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Brudnyi, V. N., Grinyaev, S. N. (2010) Genesis of hole states of small germanium clusters in silicon. Russian Physics Journal, 53 (5). 508-514 doi:10.1007/s11182-010-9450-x

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Reference TypeJournal (article/letter/editorial)
TitleGenesis of hole states of small germanium clusters in silicon
JournalRussian Physics Journal
AuthorsBrudnyi, V. N.Author
Grinyaev, S. N.Author
Year2010 (October)Volume53
Issue5
PublisherSpringer Science and Business Media LLC
DOIdoi:10.1007/s11182-010-9450-xSearch in ResearchGate
Generate Citation Formats
Mindat Ref. ID9035360Long-form Identifiermindat:1:5:9035360:6
GUID0
Full ReferenceBrudnyi, V. N., Grinyaev, S. N. (2010) Genesis of hole states of small germanium clusters in silicon. Russian Physics Journal, 53 (5). 508-514 doi:10.1007/s11182-010-9450-x
Plain TextBrudnyi, V. N., Grinyaev, S. N. (2010) Genesis of hole states of small germanium clusters in silicon. Russian Physics Journal, 53 (5). 508-514 doi:10.1007/s11182-010-9450-x
In(2010, October) Russian Physics Journal Vol. 53 (5) Springer Science and Business Media LLC

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Brudnyi, V. N., Grinyaev, S. N. (2010) Optical absorption spectra of Si with Ge quantum dots. Russian Physics Journal, 53 (7). 703-705 doi:10.1007/s11182-010-9476-0
Brudnyi, V. N., Grinyaev, S. N. (2004) Silicon Germanium Nanostructures: Electronic Parameters and Optical Characteristics. Russian Physics Journal, 47 (6). 577-582 doi:10.1023/b:rupj.0000047837.88697.c2
Brudnyi, V. N., Grinyaev, S. N., Kolin, N. G. (2006) The charge neutrality level in w-AlxGa1−x N solid solutions. Russian Physics Journal, 49 (8). 874-877 doi:10.1007/s11182-006-0189-3
Brudnyi, V. N., Grinyaev, S. N., Kolin, N. G. (2007) Correlation between energy positions of deep intrinsic point-defect levels and a limiting fermi level in irradiated III–V semiconductors. Russian Physics Journal, 50 (5). 429-434 doi:10.1007/s11182-007-0062-z
Filippov, V. V., Vlasov, A. N. (2010) Modeling of electronic properties of silicon nanoparticles with dense atomic packing. Russian Physics Journal, 53 (1). 77-82 doi:10.1007/s11182-010-9390-5
Brudnyi, V. N., Grinyaev, S. N., Kolin, N. G. (2003) The Fermi Level Pinning in Semiconductors (Interphase Boundaries, Clusters, and Radiation Modification). Russian Physics Journal, 46 (6). 594-600 doi:10.1023/b:rupj.0000008185.60287.2e
Maksimenko, N. V., Kuchin, S. M. (2010) Static polarizability of mesons in a quark model. Russian Physics Journal, 53 (5). 544-547 doi:10.1007/s11182-010-9457-3
Karavaev, G. F., Grinyaev, S. N. (2010) A study of the GaAs/AlAs(001) superlattice spectrum within the abrupt- and smooth-boundary models. Russian Physics Journal, 53 (1). 49-59 doi:10.1007/s11182-010-9386-1
Brudnyi, V. N., Verevkin, S. S., Kolin, N. G., Korulin, A. V. (2012) Electrical properties of electron-irradiated epitaxial n-GaN films. Russian Physics Journal, 55 (1). 53-57 doi:10.1007/s11182-012-9775-8
Titov, K. S., Brudnyi, V. N. (2014) Structure Defects in a Triple Semiconducting Compound ZnGeP2. Russian Physics Journal, 57 (1). 50-54 doi:10.1007/s11182-014-0206-x
Brudnyi, V. N., Voevodina, O. V., Voevodin, V. G., Grinyaev, S. N., Ivonin, I. V., Karavaev, G. F., Lavrent'eva, L. G. (1998) Physics of complex semiconductor crystals and their structure. Russian Physics Journal, 41 (8). 754-767 doi:10.1007/bf02510640
 
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