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Renda, M., Morita, K. (1990) Epitaxial growth of a mono-crystalline metastable AuIn layer at the Au/InP(001) interface. Applied Surface Science, 41. 216-222 doi:10.1016/0169-4332(89)90060-3

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Reference TypeJournal (article/letter/editorial)
TitleEpitaxial growth of a mono-crystalline metastable AuIn layer at the Au/InP(001) interface
JournalApplied Surface Science
AuthorsRenda, M.Author
Morita, K.Author
Year1990 (January)Volume41
PublisherElsevier BV
DOIdoi:10.1016/0169-4332(89)90060-3Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID9894930Long-form Identifiermindat:1:5:9894930:2
GUID0
Full ReferenceRenda, M., Morita, K. (1990) Epitaxial growth of a mono-crystalline metastable AuIn layer at the Au/InP(001) interface. Applied Surface Science, 41. 216-222 doi:10.1016/0169-4332(89)90060-3
Plain TextRenda, M., Morita, K. (1990) Epitaxial growth of a mono-crystalline metastable AuIn layer at the Au/InP(001) interface. Applied Surface Science, 41. 216-222 doi:10.1016/0169-4332(89)90060-3
In(n.d.) Applied Surface Science Vol. 41. Elsevier BV

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Katoh, Takanori, Morita, Kenji (1992) Epitaxial growth of thin Au layers by room temperature deposition on a InP(001)-p(2 Γ— 4) surface. Applied Surface Science, 56. 199-204 doi:10.1016/0169-4332(92)90234-o
Ourmazd, A., Fuoss, P.H., Bevk, J., Morar, J.F. (1990) The Si(001)/SiO2 interface. Applied Surface Science, 41. 365-371 doi:10.1016/0169-4332(89)90086-x
Kanemitsu, Yoshihiko, Imamura, Shunji (1990) Charge transport and trapping at the interface in two-layer organic photoconductors. Applied Surface Science, 41. 544-547 doi:10.1016/0169-4332(89)90119-0
Katoh, Takanori, Morita, Kenji (1992) Transient phosphorus depletion in the InP(001) surface layers induced by room temperature deposition of a thin Au film. Applied Surface Science, 56. 185-192 doi:10.1016/0169-4332(92)90232-m
Kanski, J., Nilsson, P.O., Karlsson, U.O., Svensson, S.P. (1992) Photoemission study of a thin epitaxial InAs layer on InP(001). Applied Surface Science, 56. 604-609 doi:10.1016/0169-4332(92)90308-k
Hecht, M.H., Bell, L.D., Kaiser, W.J. (1990) Ballistic-electron-emission microscopy of subsurface defects at the Au-GaAs(100) interface. Applied Surface Science, 41. 17-24 doi:10.1016/0169-4332(89)90027-5
Kamiura, Y., Hashimoto, F., Iwami, M. (1990) Iron accumulation at the Si-SiO2 interface and possible reduction of SiO2. Applied Surface Science, 41. 447-450 doi:10.1016/0169-4332(89)90101-3
Horikawa, H., Akiyama, M., Onozawa, S., Kawai, Y., Sakuta, M. (1990) Interfacial layers of InP/Si heteroepitaxy. Applied Surface Science, 41. 598-603 doi:10.1016/0169-4332(89)90129-3
Hanebuchi, M., Katoh, T., Morita, K. (1995) Characterization of thin Ag films deposited onto InP(001)-p(2 Γ— 4) surface at room temperature by means of LEED, RHEED, AES and RBS-channeling techniques. Applied Surface Science, 89. 113-119 doi:10.1016/0169-4332(95)00035-6
Fujimura, Norifumi, Ito, Taichiro (1990) TiSi2 formation at the Ti-rich TiNx/Si interface. Applied Surface Science, 41. 272-276 doi:10.1016/0169-4332(89)90069-x
Tung, R.T., Schrey, F. (1990) Epitaxial CoSi2/Si(111) interfaces. Applied Surface Science, 41. 223-229 doi:10.1016/0169-4332(89)90061-5
 
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