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Corbin, E., Williams, C.J., Jaros, M. (1996) Optical spectra and recombination in SiGe/Si heterostructures for infrared applications. Applied Surface Science, 102. 336-341 doi:10.1016/0169-4332(96)00075-x

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Reference TypeJournal (article/letter/editorial)
TitleOptical spectra and recombination in SiGe/Si heterostructures for infrared applications
JournalApplied Surface Science
AuthorsCorbin, E.Author
Williams, C.J.Author
Jaros, M.Author
Year1996 (August)Volume102
PublisherElsevier BV
DOIdoi:10.1016/0169-4332(96)00075-xSearch in ResearchGate
Generate Citation Formats
Mindat Ref. ID9898617Long-form Identifiermindat:1:5:9898617:2
GUID0
Full ReferenceCorbin, E., Williams, C.J., Jaros, M. (1996) Optical spectra and recombination in SiGe/Si heterostructures for infrared applications. Applied Surface Science, 102. 336-341 doi:10.1016/0169-4332(96)00075-x
Plain TextCorbin, E., Williams, C.J., Jaros, M. (1996) Optical spectra and recombination in SiGe/Si heterostructures for infrared applications. Applied Surface Science, 102. 336-341 doi:10.1016/0169-4332(96)00075-x
In(n.d.) Applied Surface Science Vol. 102. Elsevier BV

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Whall, T.E. (1996) p-channel SiGe heterostructures for field effect applications. Applied Surface Science, 102. 221-229 doi:10.1016/0169-4332(96)00053-0
Chen, W.M., Buyanova, I.A., Henry, A., Ni, W.-X., Hansson, G.V., Monemar, B. (1996) Important defect aspects in optoelectronic applications of Si- and SiGe/Si-heterostructures. Applied Surface Science, 102. 279-282 doi:10.1016/0169-4332(96)00064-5
Shiraki, Y., Sunamura, H., Usami, N., Fukatsu, S. (1996) Formation and optical properties of SiGe/Si quantum structures. Applied Surface Science, 102. 263-271 doi:10.1016/0169-4332(96)00062-1
Olajos, Janos, Engvall, Jesper, Grimmeiss, Hermann G., Kibbel, Horst, Presting, Hartmut (1996) Optical anisotropies in strained Si/SiGe systems. Applied Surface Science, 102. 283-287 doi:10.1016/0169-4332(96)00065-7
Williams, C.J., Corbin, E., Jaros, M., Herbert, D.C. (1998) Auger recombination in strained SixGe1−x/Si superlattices. Physica B: Condensed Matter, 254 (3). 240-248 doi:10.1016/s0921-4526(98)00444-x
Berroir, J.M., Zanier, S., Guldner, Y., Vieren, J.P., Sagnes, I., Campidelli, Y., Badoz, P.A. (1996) Infrared spectroscopy in p-type SiGe/Si quantum wells. Applied Surface Science, 102. 331-335 doi:10.1016/0169-4332(96)00074-8
Kitchin, M.R., Shaw, M.J., Corbin, E., Hagon, J.P., Jaros, M. (2000) Absorption and emission spectra of InAs/Ga1−xInxSb/AlSb nanostructures for infrared applications. Applied Surface Science, 166. 35-39 doi:10.1016/s0169-4332(00)00424-4
Garchery, L., Sagnes, I., Badoz, P.A. (1996) Conduction band discontinuity and electron mobility in a strained Si/SiGe heterostructure. Applied Surface Science, 102. 202-207 doi:10.1016/0169-4332(96)00049-9
Di Gaspare, L., Capellini, G., Sebastiani, M., Chudoba, C., Evangelisti, F. (1996) Ge/Si(100) heterostructures: a photoemission and low-energy yield spectroscopy investigation. Applied Surface Science, 102. 94-97 doi:10.1016/0169-4332(96)00027-x
Schmidt, M., Brauer, M., Hoffmann, V. (1996) Influence of scattering on internal photoemission in heterostructures. Applied Surface Science, 102. 303-307 doi:10.1016/0169-4332(96)00069-4
Radamson, H.H., Ni, W.-X., Hansson, G.V. (1996) The role of low temperature growth defects for the stability of strained Si/Si1−xGex heterostructures. Applied Surface Science, 102. 82-85 doi:10.1016/0169-4332(96)00025-6
 
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