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Whall, T.E. (1996) p-channel SiGe heterostructures for field effect applications. Applied Surface Science, 102. 221-229 doi:10.1016/0169-4332(96)00053-0

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Reference TypeJournal (article/letter/editorial)
Titlep-channel SiGe heterostructures for field effect applications
JournalApplied Surface Science
AuthorsWhall, T.E.Author
Year1996 (August)Volume102
PublisherElsevier BV
DOIdoi:10.1016/0169-4332(96)00053-0Search in ResearchGate
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Mindat Ref. ID9898595Long-form Identifiermindat:1:5:9898595:1
GUID0
Full ReferenceWhall, T.E. (1996) p-channel SiGe heterostructures for field effect applications. Applied Surface Science, 102. 221-229 doi:10.1016/0169-4332(96)00053-0
Plain TextWhall, T.E. (1996) p-channel SiGe heterostructures for field effect applications. Applied Surface Science, 102. 221-229 doi:10.1016/0169-4332(96)00053-0
In(n.d.) Applied Surface Science Vol. 102. Elsevier BV

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Corbin, E., Williams, C.J., Jaros, M. (1996) Optical spectra and recombination in SiGe/Si heterostructures for infrared applications. Applied Surface Science, 102. 336-341 doi:10.1016/0169-4332(96)00075-x
Dollfus, Philippe, Musalem, François-Xavier, Galdin, Sylvie, Hesto, Patrice (1996) Operation of SiGe channel heterojunction p-MOSFET. Applied Surface Science, 102. 259-262 doi:10.1016/0169-4332(96)00061-x
Chen, W.M., Buyanova, I.A., Henry, A., Ni, W.-X., Hansson, G.V., Monemar, B. (1996) Important defect aspects in optoelectronic applications of Si- and SiGe/Si-heterostructures. Applied Surface Science, 102. 279-282 doi:10.1016/0169-4332(96)00064-5
Whall, T.E. (1995) Two-dimensional hole gas in SiGe heterostructures: electrical properties and field effect applications. Journal of Crystal Growth, 157 (1). 353-361 doi:10.1016/0022-0248(95)00413-0
Nützel, J.F., Holzmann, M., Schittenhelm, P., Abstreiter, G. (1996) Segregation of n-dopants on SiGe surfaces. Applied Surface Science, 102. 98-101 doi:10.1016/0169-4332(96)00029-3
Lagomarsino, S., Derrien, J., Kelires, P. (1996) Preface. Applied Surface Science, 102. doi:10.1016/0169-4332(96)80028-6
Schmidt, M., Brauer, M., Hoffmann, V. (1996) Influence of scattering on internal photoemission in heterostructures. Applied Surface Science, 102. 303-307 doi:10.1016/0169-4332(96)00069-4
Shiraki, Y., Sunamura, H., Usami, N., Fukatsu, S. (1996) Formation and optical properties of SiGe/Si quantum structures. Applied Surface Science, 102. 263-271 doi:10.1016/0169-4332(96)00062-1
Rupp, T., Eisele, I., Gravesteijn, D.J. (1996) Strain relaxation and self-organizing MBE-growth of local SiGe-structures. Applied Surface Science, 102. 385-389 doi:10.1016/0169-4332(96)00083-9
(1996) Author index. Applied Surface Science, 93. 376-378 doi:10.1016/0169-4332(96)80008-0
Barucca, G., Lucchetti, L., Majni, G., Mengucci, P., Murri, R., Pinto, N. (1996) Strain relaxation through islands formation in epitaxial SiGe thin films. Applied Surface Science, 102. 73-77 doi:10.1016/0169-4332(96)00023-2
 
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