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Bacchin, G, Umeno, A, Nishinaga, T (2000) Lateral growth in molecular beam epitaxy by low angle incidence microchannel epitaxy. Applied Surface Science, 159. 270-276 doi:10.1016/s0169-4332(00)00083-0

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Reference TypeJournal (article/letter/editorial)
TitleLateral growth in molecular beam epitaxy by low angle incidence microchannel epitaxy
JournalApplied Surface Science
AuthorsBacchin, GAuthor
Umeno, AAuthor
Nishinaga, TAuthor
Year2000 (June)Volume159
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(00)00083-0Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID9901923Long-form Identifiermindat:1:5:9901923:7
GUID0
Full ReferenceBacchin, G, Umeno, A, Nishinaga, T (2000) Lateral growth in molecular beam epitaxy by low angle incidence microchannel epitaxy. Applied Surface Science, 159. 270-276 doi:10.1016/s0169-4332(00)00083-0
Plain TextBacchin, G, Umeno, A, Nishinaga, T (2000) Lateral growth in molecular beam epitaxy by low angle incidence microchannel epitaxy. Applied Surface Science, 159. 270-276 doi:10.1016/s0169-4332(00)00083-0
In(n.d.) Applied Surface Science Vol. 159. Elsevier BV

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Bacchin, G, Nishinaga, T (2000) A new way to achieve both selective and lateral growth by molecular beam epitaxy: low angle incidence microchannel epitaxy. Journal of Crystal Growth, 208 (1). 1-10 doi:10.1016/s0022-0248(99)00497-2
Umeno, A, Bacchin, G, Nishinaga, T (2000) AFM analysis of sidewall formation in low angle incidence microchannel epitaxy of GaAs. Journal of Crystal Growth, 220 (4). 355-363 doi:10.1016/s0022-0248(00)00822-8
Tambo, T, Arakawa, T, Shimizu, A, Hori, S, Tatsuyama, C (2000) Epitaxial growth of Bi2Sr2CuOx films onto Si(001) by molecular beam epitaxy. Applied Surface Science, 159. 161-166 doi:10.1016/s0169-4332(00)00073-8
Bacchin, G., Tsunoda, K., Nishinaga, T. (1998) Selective Area Growth by Periodic Supply Molecular Beam Epitaxy. Surface Review and Letters, 5 (3). 731-738 doi:10.1142/s0218625x98001109
Goto, T., Hada, T., Yanagisawa, J., Wakaya, F., Yuba, Y., Gamo, K. (2000) Carrier profiles and electron traps at a growth-interrupted layer in GaAs fabricated by a focused ion beam and molecular beam epitaxy combined system. Applied Surface Science, 159. 277-281 doi:10.1016/s0169-4332(00)00095-7
Naritsuka, S., Suzuki, T., Saitoh, K., Maruyama, T., Nishinaga, T. (2005) Growth mechanism of beam-induced lateral epitaxy on (001) GaAs substrate in molecular beam epitaxy. Journal of Crystal Growth, 276 (1). 64-71 doi:10.1016/j.jcrysgro.2004.10.159
Naritsuka, S., Lin, C.H., Uchiyama, S., Maruyama, T. (2013) Coalescence of a-plane GaN stripes in low angle incidence microchannel epitaxy by ammonia-based metal-organic molecular beam epitaxy. Journal of Crystal Growth, 378. 303-306 doi:10.1016/j.jcrysgro.2012.11.001
Matsukura, F, Abe, E, Ohno, Y, Ohno, H (2000) Molecular beam epitaxy of GaSb with high concentration of Mn. Applied Surface Science, 159. 265-269 doi:10.1016/s0169-4332(00)00108-2
Taylor, M.E., Atwater, Harry A. (1998) Monte Carlo simulations of epitaxial growth: comparison of pulsed laser deposition and molecular beam epitaxy. Applied Surface Science, 127. 159-163 doi:10.1016/s0169-4332(97)00626-0
Wang, G, Ogawa, T, Soga, T, Egawa, T, Jimbo, T, Umeno, M (2000) Hydrogenation of GaAs-on-Si Schottky diodes by PH3-added H2 plasma. Applied Surface Science, 159. 191-196 doi:10.1016/s0169-4332(00)00049-0
Niu, F, Hoerman, B.H, Wessels, B.W (2000) Growth and microstructure of MgO thin films on Si(100) substrates by metal–organic molecular beam epitaxy. Applied Surface Science, 161. 74-77 doi:10.1016/s0169-4332(00)00127-6
 
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