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Li, Sung-Te, Hasegawa, Shigehiko, Yamashita, Nobuhisa, Nakashima, Hisao (1990) Initial stages of aluminum epitaxy on the Si(111)√3×√3-Al surface studied by electron-energy-loss spectroscopy. Applied Surface Science, 41. 118-122 doi:10.1016/0169-4332(89)90043-3

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Reference TypeJournal (article/letter/editorial)
TitleInitial stages of aluminum epitaxy on the Si(111)√3×√3-Al surface studied by electron-energy-loss spectroscopy
JournalApplied Surface Science
AuthorsLi, Sung-TeAuthor
Hasegawa, ShigehikoAuthor
Yamashita, NobuhisaAuthor
Nakashima, HisaoAuthor
Year1990 (January)Volume41
PublisherElsevier BV
DOIdoi:10.1016/0169-4332(89)90043-3Search in ResearchGate
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Mindat Ref. ID9894913Long-form Identifiermindat:1:5:9894913:5
GUID0
Full ReferenceLi, Sung-Te, Hasegawa, Shigehiko, Yamashita, Nobuhisa, Nakashima, Hisao (1990) Initial stages of aluminum epitaxy on the Si(111)√3×√3-Al surface studied by electron-energy-loss spectroscopy. Applied Surface Science, 41. 118-122 doi:10.1016/0169-4332(89)90043-3
Plain TextLi, Sung-Te, Hasegawa, Shigehiko, Yamashita, Nobuhisa, Nakashima, Hisao (1990) Initial stages of aluminum epitaxy on the Si(111)√3×√3-Al surface studied by electron-energy-loss spectroscopy. Applied Surface Science, 41. 118-122 doi:10.1016/0169-4332(89)90043-3
In(n.d.) Applied Surface Science Vol. 41. Elsevier BV

See Also

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Maehashi, Kenzo, Hasegawa, Shigehiko, Nakashima, Hisao (1990) Atomic rearrangement during the initial stages of GaAs growth on Si(111)(√3×√3)-Ga surface. Applied Surface Science, 41. 567-571 doi:10.1016/0169-4332(89)90123-2
Li, Sung-Te, Hasegawa, Shigehiko, Nakamura, Shogo, Nakashima, Hisao (1991) Si(111)($\sqrt{3}\times\sqrt{3}$)-Al Surface Studied by Angle-Resolved Electron-Energy-Loss Spectroscopy. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1671
Li, Sung-Te, Hasegawa, Shigehiko, Nakashima, Hisao (1992) Effects of Adsorption and Thermal Desorption of Atomic Hydrogen on Electronic and Atomic Structures of Si(111)($\sqrt{3}\times\sqrt{3}$)-Al Surface. Japanese Journal of Applied Physics, 31. doi:10.1143/jjap.31.l123
Maehashi, Kenzo, Hasegawa, Shigehiko, Sato, Masamichi, Nakashima, Hisao (1990) Initial Stages of GaAs MBE Growth on Si(111)($ \sqrt{3}{\times}\sqrt{3}$)-Ga Surfaces. Japanese Journal of Applied Physics, 29. doi:10.1143/jjap.29.l13
Li, S (1985) Au adsorbed Si(111) surfaces studied by angle-resolved electron-energy-loss spectroscopy. Applied Surface Science, 22. 275-279 doi:10.1016/0169-4332(85)90060-1
Hasegawa, Shigehiko, Iwasaki, Hiroshi, Li, Sung-Te, Nakamura, Shogo (1985) Si(111)(7×7)-Ge and Si(111)(5×5)-Ge surfaces studied by angle-resolved electron-energy-loss spectroscopy. Physical Review B, 32 (10) 6949-6951 doi:10.1103/physrevb.32.6949
Fissel, Andreas, Krügener, Jan, Osten, Hans Jörg (2009) Influence of boron on the initial stages of Si molecular beam epitaxy on Si(111) studied by reflection high-energy electron diffraction. Surface Science, 603 (3). 477-481 doi:10.1016/j.susc.2008.12.004
Uemura, Akira, Ohkita, Akihiro, Inaba, Hitoshi, Hasegawa, Shigehiko, Nakashima, Hisao (1996) Effects of Si reconstruction on growth mode in studied by scanning tunneling microscopy. Surface Science, 357. 825-829 doi:10.1016/0039-6028(96)00271-3
Williams, R.Stanley, Daley, Richard S., Huang, Judy H., Charatan, Robert M. (1990) Initial stages of metal/semiconductor interface formation: Au and Ag on Si(111). Applied Surface Science, 41. 70-74 doi:10.1016/0169-4332(89)90035-4
Ikeda, Hiroya, Yamada, Tohru, Hotta, Koji, Zaima, Shigeaki, Yasuda, Yukio (1996) Initial oxidation of Si(311) surfaces studied by high-resolution electron energy loss spectroscopy. Applied Surface Science, 100. 431-435 doi:10.1016/0169-4332(96)00314-5
Ichimiya, A., Kohmoto, S., Fujii, T., Horio, Y. (1990) Rheed intensity analysis of Si(111)√3×√3-Ag structure. Applied Surface Science, 41. 82-87 doi:10.1016/0169-4332(89)90037-8
 
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