Vote for your favorite mineral in #MinCup25! - Baryte vs. Hematite
It's a heavyweight match between industrial powerhouses as soft #baryte competes against rusty red #hematite.
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Suzuki, Seiji, Harada, Shinsuke, Kosugi, Ryoji, Senzaki, Junji, Cho, Won-ju, Fukuda, Kenji (2002) Correlation between channel mobility and shallow interface traps in SiC metal–oxide–semiconductor field-effect transistors. Journal of Applied Physics, 92 (10). 6230-6234 doi:10.1063/1.1513210

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleCorrelation between channel mobility and shallow interface traps in SiC metal–oxide–semiconductor field-effect transistors
JournalJournal of Applied Physics
AuthorsSuzuki, SeijiAuthor
Harada, ShinsukeAuthor
Kosugi, RyojiAuthor
Senzaki, JunjiAuthor
Cho, Won-juAuthor
Fukuda, KenjiAuthor
Year2002 (November 15)Volume92
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.1513210Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5115280Long-form Identifiermindat:1:5:5115280:4
GUID0
Full ReferenceSuzuki, Seiji, Harada, Shinsuke, Kosugi, Ryoji, Senzaki, Junji, Cho, Won-ju, Fukuda, Kenji (2002) Correlation between channel mobility and shallow interface traps in SiC metal–oxide–semiconductor field-effect transistors. Journal of Applied Physics, 92 (10). 6230-6234 doi:10.1063/1.1513210
Plain TextSuzuki, Seiji, Harada, Shinsuke, Kosugi, Ryoji, Senzaki, Junji, Cho, Won-ju, Fukuda, Kenji (2002) Correlation between channel mobility and shallow interface traps in SiC metal–oxide–semiconductor field-effect transistors. Journal of Applied Physics, 92 (10). 6230-6234 doi:10.1063/1.1513210
In(2002, November) Journal of Applied Physics Vol. 92 (10) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Harada, Shinsuke, Kosugi, Ryoji, Senzaki, Junji, Cho, Won-Ju, Fukuda, Kenji, Arai, Kazuo, Suzuki, Seiji (2002) Relationship between channel mobility and interface state density in SiC metal–oxide–semiconductor field-effect transistor. Journal of Applied Physics, 91 (3). 1568-1571 doi:10.1063/1.1428085
Suzuki, Seiji, Harada, Shinsuke, Kosugi, Ryouji, Senzaki, Junji, Fukuda, Kenji (2002) Correlation between Inversion Channel Mobility and Interface Traps near the Conduction Band in SiC MOSFETs. Materials Science Forum, 389. 1045-1048 doi:10.4028/www.scientific.net/msf.389-393.1045
Cho, Won-ju, Kosugi, Ryoji, Senzaki, Junji, Fukuda, Kenji, Arai, Kazuo, Suzuki, Seiji (2000) Study on electron trapping and interface states of various gate dielectric materials in 4H–SiC metal-oxide-semiconductor capacitors. Applied Physics Letters, 77 (13). 2054-2056 doi:10.1063/1.1312862
Senzaki, Junji, Kojima, Kazutoshi, Harada, Shinsuke, Kosugi, Ryoji, Suzuki, Seiji, Suzuki, Takaya, Fukuda, Kenji (2001) Effects of Pyrogenic Reoxidation Annealing on Inversion Channel Mobility of 4H-SiC Metal-Oxide-Semiconductor Field-Effect Transistor Fabricated on $(11\bar{2}0)$ Face. Japanese Journal of Applied Physics, 40. doi:10.1143/jjap.40.l1201
Hatakeyama, Tetsuo, Harada, Shinsuke, Suzuki, Seiji, Senzaki, Junji, Kosugi, Ryouji, Fukuda, Kenji, Shinohe, Takashi, Arai, Kazuo (2002) Channel Engineering of Buried-Channel 4H-SiC MOSFET Based on the Mobility Model of the Oxide/4H-SiC Interface. Materials Science Forum, 389. 1081-1084 doi:10.4028/www.scientific.net/msf.389-393.1081
Harada, Shinsuke, Suzuki, Seiji, Senzaki, Junji, Kosugi, Ryouji, Adachi, Kazuhiro, Fukuda, Kenji, Arai, Kazuo (2002) Improved Channel Mobility in Normally-Off 4H-SiC MOSFETs with Buried Channel Structure. Materials Science Forum, 389. 1069-1072 doi:10.4028/www.scientific.net/msf.389-393.1069
Cho, Won-ju, Kosugi, Ryoji, Fukuda, Kenji, Arai, Kazuo, Suzuki, Seiji (2000) Improvement of charge trapping by hydrogen post-oxidation annealing in gate oxide of 4H–SiC metal–oxide–semiconductor capacitors. Applied Physics Letters, 77 (8). 1215-1217 doi:10.1063/1.1289806
Kosugi, Ryoji, Cho, Won-ju, Fukuda, Kenji, Arai, Kazuo, Suzuki, Seiji (2002) High-temperature post-oxidation annealing on the low-temperature oxide/4H-SiC(0001). Journal of Applied Physics, 91 (3). 1314-1317 doi:10.1063/1.1428099
Senzaki, Junji, Fukuda, Kenji, Kojima, Kazutoshi, Harada, Shinsuke, Kosugi, Ryouji, Suzuki, Seiji, Suzuki, Takaya, Arai, Kazuo (2002) Significant Improvement of Inversion Channel Mobility in 4H-SiC MOSFET on (11-20) Face Using Hydrogen Post-Oxidation Annealing. Materials Science Forum, 389. 1061-1064 doi:10.4028/www.scientific.net/msf.389-393.1061
Suzuki, Seiji, Harada, Shinsuke, Yatsuo, Tsutomu, Kosugi, Ryouji, Senzaki, Junji, Fukuda, Kenji (2003) 4H-SiC Lateral RESURF MOSFET with a Buried Channel Structure. Materials Science Forum, 433. 753-756 doi:10.4028/www.scientific.net/msf.433-436.753
Kosugi, Ryouji, Okamoto, Mitsuo, Suzuki, Seiji, Senzaki, Junji, Harada, Shinsuke, Fukuda, Kenji, Arai, Kazuo (2002) Influence of the Wet Re-Oxidation Procedure on Inversion Mobility of 4H-SiC MOSFETs. Materials Science Forum, 389. 1049-1052 doi:10.4028/www.scientific.net/msf.389-393.1049
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 19, 2025 17:35:42
Go to top of page