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Senzaki, Junji, Fukuda, Kenji, Kojima, Kazutoshi, Harada, Shinsuke, Kosugi, Ryouji, Suzuki, Seiji, Suzuki, Takaya, Arai, Kazuo (2002) Significant Improvement of Inversion Channel Mobility in 4H-SiC MOSFET on (11-20) Face Using Hydrogen Post-Oxidation Annealing. Materials Science Forum, 389. 1061-1064 doi:10.4028/www.scientific.net/msf.389-393.1061

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Reference TypeJournal (article/letter/editorial)
TitleSignificant Improvement of Inversion Channel Mobility in 4H-SiC MOSFET on (11-20) Face Using Hydrogen Post-Oxidation Annealing
JournalMaterials Science Forum
AuthorsSenzaki, JunjiAuthor
Fukuda, KenjiAuthor
Kojima, KazutoshiAuthor
Harada, ShinsukeAuthor
Kosugi, RyoujiAuthor
Suzuki, SeijiAuthor
Suzuki, TakayaAuthor
Arai, KazuoAuthor
Year2002 (April)Volume389
PublisherTrans Tech Publications, Ltd.
DOIdoi:10.4028/www.scientific.net/msf.389-393.1061Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID9851644Long-form Identifiermindat:1:5:9851644:1
GUID0
Full ReferenceSenzaki, Junji, Fukuda, Kenji, Kojima, Kazutoshi, Harada, Shinsuke, Kosugi, Ryouji, Suzuki, Seiji, Suzuki, Takaya, Arai, Kazuo (2002) Significant Improvement of Inversion Channel Mobility in 4H-SiC MOSFET on (11-20) Face Using Hydrogen Post-Oxidation Annealing. Materials Science Forum, 389. 1061-1064 doi:10.4028/www.scientific.net/msf.389-393.1061
Plain TextSenzaki, Junji, Fukuda, Kenji, Kojima, Kazutoshi, Harada, Shinsuke, Kosugi, Ryouji, Suzuki, Seiji, Suzuki, Takaya, Arai, Kazuo (2002) Significant Improvement of Inversion Channel Mobility in 4H-SiC MOSFET on (11-20) Face Using Hydrogen Post-Oxidation Annealing. Materials Science Forum, 389. 1061-1064 doi:10.4028/www.scientific.net/msf.389-393.1061
In(2002) Materials Science Forum Vol. 389. Trans Tech Publications, Ltd.

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Fukuda, Kenji, Senzaki, Junji, Kushibe, Mitsuhiro, Kojima, Kazutoshi, Kosugi, Ryouji, Suzuki, Seiji, Harada, Shinsuke, Suzuki, Takaya, Tanaka, Tomoyuki, Arai, Kazuo (2002) A Large Reduction in Interface-State Density for MOS Capacitor on 4H-SiC (11-2 0) Face Using H2 and H2O Vapor Atmosphere Post-Oxidation Annealing. Materials Science Forum, 389. 1057-1060 doi:10.4028/www.scientific.net/msf.389-393.1057
Kosugi, Ryouji, Okamoto, Mitsuo, Suzuki, Seiji, Senzaki, Junji, Harada, Shinsuke, Fukuda, Kenji, Arai, Kazuo (2002) Influence of the Wet Re-Oxidation Procedure on Inversion Mobility of 4H-SiC MOSFETs. Materials Science Forum, 389. 1049-1052 doi:10.4028/www.scientific.net/msf.389-393.1049
Hatakeyama, Tetsuo, Harada, Shinsuke, Suzuki, Seiji, Senzaki, Junji, Kosugi, Ryouji, Fukuda, Kenji, Shinohe, Takashi, Arai, Kazuo (2002) Channel Engineering of Buried-Channel 4H-SiC MOSFET Based on the Mobility Model of the Oxide/4H-SiC Interface. Materials Science Forum, 389. 1081-1084 doi:10.4028/www.scientific.net/msf.389-393.1081
Harada, Shinsuke, Suzuki, Seiji, Senzaki, Junji, Kosugi, Ryouji, Adachi, Kazuhiro, Fukuda, Kenji, Arai, Kazuo (2002) Improved Channel Mobility in Normally-Off 4H-SiC MOSFETs with Buried Channel Structure. Materials Science Forum, 389. 1069-1072 doi:10.4028/www.scientific.net/msf.389-393.1069
Senzaki, Junji, Harada, Shinsuke, Kosugi, Ryouji, Suzuki, Seiji, Fukuda, Kenji, Arai, Kazuo (2002) Improvements in Electrical Properties of n-Type-Implanted 4H-SiC Substrates Using High-Temperature Rapid Thermal Annealing. Materials Science Forum, 389. 795-798 doi:10.4028/www.scientific.net/msf.389-393.795
Fukuda, Kenji, Senzaki, Junji, Kojima, Kazutoshi, Suzuki, Takaya (2003) High Inversion Channel Mobility of MOSFET Fabricated on 4H-SiC C(000-1) Face Using H2 Post-Oxidation Annealing. Materials Science Forum, 433. 567-570 doi:10.4028/www.scientific.net/msf.433-436.567
Suzuki, Seiji, Harada, Shinsuke, Kosugi, Ryouji, Senzaki, Junji, Fukuda, Kenji (2002) Correlation between Inversion Channel Mobility and Interface Traps near the Conduction Band in SiC MOSFETs. Materials Science Forum, 389. 1045-1048 doi:10.4028/www.scientific.net/msf.389-393.1045
Kojima, Kazutoshi, Ohno, Toshiyuki, Suzuki, Seiji, Senzaki, Junji, Harada, Shinsuke, Fukuda, Kenji, Kushibe, Mitsuhiro, Masahara, Koh, Ishida, Yuuki, Yoshida, Sadafumi, Takahashi, Tetsuo, Suzuki, Takaya, Tanaka, Tomoyuki, Arai, Kazuo (2002) Influence of the Crystalline Quality of Epitaxial Layers on Inversion Channel Mobility in 4H-SiC MOSFETs. Materials Science Forum, 389. 1053-1056 doi:10.4028/www.scientific.net/msf.389-393.1053
Suzuki, Seiji, Harada, Shinsuke, Yatsuo, Tsutomu, Kosugi, Ryouji, Senzaki, Junji, Fukuda, Kenji (2003) 4H-SiC Lateral RESURF MOSFET with a Buried Channel Structure. Materials Science Forum, 433. 753-756 doi:10.4028/www.scientific.net/msf.433-436.753
Senzaki, Junji, Kojima, Kazutoshi, Suzuki, Takaya, Fukuda, Kenji (2003) Effective Normal Field Dependence of Inversion Channel Mobility in 4H-SiC MOSFETs on the (11-20) Face. Materials Science Forum, 433. 613-616 doi:10.4028/www.scientific.net/msf.433-436.613
Senzaki, Junji, Kojima, Kazutoshi, Harada, Shinsuke, Kosugi, Ryoji, Suzuki, Seiji, Suzuki, Takaya, Fukuda, Kenji (2001) Effects of Pyrogenic Reoxidation Annealing on Inversion Channel Mobility of 4H-SiC Metal-Oxide-Semiconductor Field-Effect Transistor Fabricated on $(11\bar{2}0)$ Face. Japanese Journal of Applied Physics, 40. doi:10.1143/jjap.40.l1201
 
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