Vote for your favorite mineral in #MinCup25! - Pectolite vs. Haüyne
It's a pair of striking blue beauties as #pectolite the uncrushable faces off against #hauyne, the phoenix from volcanic ashes!
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Fukuda, Kenji, Suzuki, Seiji, Senzaki, Junji, Kosugi, Ryouji, Nagai, Kiyoko, Sekigawa, Toshihiro, Okushi, Hideyo, Yoshida, Sadafumi, Tanaka, Tomoyuki, Arai, Kazuo (2000) Effect of Off-Angle from Si (0001) Surface and Polytype on Surface Morphology of SiC and C-V Characteristics of SiC MOS Structures. Materials Science Forum, 338. 1283-1286 doi:10.4028/www.scientific.net/msf.338-342.1283

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleEffect of Off-Angle from Si (0001) Surface and Polytype on Surface Morphology of SiC and C-V Characteristics of SiC MOS Structures
JournalMaterials Science Forum
AuthorsFukuda, KenjiAuthor
Suzuki, SeijiAuthor
Senzaki, JunjiAuthor
Kosugi, RyoujiAuthor
Nagai, KiyokoAuthor
Sekigawa, ToshihiroAuthor
Okushi, HideyoAuthor
Yoshida, SadafumiAuthor
Tanaka, TomoyukiAuthor
Arai, KazuoAuthor
Year2000 (May)Volume338
PublisherTrans Tech Publications, Ltd.
DOIdoi:10.4028/www.scientific.net/msf.338-342.1283Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID9849644Long-form Identifiermindat:1:5:9849644:8
GUID0
Full ReferenceFukuda, Kenji, Suzuki, Seiji, Senzaki, Junji, Kosugi, Ryouji, Nagai, Kiyoko, Sekigawa, Toshihiro, Okushi, Hideyo, Yoshida, Sadafumi, Tanaka, Tomoyuki, Arai, Kazuo (2000) Effect of Off-Angle from Si (0001) Surface and Polytype on Surface Morphology of SiC and C-V Characteristics of SiC MOS Structures. Materials Science Forum, 338. 1283-1286 doi:10.4028/www.scientific.net/msf.338-342.1283
Plain TextFukuda, Kenji, Suzuki, Seiji, Senzaki, Junji, Kosugi, Ryouji, Nagai, Kiyoko, Sekigawa, Toshihiro, Okushi, Hideyo, Yoshida, Sadafumi, Tanaka, Tomoyuki, Arai, Kazuo (2000) Effect of Off-Angle from Si (0001) Surface and Polytype on Surface Morphology of SiC and C-V Characteristics of SiC MOS Structures. Materials Science Forum, 338. 1283-1286 doi:10.4028/www.scientific.net/msf.338-342.1283
In(2000) Materials Science Forum Vol. 338. Trans Tech Publications, Ltd.

See Also

These are possibly similar items as determined by title/reference text matching only.

Suzuki, Seiji, Fukuda, Kenji, Okushi, Hideyo, Nagai, Kiyoko, Sekigawa, Toshihiro, Yoshida, Sadafumi, Tanaka, Tomoyuki, Arai, Kazuo (2000) Effect of Post-oxidation-annealing in Hydrogen on SiO2/4H-SiC Interface. Materials Science Forum, 338. 1073-1076 doi:10.4028/www.scientific.net/msf.338-342.1073
Senzaki, Junji, Fukuda, Kenji, Imai, Seiji, Tanaka, Yasunori, Kobayashi, Naoto, Tanoue, Hisao, Okushi, Hideyo, Arai, Kazuo (2000) Electrical Characteristics and Surface Morphology for Arsenic Ion-Implanted 4H-SiC at High Temperature. Materials Science Forum, 338. 865-868 doi:10.4028/www.scientific.net/msf.338-342.865
Fukuda, Kenji, Suzuki, Seiji, Senzaki, Junji, Kosugi, Ryouji, Tanaka, Tomoyuki, Arai, Kazuo (2001) Observation of SiO2/SiC Interface with Different Off-Angle from Si(0001) Face Using Transmission Electron Microscopy. Materials Science Forum, 353. 647-650 doi:10.4028/www.scientific.net/msf.353-356.647
Fukuda, Kenji, Suzuki, Seiji, Senzaki, Junji, Cho, W.J., Tanaka, Tomoyuki, Arai, Kazuo (2001) Interface Properties of MOS Structures Formed on 4H-SiC C(000-1) Face. Materials Science Forum, 353. 631-634 doi:10.4028/www.scientific.net/msf.353-356.631
Imai, Seiji, Kobayashi, Setsuko, Shinohe, Takashi, Fukuda, Kenji, Tanaka, Yasunori, Senzaki, Junji, Tanoue, Hisao, Kobayashi, Naoto, Okushi, Hideyo (2000) Hot-Implantation of Phosphorus Ions into 4H-SiC. Materials Science Forum, 338. 861-864 doi:10.4028/www.scientific.net/msf.338-342.861
Harada, Shinsuke, Suzuki, Seiji, Senzaki, Junji, Kosugi, Ryouji, Adachi, Kazuhiro, Fukuda, Kenji, Arai, Kazuo (2002) Improved Channel Mobility in Normally-Off 4H-SiC MOSFETs with Buried Channel Structure. Materials Science Forum, 389. 1069-1072 doi:10.4028/www.scientific.net/msf.389-393.1069
Fukuda, Kenji, Senzaki, Junji, Kushibe, Mitsuhiro, Kojima, Kazutoshi, Kosugi, Ryouji, Suzuki, Seiji, Harada, Shinsuke, Suzuki, Takaya, Tanaka, Tomoyuki, Arai, Kazuo (2002) A Large Reduction in Interface-State Density for MOS Capacitor on 4H-SiC (11-2 0) Face Using H2 and H2O Vapor Atmosphere Post-Oxidation Annealing. Materials Science Forum, 389. 1057-1060 doi:10.4028/www.scientific.net/msf.389-393.1057
Kosugi, Ryouji, Okamoto, Mitsuo, Suzuki, Seiji, Senzaki, Junji, Harada, Shinsuke, Fukuda, Kenji, Arai, Kazuo (2002) Influence of the Wet Re-Oxidation Procedure on Inversion Mobility of 4H-SiC MOSFETs. Materials Science Forum, 389. 1049-1052 doi:10.4028/www.scientific.net/msf.389-393.1049
Hatakeyama, Tetsuo, Harada, Shinsuke, Suzuki, Seiji, Senzaki, Junji, Kosugi, Ryouji, Fukuda, Kenji, Shinohe, Takashi, Arai, Kazuo (2002) Channel Engineering of Buried-Channel 4H-SiC MOSFET Based on the Mobility Model of the Oxide/4H-SiC Interface. Materials Science Forum, 389. 1081-1084 doi:10.4028/www.scientific.net/msf.389-393.1081
Senzaki, Junji, Harada, Shinsuke, Kosugi, Ryouji, Suzuki, Seiji, Fukuda, Kenji, Arai, Kazuo (2002) Improvements in Electrical Properties of n-Type-Implanted 4H-SiC Substrates Using High-Temperature Rapid Thermal Annealing. Materials Science Forum, 389. 795-798 doi:10.4028/www.scientific.net/msf.389-393.795
Senzaki, Junji, Fukuda, Kenji, Kojima, Kazutoshi, Harada, Shinsuke, Kosugi, Ryouji, Suzuki, Seiji, Suzuki, Takaya, Arai, Kazuo (2002) Significant Improvement of Inversion Channel Mobility in 4H-SiC MOSFET on (11-20) Face Using Hydrogen Post-Oxidation Annealing. Materials Science Forum, 389. 1061-1064 doi:10.4028/www.scientific.net/msf.389-393.1061
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 17, 2025 07:13:05
Go to top of page