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Voitsekhovskii, A. V., Nesmelov, S. N., Dzyadukh, S. M., Varavin, V. S., Dvoretskii, S. A., Mikhailov, N. N., Sidorov, Yu. G. (2011) The electrical characteristics of MBE n-Hg1–x Cd x Te (x = 0.29–0.31) MIS structures with sharp inhomogeneities in composition. Russian Physics Journal, 54 (3). 263-270 doi:10.1007/s11182-011-9609-0

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Reference TypeJournal (article/letter/editorial)
TitleThe electrical characteristics of MBE n-Hg1–x Cd x Te (x = 0.29–0.31) MIS structures with sharp inhomogeneities in composition
JournalRussian Physics Journal
AuthorsVoitsekhovskii, A. V.Author
Nesmelov, S. N.Author
Dzyadukh, S. M.Author
Varavin, V. S.Author
Dvoretskii, S. A.Author
Mikhailov, N. N.Author
Sidorov, Yu. G.Author
Year2011 (August)Volume54
Issue3
PublisherSpringer Science and Business Media LLC
DOIdoi:10.1007/s11182-011-9609-0Search in ResearchGate
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Mindat Ref. ID9035535Long-form Identifiermindat:1:5:9035535:8
GUID0
Full ReferenceVoitsekhovskii, A. V., Nesmelov, S. N., Dzyadukh, S. M., Varavin, V. S., Dvoretskii, S. A., Mikhailov, N. N., Sidorov, Yu. G. (2011) The electrical characteristics of MBE n-Hg1–x Cd x Te (x = 0.29–0.31) MIS structures with sharp inhomogeneities in composition. Russian Physics Journal, 54 (3). 263-270 doi:10.1007/s11182-011-9609-0
Plain TextVoitsekhovskii, A. V., Nesmelov, S. N., Dzyadukh, S. M., Varavin, V. S., Dvoretskii, S. A., Mikhailov, N. N., Sidorov, Yu. G. (2011) The electrical characteristics of MBE n-Hg1–x Cd x Te (x = 0.29–0.31) MIS structures with sharp inhomogeneities in composition. Russian Physics Journal, 54 (3). 263-270 doi:10.1007/s11182-011-9609-0
In(2011, August) Russian Physics Journal Vol. 54 (3) Springer Science and Business Media LLC

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Voitsekhovskii, A. V., Nesmelov, S. N., Dzyadukh, S. М., Vasil’ev, V. V., Varavin, V. S., Dvoretskii, S. A., Мikhailov, N. N., Kuz’min, V. D., Remesnik, V. G. (2014) Special Features of Admittance in Mis Structures Based on Graded-Gap MBE n-Hg1–x Cd x Te (x = 0.31–0.32) in a Temperature Range OF 8–300 K. Russian Physics Journal, 57 (5). 633-641 doi:10.1007/s11182-014-0286-7
Voitsekhovskii, A. V., Nesmelov, S. N., Dzyadukh, S. M., Vasil’ev, V. V., Varavin, V. S., Dvoretskii, S. A., Mikhailov, N. N., Sidorov, Yu. G., Yakushev, M. V. (2013) The photoelectrical properties of MIS structures based on heteroepitaxial n-Hg1–xCdxTe (x = 0.21–0.23). Russian Physics Journal, 55 (8). 917-924 doi:10.1007/s11182-013-9901-2
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Voitsekhovskii, A. V., Nesmelov, S. N., Dzyadukh, S. М., Vasil’ev, V. V., Varavin, V. S., Dvoretskii, S. A., Мikhailov, N. N., Kuz’min, V. D., Remesnik, V. G. (2014) Differential Resistance of Space Charge Region in MIS Structures Based on Graded-Gap MBE n-Hg1–x Cd x Te (x = 0.23) in a Wide Temperature Range. Russian Physics Journal, 57 (4). 536-544 doi:10.1007/s11182-014-0272-0
Voitsekhovskii, A. V., Nesmelov, S. N., Dzyadukh, S. M., Varavin, V. S., Dvoretskii, S. A., Mikhailov, N. N., Sidorov, Yu. G., Vasil’ev, V. V., Yakushev, M. V. (2010) Electrophysical characteristics of MIS structures based on graded band-gap MBE HgCdTe with grown in situ CdTe as a dielectric. Russian Physics Journal, 53 (2). 148-154 doi:10.1007/s11182-010-9399-9
Voitsekhovskii, A. V., Nesmelov, S. N., Dzyadukh, S. M., Varavin, V. S., Dvoretskii, S. A., Mikhailov, N. N., Sidorov, Yu. G., Vasil’ev, V. V., Zakhar’yash, T. I., Mashukov, Yu. P. (2006) Photoelectrical characteristics of MIS structures on the basis of graded-band-gap n-HgCdTe (x = 0.21–0.23). Russian Physics Journal, 49 (10). 1117-1128 doi:10.1007/s11182-006-0232-4
Voitsekhovskii, A. V., Nesmelov, S. N., Dzyadukh, S. М., Vasil’ev, V. V., Varavin, V. S., Dvoretskii, S. A., Мikhailov, N. N., Kuz’min, V. D., Remesnik, V. G. (2014) Total Conductance of MIS Structures Based on Graded-Gap p-Hg1–х Cd х Te (x =0.22–0.23) Grown by Molecular Beam Epitaxy. Russian Physics Journal, 57 (6). 707-716 doi:10.1007/s11182-014-0294-7
Dzyadukh, S. M., Voitsekhovskii, A. V., Nesmelov, S. N., Sidorov, G. Yu., Varavin, V. S., Vasil’ev, V. V., Dvoretsky, S. A., Mikhailov, N. N., Yakushev, M. V. (2018) Admittance of MIS-Structures Based on HgCdTe with a Double-Layer CdTe/Al2O3 Insulator. Russian Physics Journal, 60 (11). 1853-1863 doi:10.1007/s11182-018-1294-9
Voitsekhovskii, A. V., Nesmelov, S. N., Dzyadukh, S. М. (2014) Admittance in MIS Structures Based on Graded-GAP MBE p-Hg1–х Cd х Te (x = 0.22–0.23) in the Strong Inversion Mode. Russian Physics Journal, 57 (8). 1070-1081 doi:10.1007/s11182-014-0345-0
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