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Tambo, T, Arakawa, T, Shimizu, A, Hori, S, Tatsuyama, C (2000) Epitaxial growth of Bi2Sr2CuOx films onto Si(001) by molecular beam epitaxy. Applied Surface Science, 159. 161-166 doi:10.1016/s0169-4332(00)00073-8

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Reference TypeJournal (article/letter/editorial)
TitleEpitaxial growth of Bi2Sr2CuOx films onto Si(001) by molecular beam epitaxy
JournalApplied Surface Science
AuthorsTambo, TAuthor
Arakawa, TAuthor
Shimizu, AAuthor
Hori, SAuthor
Tatsuyama, CAuthor
Year2000 (June)Volume159
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(00)00073-8Search in ResearchGate
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Mindat Ref. ID9901913Long-form Identifiermindat:1:5:9901913:0
GUID0
Full ReferenceTambo, T, Arakawa, T, Shimizu, A, Hori, S, Tatsuyama, C (2000) Epitaxial growth of Bi2Sr2CuOx films onto Si(001) by molecular beam epitaxy. Applied Surface Science, 159. 161-166 doi:10.1016/s0169-4332(00)00073-8
Plain TextTambo, T, Arakawa, T, Shimizu, A, Hori, S, Tatsuyama, C (2000) Epitaxial growth of Bi2Sr2CuOx films onto Si(001) by molecular beam epitaxy. Applied Surface Science, 159. 161-166 doi:10.1016/s0169-4332(00)00073-8
In(n.d.) Applied Surface Science Vol. 159. Elsevier BV

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Bhuiyan, M.N.K., Matsuda, A., Yasumura, T., Tambo, T., Tatsuyama, C. (2003) Study of epitaxial SrTiO3 (STO) thin films grown on Si(0 0 1)–2 × 1 substrates by molecular beam epitaxy. Applied Surface Science, 216. 590-595 doi:10.1016/s0169-4332(03)00452-5
Mori, M, Nizawa, Y, Nishi, Y, Mae, K, Tambo, T, Tatsuyama, C (2000) Effect of current flow direction on the heteroepitaxial growth of InSb films on Ge/Si(001) substrate heated by direct current. Applied Surface Science, 159. 328-334 doi:10.1016/s0169-4332(00)00075-1
Islam, A.B.M.O, Nishiyama, Y, Tambo, T, Tatsuyama, C, Ito, T (2000) Characterization of GaS-deposited CVD diamond films by AES and XPS. Applied Surface Science, 159. 588-593 doi:10.1016/s0169-4332(00)00066-0
Rao, B.V, Okamoto, T, Shinmura, A, Gruznev, D, Mori, M, Tambo, T, Tatsuyama, C (2000) Growth temperature effect on the heteroepitaxy of InSb on Si(111). Applied Surface Science, 159. 335-340 doi:10.1016/s0169-4332(00)00074-x
Mori, M., Tsubosaki, Y., Tambo, T., Ueba, H., Tatsuyama, C. (1997) Growth of InSb films on a Si(001) substrate with Ge buffer layer. Applied Surface Science, 117. 512-517 doi:10.1016/s0169-4332(97)80134-1
Bacchin, G, Umeno, A, Nishinaga, T (2000) Lateral growth in molecular beam epitaxy by low angle incidence microchannel epitaxy. Applied Surface Science, 159. 270-276 doi:10.1016/s0169-4332(00)00083-0
Izumi, T., Nishiwaki, H., Tambo, T., Tatsuyama, C. (1996) Gaî—¸Se films grown on a GaAs(001) surface at high temperature using a thermal evaporation of GaSe. Applied Surface Science, 104. 570-574 doi:10.1016/s0169-4332(96)00204-8
Mori, M., Li, D.M., Yamazaki, M., Tambo, T., Ueba, H., Tatsuyama, C. (1996) Heteroepitaxial growth of InSb on Si(001) surface via Ge buffer layers. Applied Surface Science, 104. 563-569 doi:10.1016/s0169-4332(96)00203-6
Rao, B.V, Okamoto, T, Shinmura, A, Gruznev, D, Tambo, T, Tatsuyama, C (2000) Role of In(4×1) superstructure on the heteroepitaxy of InSb on Si(111) substrate. Applied Surface Science, 162. 263-269 doi:10.1016/s0169-4332(00)00202-6
Niu, F, Hoerman, B.H, Wessels, B.W (2000) Growth and microstructure of MgO thin films on Si(100) substrates by metal–organic molecular beam epitaxy. Applied Surface Science, 161. 74-77 doi:10.1016/s0169-4332(00)00127-6
Tambo, Toyokazu, Shimizu, Atsushi, Matsuda, Akiyoshi, Tatsuyama, Chiei (2000) In-situAnnealing of Thin SrO Films Grown on Si(001)-2×1 by Molecular Beam Epitaxy. Japanese Journal of Applied Physics, 39. 6432-6434 doi:10.1143/jjap.39.6432
 
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