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Suzuki, Seiji, Harada, Shinsuke, Kosugi, Ryouji, Senzaki, Junji, Fukuda, Kenji (2002) Correlation between Inversion Channel Mobility and Interface Traps near the Conduction Band in SiC MOSFETs. Materials Science Forum, 389. 1045-1048 doi:10.4028/www.scientific.net/msf.389-393.1045

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Reference TypeJournal (article/letter/editorial)
TitleCorrelation between Inversion Channel Mobility and Interface Traps near the Conduction Band in SiC MOSFETs
JournalMaterials Science Forum
AuthorsSuzuki, SeijiAuthor
Harada, ShinsukeAuthor
Kosugi, RyoujiAuthor
Senzaki, JunjiAuthor
Fukuda, KenjiAuthor
Year2002 (April)Volume389
PublisherTrans Tech Publications, Ltd.
DOIdoi:10.4028/www.scientific.net/msf.389-393.1045Search in ResearchGate
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Mindat Ref. ID9851640Long-form Identifiermindat:1:5:9851640:5
GUID0
Full ReferenceSuzuki, Seiji, Harada, Shinsuke, Kosugi, Ryouji, Senzaki, Junji, Fukuda, Kenji (2002) Correlation between Inversion Channel Mobility and Interface Traps near the Conduction Band in SiC MOSFETs. Materials Science Forum, 389. 1045-1048 doi:10.4028/www.scientific.net/msf.389-393.1045
Plain TextSuzuki, Seiji, Harada, Shinsuke, Kosugi, Ryouji, Senzaki, Junji, Fukuda, Kenji (2002) Correlation between Inversion Channel Mobility and Interface Traps near the Conduction Band in SiC MOSFETs. Materials Science Forum, 389. 1045-1048 doi:10.4028/www.scientific.net/msf.389-393.1045
In(2002) Materials Science Forum Vol. 389. Trans Tech Publications, Ltd.

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Harada, Shinsuke, Suzuki, Seiji, Senzaki, Junji, Kosugi, Ryouji, Adachi, Kazuhiro, Fukuda, Kenji, Arai, Kazuo (2002) Improved Channel Mobility in Normally-Off 4H-SiC MOSFETs with Buried Channel Structure. Materials Science Forum, 389. 1069-1072 doi:10.4028/www.scientific.net/msf.389-393.1069
Kosugi, Ryouji, Okamoto, Mitsuo, Suzuki, Seiji, Senzaki, Junji, Harada, Shinsuke, Fukuda, Kenji, Arai, Kazuo (2002) Influence of the Wet Re-Oxidation Procedure on Inversion Mobility of 4H-SiC MOSFETs. Materials Science Forum, 389. 1049-1052 doi:10.4028/www.scientific.net/msf.389-393.1049
Hatakeyama, Tetsuo, Harada, Shinsuke, Suzuki, Seiji, Senzaki, Junji, Kosugi, Ryouji, Fukuda, Kenji, Shinohe, Takashi, Arai, Kazuo (2002) Channel Engineering of Buried-Channel 4H-SiC MOSFET Based on the Mobility Model of the Oxide/4H-SiC Interface. Materials Science Forum, 389. 1081-1084 doi:10.4028/www.scientific.net/msf.389-393.1081
Senzaki, Junji, Fukuda, Kenji, Kojima, Kazutoshi, Harada, Shinsuke, Kosugi, Ryouji, Suzuki, Seiji, Suzuki, Takaya, Arai, Kazuo (2002) Significant Improvement of Inversion Channel Mobility in 4H-SiC MOSFET on (11-20) Face Using Hydrogen Post-Oxidation Annealing. Materials Science Forum, 389. 1061-1064 doi:10.4028/www.scientific.net/msf.389-393.1061
Senzaki, Junji, Harada, Shinsuke, Kosugi, Ryouji, Suzuki, Seiji, Fukuda, Kenji, Arai, Kazuo (2002) Improvements in Electrical Properties of n-Type-Implanted 4H-SiC Substrates Using High-Temperature Rapid Thermal Annealing. Materials Science Forum, 389. 795-798 doi:10.4028/www.scientific.net/msf.389-393.795
Suzuki, Seiji, Cho, W.J., Kosugi, Ryouji, Senzaki, Junji, Harada, Shinsuke, Fukuda, Kenji (2001) Influence of Post-Oxidation Process on the MOS Interface and MOSFETs Properties. Materials Science Forum, 353. 643-646 doi:10.4028/www.scientific.net/msf.353-356.643
Suzuki, Seiji, Harada, Shinsuke, Yatsuo, Tsutomu, Kosugi, Ryouji, Senzaki, Junji, Fukuda, Kenji (2003) 4H-SiC Lateral RESURF MOSFET with a Buried Channel Structure. Materials Science Forum, 433. 753-756 doi:10.4028/www.scientific.net/msf.433-436.753
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Suzuki, Seiji, Harada, Shinsuke, Kosugi, Ryoji, Senzaki, Junji, Cho, Won-ju, Fukuda, Kenji (2002) Correlation between channel mobility and shallow interface traps in SiC metal–oxide–semiconductor field-effect transistors. Journal of Applied Physics, 92 (10). 6230-6234 doi:10.1063/1.1513210
Isoya, Junichi, Kosugi, Ryouji, Fukuda, Kenji, Yamasaki, Satoshi (2002) ESR Characterization of SiC Bulk Crystals and SiO2/SiC Interface. Materials Science Forum, 389. 1025-1028 doi:10.4028/www.scientific.net/msf.389-393.1025
 
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