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Hibino, H., Sumitomo, K., Ogino, T. (1998) Growth process of twinned epitaxial layers on Si(111)-B and their thermal stability. Applied Surface Science, 130. 41-46 doi:10.1016/s0169-4332(98)00022-1

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Reference TypeJournal (article/letter/editorial)
TitleGrowth process of twinned epitaxial layers on Si(111)-B and their thermal stability
JournalApplied Surface Science
AuthorsHibino, H.Author
Sumitomo, K.Author
Ogino, T.Author
Year1998 (June)Volume130
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(98)00022-1Search in ResearchGate
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Mindat Ref. ID9900346Long-form Identifiermindat:1:5:9900346:7
GUID0
Full ReferenceHibino, H., Sumitomo, K., Ogino, T. (1998) Growth process of twinned epitaxial layers on Si(111)-B and their thermal stability. Applied Surface Science, 130. 41-46 doi:10.1016/s0169-4332(98)00022-1
Plain TextHibino, H., Sumitomo, K., Ogino, T. (1998) Growth process of twinned epitaxial layers on Si(111)-B and their thermal stability. Applied Surface Science, 130. 41-46 doi:10.1016/s0169-4332(98)00022-1
In(n.d.) Applied Surface Science Vol. 130. Elsevier BV

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Hibino, H., Ogino, T. (1998) Formation of twinned two-bilayer-high islands during initial stages of Si growth on Si(111)-B. Surface Science, 412. 132-140 doi:10.1016/s0039-6028(98)00378-1
Löher, T, Ueno, K, Koma, A (1998) Van der Waals type buffer layers: epitaxial growth of the large lattice mismatch system CdS/InSe/H–Si(111). Applied Surface Science, 130. 334-339 doi:10.1016/s0169-4332(98)00080-4
Ito, T., Umezawa, K., Nakanishi, S. (1998) Epitaxial growth of Ag on Ni(111). Applied Surface Science, 130. 497-500 doi:10.1016/s0169-4332(98)00063-4
Sumitomo, Koji, Nishioka, Takashi, Ogino, Toshio (1998) Dimer structures of Ge/Si(001) and Sb/Si(001) studied by medium-energy ion scattering. Applied Surface Science, 130. 133-138 doi:10.1016/s0169-4332(98)00039-7
Ezoe, K, Kuriyama, H, Yamamoto, T, Ohara, S, Matsumoto, S (1998) Scanning tunnelling microscopy study of initial growth of titanium silicide on Si(111). Applied Surface Science, 130. 13-17 doi:10.1016/s0169-4332(98)00017-8
Mano, T, Fujioka, H, Ono, K, Watanabe, Y, Oshima, M (1998) InAs nanocrystal growth on Si (100). Applied Surface Science, 130. 760-764 doi:10.1016/s0169-4332(98)00150-0
Hasunuma, R., Komeda, T., Tokumoto, H. (1998) Electric properties of nanoscale contacts on Si(111) surfaces. Applied Surface Science, 130. 84-89 doi:10.1016/s0169-4332(98)00030-0
Prabhakaran, K., Sumitomo, K., Ogino, T. (1997) Formation of buried epitaxial CoSi2 layer through diffusion mediated reaction. Applied Surface Science, 117. 280-284 doi:10.1016/s0169-4332(97)80094-3
Yamamoto, T., Ohara, S., Ezoe, K., Kuriyama, H., Ishii, K., Matsumoto, S. (1998) Initial stage of Si(111)-B surface reconstruction studied by scanning tunnelling microscopy. Applied Surface Science, 130. 1-5 doi:10.1016/s0169-4332(98)00015-4
Omori, S, Ishii, H, Nihei, Y (1998) Photoelectron diffraction study on the epitaxial growth of SrF2 on Ge(111)-c(2×8). Applied Surface Science, 130. 67-71 doi:10.1016/s0169-4332(98)00026-9
Ishimaru, T, Shimada, K, Hoshino, T, Kawada, H, Ohdomari, I (1998) Stepwise change in Gibbs free energy curve observed in Si(111) DAS domain growth. Applied Surface Science, 130. 18-22 doi:10.1016/s0169-4332(98)00018-x
 
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