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Holzmann, M., Többen, D., Abstreiter, G. (1996) Transport in silicon/germanium nanostructures. Applied Surface Science, 102. 230-236 doi:10.1016/0169-4332(96)00054-2

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Reference TypeJournal (article/letter/editorial)
TitleTransport in silicon/germanium nanostructures
JournalApplied Surface Science
AuthorsHolzmann, M.Author
Többen, D.Author
Abstreiter, G.Author
Year1996 (August)Volume102
PublisherElsevier BV
DOIdoi:10.1016/0169-4332(96)00054-2Search in ResearchGate
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Mindat Ref. ID9898596Long-form Identifiermindat:1:5:9898596:0
GUID0
Full ReferenceHolzmann, M., Többen, D., Abstreiter, G. (1996) Transport in silicon/germanium nanostructures. Applied Surface Science, 102. 230-236 doi:10.1016/0169-4332(96)00054-2
Plain TextHolzmann, M., Többen, D., Abstreiter, G. (1996) Transport in silicon/germanium nanostructures. Applied Surface Science, 102. 230-236 doi:10.1016/0169-4332(96)00054-2
In(n.d.) Applied Surface Science Vol. 102. Elsevier BV

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Nützel, J.F., Holzmann, M., Schittenhelm, P., Abstreiter, G. (1996) Segregation of n-dopants on SiGe surfaces. Applied Surface Science, 102. 98-101 doi:10.1016/0169-4332(96)00029-3
Zunger, Alex, Wang, Lin-Wang (1996) Theory of silicon nanostructures. Applied Surface Science, 102. 350-359 doi:10.1016/0169-4332(96)00078-5
Nützel, J.F., Brichzin, P., Abstreiter, G. (1996) RHEED investigations of surface diffusion on Si(001). Applied Surface Science, 102. 78-81 doi:10.1016/0169-4332(96)00024-4
Kelires, P.C. (1996) Microstructural and elastic properties of silicon-germanium-carbon alloys. Applied Surface Science, 102. 12-16 doi:10.1016/0169-4332(96)00010-4
Kasper, Erich (1996) Silicium germanium heterodevices. Applied Surface Science, 102. 189-193 doi:10.1016/0169-4332(96)00047-5
Holzmann, M., Többen, D., Baumgartner, P., Abstreiter, G., Kriele, A., Lorenz, H., Schäffler, F. (1996) Magnetotransport of electrons in arrays of wires in Si/Si0.7Ge0.3 heterostructures. Surface Science, 361. 673-676 doi:10.1016/0039-6028(96)00497-9
Jaumann, M., Stimmer, J., Schittenhelm, P., Nützel, J.F., Abstreiter, G., Neufeld, E., Holländer, B., Buchal, Ch. (1996) Room temperature electroluminescence of Er-implanted silicon diodes grown by MBE. Applied Surface Science, 102. 327-330 doi:10.1016/0169-4332(96)00095-5
Tersoff, J. (1996) Stress-induced roughening in epitaxial growth. Applied Surface Science, 102. 1-2 doi:10.1016/0169-4332(96)00002-5
Ossicini, Stefano, Dorigoni, L., Bisi, O. (1996) Luminescence in porous silicon: the role of confinement and passivation. Applied Surface Science, 102. 395-398 doi:10.1016/0169-4332(96)00085-2
Holzmann, M., Többen, D., Abstreiter, G., Wendel, M., Lorenz, H., Kotthaus, J. P., Schäffler, F. (1995) One‐dimensional transport of electrons in Si/Si0.7Ge0.3 heterostructures. Applied Physics Letters, 66 (7). 833-835 doi:10.1063/1.113437
Hattori, T., Watanabe, K., Ohashi, M., Matsuda, M., Yasutake, M. (1996) Electron tunneling through chemical oxide of silicon. Applied Surface Science, 102. 86-89 doi:10.1016/0169-4332(96)00026-8
 
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