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Izumi, T., Nishiwaki, H., Tambo, T., Tatsuyama, C. (1996) GaSe films grown on a GaAs(001) surface at high temperature using a thermal evaporation of GaSe. Applied Surface Science, 104. 570-574 doi:10.1016/s0169-4332(96)00204-8

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Reference TypeJournal (article/letter/editorial)
TitleGaSe films grown on a GaAs(001) surface at high temperature using a thermal evaporation of GaSe
JournalApplied Surface Science
AuthorsIzumi, T.Author
Nishiwaki, H.Author
Tambo, T.Author
Tatsuyama, C.Author
Year1996 (September)Volume104
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(96)00204-8Search in ResearchGate
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Mindat Ref. ID9898802Long-form Identifiermindat:1:5:9898802:8
GUID0
Full ReferenceIzumi, T., Nishiwaki, H., Tambo, T., Tatsuyama, C. (1996) GaSe films grown on a GaAs(001) surface at high temperature using a thermal evaporation of GaSe. Applied Surface Science, 104. 570-574 doi:10.1016/s0169-4332(96)00204-8
Plain TextIzumi, T., Nishiwaki, H., Tambo, T., Tatsuyama, C. (1996) GaSe films grown on a GaAs(001) surface at high temperature using a thermal evaporation of GaSe. Applied Surface Science, 104. 570-574 doi:10.1016/s0169-4332(96)00204-8
In(n.d.) Applied Surface Science Vol. 104. Elsevier BV

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Tatsuyama, C., Nishiwaki, H., Asai, K., Lim, K.K., Tambo, T., Ueba, H. (1997) Substrate orientation dependence of the growth of GaSe thin films on GaAs. Applied Surface Science, 117. 523-529 doi:10.1016/s0169-4332(97)80136-5
Mori, M., Li, D.M., Yamazaki, M., Tambo, T., Ueba, H., Tatsuyama, C. (1996) Heteroepitaxial growth of InSb on Si(001) surface via Ge buffer layers. Applied Surface Science, 104. 563-569 doi:10.1016/s0169-4332(96)00203-6
Tambo, T, Arakawa, T, Shimizu, A, Hori, S, Tatsuyama, C (2000) Epitaxial growth of Bi2Sr2CuOx films onto Si(001) by molecular beam epitaxy. Applied Surface Science, 159. 161-166 doi:10.1016/s0169-4332(00)00073-8
Mori, M., Tsubosaki, Y., Tambo, T., Ueba, H., Tatsuyama, C. (1997) Growth of InSb films on a Si(001) substrate with Ge buffer layer. Applied Surface Science, 117. 512-517 doi:10.1016/s0169-4332(97)80134-1
Islam, A. B. M. O., Tambo, T., Tatsuyama, C. (1999) Growth temperature dependence of GaS thin films on GaAs(001) surface. Journal of Applied Physics, 85 (8). 4003-4009 doi:10.1063/1.370304
Islam, A.B.M.O., Asai, K., Lim, K.K., Tambo, T., Tatsuyama, C. (1998) Initial stage of the growth of GaS thin films on GaAs. Applied Surface Science, 123. 508-512 doi:10.1016/s0169-4332(97)00535-7
GRUZNEV, D, OHMURA, K, MORI, M, TAMBO, T, LIFSHITS, V, TATSUYAMA, C (2004) Modification of Sb/Si(001) interface by incorporation of In(4 × 3) surface reconstruction. Applied Surface Science, 237. 99-104 doi:10.1016/s0169-4332(04)01031-1
Mori, M., Akae, N., Uotani, K., Fujimoto, N., Tambo, T., Tatsuyama, C. (2003) Heteroepitaxial growth of InSb films on a Si(0 0 1) substrate via AlSb buffer layer. Applied Surface Science, 216. 569-574 doi:10.1016/s0169-4332(03)00516-6
Bhuiyan, M.N.K., Matsuda, A., Yasumura, T., Tambo, T., Tatsuyama, C. (2003) Study of epitaxial SrTiO3 (STO) thin films grown on Si(0 0 1)–2 × 1 substrates by molecular beam epitaxy. Applied Surface Science, 216. 590-595 doi:10.1016/s0169-4332(03)00452-5
Rao, B.V, Okamoto, T, Shinmura, A, Gruznev, D, Mori, M, Tambo, T, Tatsuyama, C (2000) Growth temperature effect on the heteroepitaxy of InSb on Si(111). Applied Surface Science, 159. 335-340 doi:10.1016/s0169-4332(00)00074-x
Islam, A.B.M.O, Nishiyama, Y, Tambo, T, Tatsuyama, C, Ito, T (2000) Characterization of GaS-deposited CVD diamond films by AES and XPS. Applied Surface Science, 159. 588-593 doi:10.1016/s0169-4332(00)00066-0
 
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