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Hitosugi, Taro, Hashizume, T, Heike, S, Kajiyama, H, Wada, Y, Watanabe, S, Hasegawa, T, Kitazawa, K (1998) Scanning tunneling microscopy/spectroscopy of dangling-bond wires fabricated on the Si(100)-2Γ—1-H surface. Applied Surface Science, 130. 340-345 doi:10.1016/s0169-4332(98)00081-6

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Reference TypeJournal (article/letter/editorial)
TitleScanning tunneling microscopy/spectroscopy of dangling-bond wires fabricated on the Si(100)-2Γ—1-H surface
JournalApplied Surface Science
AuthorsHitosugi, TaroAuthor
Hashizume, TAuthor
Heike, SAuthor
Kajiyama, HAuthor
Wada, YAuthor
Watanabe, SAuthor
Hasegawa, TAuthor
Kitazawa, KAuthor
Year1998 (June)Volume130
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(98)00081-6Search in ResearchGate
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Mindat Ref. ID9900404Long-form Identifiermindat:1:5:9900404:0
GUID0
Full ReferenceHitosugi, Taro, Hashizume, T, Heike, S, Kajiyama, H, Wada, Y, Watanabe, S, Hasegawa, T, Kitazawa, K (1998) Scanning tunneling microscopy/spectroscopy of dangling-bond wires fabricated on the Si(100)-2Γ—1-H surface. Applied Surface Science, 130. 340-345 doi:10.1016/s0169-4332(98)00081-6
Plain TextHitosugi, Taro, Hashizume, T, Heike, S, Kajiyama, H, Wada, Y, Watanabe, S, Hasegawa, T, Kitazawa, K (1998) Scanning tunneling microscopy/spectroscopy of dangling-bond wires fabricated on the Si(100)-2Γ—1-H surface. Applied Surface Science, 130. 340-345 doi:10.1016/s0169-4332(98)00081-6
In(n.d.) Applied Surface Science Vol. 130. Elsevier BV

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Hitosugi, Taro, Hashizume, Tomihiro, Heike, Seiji, Watanabe, Satoshi, Wada, Yasuo, Hasegawa, Tetsuya, Kitazawa, Koichi (1997) Scanning Tunneling Spectroscopy of Dangling-Bond Wires Fabricated on the Si(100)-2Γ—1-H Surface. Japanese Journal of Applied Physics, 36. doi:10.1143/jjap.36.l361
Hitosugi, Taro, Heike, S., Onogi, T., Hashizume, T., Watanabe, S., Li, Z.-Q., Ohno, K., Kawazoe, Y., Hasegawa, T., Kitazawa, K. (1999) Jahn-Teller Distortion in Dangling-Bond Linear Chains Fabricated on a Hydrogen-Terminated Si(100)-2Γ—1Surface. Physical Review Letters, 82 (20). 4034-4037 doi:10.1103/physrevlett.82.4034
Hitosugi, Taro, Suwa, Y., Matsuura, S., Heike, S., Onogi, T., Watanabe, S., Hasegawa, T., Kitazawa, K., Hashizume, T. (1999) Direct Observation of One-Dimensional Ga-Atom Migration on a Si(100)-(2Γ—1)-H Surface: A Local Probe of Adsorption Energy Variation. Physical Review Letters, 83 (20). 4116-4119 doi:10.1103/physrevlett.83.4116
Kajiyama, Hiroshi, Heike, Seiji, Hitosugi, Taro, Hashizume, Tomihiro (1998) Initial Backbond Oxidation at an Unpaired Dangling Bond Site on a Hydrogen-Terminated Si(100)2Γ— 1 Surface. Japanese Journal of Applied Physics, 37. doi:10.1143/jjap.37.l1350
Suwa, Yuji, Matsuura, S., Fujimori, M., Heike, S., Onogi, T., Kajiyama, H., Hitosugi, T., Kitazawa, K., Uda, T., Hashizume, T. (2003) Dopant-Pair Structures Segregated on a Hydrogen-Terminated Si(100) Surface. Physical Review Letters, 90 (15). doi:10.1103/physrevlett.90.156101
FUJIMORI, M, SUWA, Y, HEIKE, S, TERADA, Y, HASHIZUME, T (2004) Dihydride chain formation on a Si(100)-2 Γ— 1-H surface. Applied Surface Science, 237. 58-62 doi:10.1016/s0169-4332(04)00990-0
Watanabe, S., Ono, Y.A., Hashizume, T., Wada, Y. (1997) First-principles study of atomic wires on a H-terminated Si(100)-(2 Γ— 1) surface. Surface Science, 386 (1). 340-342 doi:10.1016/s0039-6028(97)00338-5
Mano, T, Fujioka, H, Ono, K, Watanabe, Y, Oshima, M (1998) InAs nanocrystal growth on Si (100). Applied Surface Science, 130. 760-764 doi:10.1016/s0169-4332(98)00150-0
Fukuda, T, Ogino, T (1998) Initial oxidation stage of the Ge(100) 2Γ—1 surface studied by scanning tunneling microscopy and ultra-violet photoelectron spectroscopy. Applied Surface Science, 130. 165-169 doi:10.1016/s0169-4332(98)00044-0
Yamamoto, T., Ohara, S., Ezoe, K., Kuriyama, H., Ishii, K., Matsumoto, S. (1998) Initial stage of Si(111)-B surface reconstruction studied by scanning tunnelling microscopy. Applied Surface Science, 130. 1-5 doi:10.1016/s0169-4332(98)00015-4
Ezoe, K, Kuriyama, H, Yamamoto, T, Ohara, S, Matsumoto, S (1998) Scanning tunnelling microscopy study of initial growth of titanium silicide on Si(111). Applied Surface Science, 130. 13-17 doi:10.1016/s0169-4332(98)00017-8
 
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