yu. G.Author
Vasil’ev, V. V.Author
Yakushev, M. V.Author
Year2010 (July)Volume53
Issue2
PublisherSpringer Science and Business Media LLC
DOIdoi:10.1007/s11182-010-9399-9Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID9035306Long-form Identifiermindat:1:5:9035306:8
GUID0
Full ReferenceVoitsekhovskii, A. V., Nesmelov, S. N., Dzyadukh, S. M., Varavin, V. S., Dvoretskii, S. A., Mikhailov, N. N., Sidorov, Yu. G., Vasil’ev, V. V., Yakushev, M. V. (2010) Electrophysical characteristics of MIS structures based on graded band-gap MBE HgCdTe with grown in situ CdTe as a dielectric. Russian Physics Journal, 53 (2). 148-154 doi:10.1007/s11182-010-9399-9
Plain TextVoitsekhovskii, A. V., Nesmelov, S. N., Dzyadukh, S. M., Varavin, V. S., Dvoretskii, S. A., Mikhailov, N. N., Sidorov, Yu. G., Vasil’ev, V. V., Yakushev, M. V. (2010) Electrophysical characteristics of MIS structures based on graded band-gap MBE HgCdTe with grown in situ CdTe as a dielectric. Russian Physics Journal, 53 (2). 148-154 doi:10.1007/s11182-010-9399-9
In(2010, July) Russian Physics Journal Vol. 53 (2) Springer Science and Business Media LLC

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Dzyadukh, S. M., Voitsekhovskii, A. V., Nesmelov, S. N., Sidorov, G. Yu., Varavin, V. S., Vasil’ev, V. V., Dvoretsky, S. A., Mikhailov, N. N., Yakushev, M. V. (2018) Admittance of MIS-Structures Based on HgCdTe with a Double-Layer CdTe/Al2O3 Insulator. Russian Physics Journal, 60 (11). 1853-1863 doi:10.1007/s11182-018-1294-9
Voitsekhovskii, A. V., Nesmelov, S. N., Dzyadukh, S. M., Varavin, V. S., Dvoretskii, S. A., Mikhailov, N. N., Sidorov, Yu. G., Vasil’ev, V. V., Zakhar’yash, T. I., Mashukov, Yu. P. (2006) Photoelectrical characteristics of MIS structures on the basis of graded-band-gap n-HgCdTe (x = 0.21–0.23). Russian Physics Journal, 49 (10). 1117-1128 doi:10.1007/s11182-006-0232-4
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Voitsekhovskii, A. V., Nesmelov, S. N., Kokhanenko, A. P., Mashukov, Yu. P., Zakhar’yash, T. I., Vasil’ev, V. V., Varavin, V. S., Sidorov, Yu. G., Dvoretskii, S. A., Mikhailov, N. N. (2005) Photoelectrical Characteristics of MIS Structures on the Basis of Heteroepitaxial HgCdTe. Russian Physics Journal, 48 (2). 143-147 doi:10.1007/s11182-005-0097-y
Voitsekhovskii, A. V., Nesmelov, S. N., Dzyadukh, S. M., Varavin, V. S., Vasil’ev, V. V., Dvoretskii, S. A., Mikhailov, N. N., Yakushev, M. V., Sidorov, G. Yu. (2017) Temperature Dependences of the Product of the Differential Resistance by the Area in MIS-Structures Based on Cd x Hg1–x Te Grown by Molecularbeam Epitaxy on Alternative Si and GaAs Substrates. Russian Physics Journal, 60 (2). 360-370 doi:10.1007/s11182-017-1083-x
Voitsekhovskii, A. V., Nesmelov, S. N., Dzyadukh, S. M., Varavin, V. S., Dvoretskii, S. A., Mikhailov, N. N., Sidorov, Yu. G. (2011) The electrical characteristics of MBE n-Hg1–x Cd x Te (x = 0.29–0.31) MIS structures with sharp inhomogeneities in composition. Russian Physics Journal, 54 (3). 263-270 doi:10.1007/s11182-011-9609-0
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