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Nützel, J.F., Holzmann, M., Schittenhelm, P., Abstreiter, G. (1996) Segregation of n-dopants on SiGe surfaces. Applied Surface Science, 102. 98-101 doi:10.1016/0169-4332(96)00029-3

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Reference TypeJournal (article/letter/editorial)
TitleSegregation of n-dopants on SiGe surfaces
JournalApplied Surface Science
AuthorsNützel, J.F.Author
Holzmann, M.Author
Schittenhelm, P.Author
Abstreiter, G.Author
Year1996 (August)Volume102
PublisherElsevier BV
DOIdoi:10.1016/0169-4332(96)00029-3Search in ResearchGate
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Mindat Ref. ID9898571Long-form Identifiermindat:1:5:9898571:1
GUID0
Full ReferenceNützel, J.F., Holzmann, M., Schittenhelm, P., Abstreiter, G. (1996) Segregation of n-dopants on SiGe surfaces. Applied Surface Science, 102. 98-101 doi:10.1016/0169-4332(96)00029-3
Plain TextNützel, J.F., Holzmann, M., Schittenhelm, P., Abstreiter, G. (1996) Segregation of n-dopants on SiGe surfaces. Applied Surface Science, 102. 98-101 doi:10.1016/0169-4332(96)00029-3
In(n.d.) Applied Surface Science Vol. 102. Elsevier BV

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Nützel, J.F., Brichzin, P., Abstreiter, G. (1996) RHEED investigations of surface diffusion on Si(001). Applied Surface Science, 102. 78-81 doi:10.1016/0169-4332(96)00024-4
Jaumann, M., Stimmer, J., Schittenhelm, P., Nützel, J.F., Abstreiter, G., Neufeld, E., Holländer, B., Buchal, Ch. (1996) Room temperature electroluminescence of Er-implanted silicon diodes grown by MBE. Applied Surface Science, 102. 327-330 doi:10.1016/0169-4332(96)00095-5
Holzmann, M., Többen, D., Abstreiter, G. (1996) Transport in silicon/germanium nanostructures. Applied Surface Science, 102. 230-236 doi:10.1016/0169-4332(96)00054-2
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Geiler, H.D., Krügel, S., Nützel, J., Friess, E., Abstreiter, G. (1993) Investigation of the relaxation of excess carriers in SiGe-heterostructures by photothermal measurement. Applied Surface Science, 63. 260-265 doi:10.1016/0169-4332(93)90102-h
Barucca, G., Lucchetti, L., Majni, G., Mengucci, P., Murri, R., Pinto, N. (1996) Strain relaxation through islands formation in epitaxial SiGe thin films. Applied Surface Science, 102. 73-77 doi:10.1016/0169-4332(96)00023-2
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Dollfus, Philippe, Musalem, François-Xavier, Galdin, Sylvie, Hesto, Patrice (1996) Operation of SiGe channel heterojunction p-MOSFET. Applied Surface Science, 102. 259-262 doi:10.1016/0169-4332(96)00061-x
Shiraki, Y., Sunamura, H., Usami, N., Fukatsu, S. (1996) Formation and optical properties of SiGe/Si quantum structures. Applied Surface Science, 102. 263-271 doi:10.1016/0169-4332(96)00062-1
Holzmann, M., Baumgartner, P., Engel, C., Nützel, J. F., Abstreiter, G., Schäffler, F. (1996) Fabrication of n‐ and p‐channel in‐plane‐gate transistors from Si/SiGe/Ge heterostructures by focused laser beam writing. Applied Physics Letters, 68 (21). 3025-3027 doi:10.1063/1.115565
Corbin, E., Williams, C.J., Jaros, M. (1996) Optical spectra and recombination in SiGe/Si heterostructures for infrared applications. Applied Surface Science, 102. 336-341 doi:10.1016/0169-4332(96)00075-x
 
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