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Totsuka, H, Kurtz, E, Hanada, T, Zhu, Z, Yao, T (1998) The effect of surface modification on the formation of quantum structures in highly mismatched heterostructures: InAs on GaAs(100). Applied Surface Science, 130. 742-746 doi:10.1016/s0169-4332(98)00147-0

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Reference TypeJournal (article/letter/editorial)
TitleThe effect of surface modification on the formation of quantum structures in highly mismatched heterostructures: InAs on GaAs(100)
JournalApplied Surface Science
AuthorsTotsuka, HAuthor
Kurtz, EAuthor
Hanada, TAuthor
Zhu, ZAuthor
Yao, TAuthor
Year1998 (June)Volume130
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(98)00147-0Search in ResearchGate
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Mindat Ref. ID9900464Long-form Identifiermindat:1:5:9900464:2
GUID0
Full ReferenceTotsuka, H, Kurtz, E, Hanada, T, Zhu, Z, Yao, T (1998) The effect of surface modification on the formation of quantum structures in highly mismatched heterostructures: InAs on GaAs(100). Applied Surface Science, 130. 742-746 doi:10.1016/s0169-4332(98)00147-0
Plain TextTotsuka, H, Kurtz, E, Hanada, T, Zhu, Z, Yao, T (1998) The effect of surface modification on the formation of quantum structures in highly mismatched heterostructures: InAs on GaAs(100). Applied Surface Science, 130. 742-746 doi:10.1016/s0169-4332(98)00147-0
In(n.d.) Applied Surface Science Vol. 130. Elsevier BV

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Kurtz, E., Jung, H.D., Hanada, T., Zhu, Z., Yao, T. (1998) Properties of self-organized CdSe quantum dots on an atomically flat (111)A ZnSe surface. Applied Surface Science, 130. 755-759 doi:10.1016/s0169-4332(98)00149-4
Mano, T, Fujioka, H, Ono, K, Watanabe, Y, Oshima, M (1998) InAs nanocrystal growth on Si (100). Applied Surface Science, 130. 760-764 doi:10.1016/s0169-4332(98)00150-0
Kawasaki, Koji, Tsutsui, Kazuo (1998) Surface free energy modification of CaF2 by atomic-height island formation on heteroepitaxy of GaAs on CaF2. Applied Surface Science, 130. 464-468 doi:10.1016/s0169-4332(98)00102-0
Ishii, A, Kawamura, T (1998) Kinetics of homoepitaxial growth on GaAs(100) studied by two-component Monte Carlo simulation. Applied Surface Science, 130. 403-408 doi:10.1016/s0169-4332(98)00091-9
Westwood, D.I, Sobiesierski, Z, Matthai, C.C (1999) The dynamics of quantum dot formation in the InAs on GaAs(001) system: growth rate effects. Applied Surface Science, 144. 484-487 doi:10.1016/s0169-4332(98)00845-9
Kurtz, E., Jung, H.D., Hanada, T., Zhu, Z., Sekiguchi, T., Yao, T. (1998) Self-organized CdSe/ZnSe quantum dots on a ZnSe (1 1 1)A surface. Journal of Crystal Growth, 184. 242-247 doi:10.1016/s0022-0248(98)80052-3
Koo, B.H., Park, Y.-G., Makino, H., Chang, J.H., Hanada, T., Shindo, D., Yao, T. (2002) Molecular beam epitaxy growth and characterization of self-assembled InAs quantum dots on (1 0 0) InAlAs/InP substrates. Applied Surface Science, 190. 226-230 doi:10.1016/s0169-4332(01)00876-5
Hasunuma, R., Komeda, T., Tokumoto, H. (1998) Electric properties of nanoscale contacts on Si(111) surfaces. Applied Surface Science, 130. 84-89 doi:10.1016/s0169-4332(98)00030-0
Nagashima, A., Kimura, T., Yoshino, J. (1998) Formation of an ordered surface compound consisting of Ag, Si, and H on Si(001). Applied Surface Science, 130. 248-253 doi:10.1016/s0169-4332(98)00064-6
Hiwatashi, Fumito, Yamaguchi, Koichi (1998) Selective growth of self-organizing InAs quantum dots on strained InGaAs surfaces. Applied Surface Science, 130. 737-741 doi:10.1016/s0169-4332(98)00146-9
Fukuda, T, Ogino, T (1998) Initial oxidation stage of the Ge(100) 2Γ—1 surface studied by scanning tunneling microscopy and ultra-violet photoelectron spectroscopy. Applied Surface Science, 130. 165-169 doi:10.1016/s0169-4332(98)00044-0
 
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