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Bargieł, Kamil, Zarębski, Janusz, Bisewski, Damian (2016) SPICE-aided modeling of high-voltage silicon carbide JFETs. IOP Conference Series: Materials Science and Engineering, 104. 12014pp. doi:10.1088/1757-899x/104/1/012014

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Reference TypeJournal (article/letter/editorial)
TitleSPICE-aided modeling of high-voltage silicon carbide JFETs
JournalIOP Conference Series: Materials Science and Engineering
AuthorsBargieł, KamilAuthor
Zarębski, JanuszAuthor
Bisewski, DamianAuthor
Year2016 (January 21)Volume104
PublisherIOP Publishing
DOIdoi:10.1088/1757-899x/104/1/012014Search in ResearchGate
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Mindat Ref. ID9780160Long-form Identifiermindat:1:5:9780160:7
GUID0
Full ReferenceBargieł, Kamil, Zarębski, Janusz, Bisewski, Damian (2016) SPICE-aided modeling of high-voltage silicon carbide JFETs. IOP Conference Series: Materials Science and Engineering, 104. 12014pp. doi:10.1088/1757-899x/104/1/012014
Plain TextBargieł, Kamil, Zarębski, Janusz, Bisewski, Damian (2016) SPICE-aided modeling of high-voltage silicon carbide JFETs. IOP Conference Series: Materials Science and Engineering, 104. 12014pp. doi:10.1088/1757-899x/104/1/012014
In(n.d.) IOP Conference Series: Materials Science and Engineering Vol. 104. IOP Publishing

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