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Patrzyk, Joanna, Zarębski, Janusz, Bisewski, Damian (2016) DC characteristics and parameters of silicon carbide high-voltage power BJTs. IOP Conference Series: Materials Science and Engineering, 104. 12015pp. doi:10.1088/1757-899x/104/1/012015

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Reference TypeJournal (article/letter/editorial)
TitleDC characteristics and parameters of silicon carbide high-voltage power BJTs
JournalIOP Conference Series: Materials Science and Engineering
AuthorsPatrzyk, JoannaAuthor
Zarębski, JanuszAuthor
Bisewski, DamianAuthor
Year2016 (January 21)Volume104
PublisherIOP Publishing
DOIdoi:10.1088/1757-899x/104/1/012015Search in ResearchGate
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Mindat Ref. ID9780161Long-form Identifiermindat:1:5:9780161:6
GUID0
Full ReferencePatrzyk, Joanna, Zarębski, Janusz, Bisewski, Damian (2016) DC characteristics and parameters of silicon carbide high-voltage power BJTs. IOP Conference Series: Materials Science and Engineering, 104. 12015pp. doi:10.1088/1757-899x/104/1/012015
Plain TextPatrzyk, Joanna, Zarębski, Janusz, Bisewski, Damian (2016) DC characteristics and parameters of silicon carbide high-voltage power BJTs. IOP Conference Series: Materials Science and Engineering, 104. 12015pp. doi:10.1088/1757-899x/104/1/012015
In(n.d.) IOP Conference Series: Materials Science and Engineering Vol. 104. IOP Publishing

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