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Mano, T, Fujioka, H, Ono, K, Watanabe, Y, Oshima, M (1998) InAs nanocrystal growth on Si (100). Applied Surface Science, 130. 760-764 doi:10.1016/s0169-4332(98)00150-0

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Reference TypeJournal (article/letter/editorial)
TitleInAs nanocrystal growth on Si (100)
JournalApplied Surface Science
AuthorsMano, TAuthor
Fujioka, HAuthor
Ono, KAuthor
Watanabe, YAuthor
Oshima, MAuthor
Year1998 (June)Volume130
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(98)00150-0Search in ResearchGate
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Mindat Ref. ID9900467Long-form Identifiermindat:1:5:9900467:9
GUID0
Full ReferenceMano, T, Fujioka, H, Ono, K, Watanabe, Y, Oshima, M (1998) InAs nanocrystal growth on Si (100). Applied Surface Science, 130. 760-764 doi:10.1016/s0169-4332(98)00150-0
Plain TextMano, T, Fujioka, H, Ono, K, Watanabe, Y, Oshima, M (1998) InAs nanocrystal growth on Si (100). Applied Surface Science, 130. 760-764 doi:10.1016/s0169-4332(98)00150-0
In(n.d.) Applied Surface Science Vol. 130. Elsevier BV

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Nakamura, M, Shuzo, M, Ono, K, Fujioka, H, Tanaka, M, Nishinaga, T, Watanabe, Y, Oshima, M (1998) The evidence for a preferential growth of a MnAs thin film on an as-preadsorbed Si(001) surface. Applied Surface Science, 130. 128-132 doi:10.1016/s0169-4332(98)00038-5
Oshima, M, Shuzo, M, Ono, K, Fujioka, H, Watanabe, Y, Miyanishi, S, Akinaga, H (1998) Initial stage of Schottky barrier formation of ferromagnetic MnSb(0001) films on GaAs(111)B. Applied Surface Science, 130. 892-898 doi:10.1016/s0169-4332(98)00172-x
Yoshimura, Masamichi, Ono, Izumi, Ueda, Kazuyuki (1998) Initial stages of Ni reaction on Si(100) and H-terminated Si(100) surfaces. Applied Surface Science, 130. 276-281 doi:10.1016/s0169-4332(98)00070-1
Hitosugi, Taro, Hashizume, T, Heike, S, Kajiyama, H, Wada, Y, Watanabe, S, Hasegawa, T, Kitazawa, K (1998) Scanning tunneling microscopy/spectroscopy of dangling-bond wires fabricated on the Si(100)-2Γ—1-H surface. Applied Surface Science, 130. 340-345 doi:10.1016/s0169-4332(98)00081-6
Totsuka, H, Kurtz, E, Hanada, T, Zhu, Z, Yao, T (1998) The effect of surface modification on the formation of quantum structures in highly mismatched heterostructures: InAs on GaAs(100). Applied Surface Science, 130. 742-746 doi:10.1016/s0169-4332(98)00147-0
Ishidzuka, S., Igari, Y., Takaoka, T., Kusunoki, I. (1998) Nitridation of Si(100) surface with NH3. Applied Surface Science, 130. 107-111 doi:10.1016/s0169-4332(98)00034-8
Tsukidate, Y, Suemitsu, M (1998) Adsorption of SiH4 or Si2H6 on P/Si(100) at room temperatures. Applied Surface Science, 130. 282-286 doi:10.1016/s0169-4332(98)00071-3
Hasunuma, R., Komeda, T., Tokumoto, H. (1998) Electric properties of nanoscale contacts on Si(111) surfaces. Applied Surface Science, 130. 84-89 doi:10.1016/s0169-4332(98)00030-0
Hibino, H., Sumitomo, K., Ogino, T. (1998) Growth process of twinned epitaxial layers on Si(111)-B and their thermal stability. Applied Surface Science, 130. 41-46 doi:10.1016/s0169-4332(98)00022-1
Shimizu, M, Hasebe, H, Hongo, S, Ojima, K, Urano, T (1998) Study of the electronic and adsorption structure of Cs and H coadsorption on Si(100)2Γ—1. Applied Surface Science, 130. 271-275 doi:10.1016/s0169-4332(98)00069-5
Jeong, Sukmin, Oshiyama, Atsushi (1998) Barrierless bond breaking and exchange diffusion on Si(100)–H. Applied Surface Science, 130. 287-291 doi:10.1016/s0169-4332(98)00072-5
 
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