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Goto, S., Kakibayashi, H., Kawata, M., Usagawa, T. (1990) Evaluation of disordering at low doping concentration in selectively Si-doped Al0.3Ga0.7As/GaAs heterointerfaces. Applied Surface Science, 41. 480-486 doi:10.1016/0169-4332(89)90106-2

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Reference TypeJournal (article/letter/editorial)
TitleEvaluation of disordering at low doping concentration in selectively Si-doped Al0.3Ga0.7As/GaAs heterointerfaces
JournalApplied Surface Science
AuthorsGoto, S.Author
Kakibayashi, H.Author
Kawata, M.Author
Usagawa, T.Author
Year1990 (January)Volume41
PublisherElsevier BV
DOIdoi:10.1016/0169-4332(89)90106-2Search in ResearchGate
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Mindat Ref. ID9894976Long-form Identifiermindat:1:5:9894976:4
GUID0
Full ReferenceGoto, S., Kakibayashi, H., Kawata, M., Usagawa, T. (1990) Evaluation of disordering at low doping concentration in selectively Si-doped Al0.3Ga0.7As/GaAs heterointerfaces. Applied Surface Science, 41. 480-486 doi:10.1016/0169-4332(89)90106-2
Plain TextGoto, S., Kakibayashi, H., Kawata, M., Usagawa, T. (1990) Evaluation of disordering at low doping concentration in selectively Si-doped Al0.3Ga0.7As/GaAs heterointerfaces. Applied Surface Science, 41. 480-486 doi:10.1016/0169-4332(89)90106-2
In(n.d.) Applied Surface Science Vol. 41. Elsevier BV

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Yasuda, Y., Zaima, S., Kaida, T., Koide, Y. (1990) Formation of Si-SiO2 interfaces at low temperatures using microwave-excited plasma. Applied Surface Science, 41. 429-432 doi:10.1016/0169-4332(89)90097-4
Yamada Maruo, Y., Oshima, M., Waho, T., Kawamura, T., Maeyama, S., Miyahara, T. (1990) Photoemission studies of bonding properties at the MBE-grown CaF2/GaAs interface. Applied Surface Science, 41. 647-653 doi:10.1016/0169-4332(89)90137-2
Hongo, S., Kataoka, Y., Urano, T., Kanaji, T. (1990) Evaluation by resonant light scattering of ZnTe epitaxial layer deposited on GaAs. Applied Surface Science, 41. 522-525 doi:10.1016/0169-4332(89)90114-1
Horikawa, H., Akiyama, M., Onozawa, S., Kawai, Y., Sakuta, M. (1990) Interfacial layers of InP/Si heteroepitaxy. Applied Surface Science, 41. 598-603 doi:10.1016/0169-4332(89)90129-3
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Hirai, M., Ohnishi, H., Fujita, K., Watanabe, T. (1994) Substrate misorientation dependence of thermal stability of Si atom in Si atomic layer doped GaAs on GaAs(111)A. Applied Surface Science, 82. 23-27 doi:10.1016/0169-4332(94)90190-2
Aoyama, T., Sugii, T., Ito, T. (1990) Determination of band line-up in β-SiC/Si heterojunction for Si-HBT's. Applied Surface Science, 41. 584-586 doi:10.1016/0169-4332(89)90126-8
Maehashi, Kenzo, Hasegawa, Shigehiko, Nakashima, Hisao (1990) Atomic rearrangement during the initial stages of GaAs growth on Si(111)(√3×√3)-Ga surface. Applied Surface Science, 41. 567-571 doi:10.1016/0169-4332(89)90123-2
Borensztein, Y., Lopez-Rios, T., Vuye, G. (1990) Roughness induced at Si(111) surfaces by high temperature heating. Applied Surface Science, 41. 439-442 doi:10.1016/0169-4332(89)90099-8
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Yano, M., Ashida, M., Iwai, Y., Inoue, M. (1990) Characteristic properties of III–VA/III-VB heterointerfaces grown by molecular beam epitaxy. Applied Surface Science, 41. 457-463 doi:10.1016/0169-4332(89)90103-7
 
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