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Westwood, D.I, Sobiesierski, Z, Matthai, C.C (1999) The dynamics of quantum dot formation in the InAs on GaAs(001) system: growth rate effects. Applied Surface Science, 144. 484-487 doi:10.1016/s0169-4332(98)00845-9

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Reference TypeJournal (article/letter/editorial)
TitleThe dynamics of quantum dot formation in the InAs on GaAs(001) system: growth rate effects
JournalApplied Surface Science
AuthorsWestwood, D.IAuthor
Sobiesierski, ZAuthor
Matthai, C.CAuthor
Year1999 (April)Volume144
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(98)00845-9Search in ResearchGate
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Mindat Ref. ID9901207Long-form Identifiermindat:1:5:9901207:6
GUID0
Full ReferenceWestwood, D.I, Sobiesierski, Z, Matthai, C.C (1999) The dynamics of quantum dot formation in the InAs on GaAs(001) system: growth rate effects. Applied Surface Science, 144. 484-487 doi:10.1016/s0169-4332(98)00845-9
Plain TextWestwood, D.I, Sobiesierski, Z, Matthai, C.C (1999) The dynamics of quantum dot formation in the InAs on GaAs(001) system: growth rate effects. Applied Surface Science, 144. 484-487 doi:10.1016/s0169-4332(98)00845-9
In(n.d.) Applied Surface Science Vol. 144. Elsevier BV

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Westwood, D.I., Sobiesierski, Z., Steimetz, E., Zettler, T., Richter, W. (1998) On the development of InAs on GaAs(001) as measured by reflectance anisotropy spectroscopy: continuous and islanded films. Applied Surface Science, 123. 347-351 doi:10.1016/s0169-4332(97)00525-4
Parbrook, P.J., Ozanyan, K.B., Hopkinson, M., Whitehouse, C.R., Sobiesierski, Z., Westwood, D.I. (1998) Surface structure of InP(001) under dynamic and static conditions of molecular beam epitaxy. Applied Surface Science, 123. 313-318 doi:10.1016/s0169-4332(97)00454-6
Ke, Mao-long, Westwood, D.I., Matthai, C.C., Williams, R.H. (1996) Ballistic electron emission microscopy of InAs grown on GaAs(100). Surface Science, 352. 861-864 doi:10.1016/0039-6028(95)01288-5
MORRIS, S.J., BASS, J.M., WESTWOOD, D.I., WOOLF, D.A., MATTHAI, C.C., WILLIAMS, R.H., REINHARDT, F., RUMBERG, J., ROSE, K.C., RICHTER, W. (1994) REFLECTANCE ANISOTROPY OF THE GaAs(001) SURFACE. Surface Review and Letters, 1 (4). 481-484 doi:10.1142/s0218625x94000485
Totsuka, H, Kurtz, E, Hanada, T, Zhu, Z, Yao, T (1998) The effect of surface modification on the formation of quantum structures in highly mismatched heterostructures: InAs on GaAs(100). Applied Surface Science, 130. 742-746 doi:10.1016/s0169-4332(98)00147-0
Matthai, C.C., Moran, G.A. (1998) Adsorption and diffusion of Ga, In and As adatoms on (001) and (111) GaAs surfaces: a computer simulation study. Applied Surface Science, 123. 653-657 doi:10.1016/s0169-4332(97)00442-x
Silveira, J.P., Garcı́a, J.M., Briones, F. (2002) Limited In incorporation during pseudomorphic InAs/GaAs growth and quantum dot formation observed by in situ stress measurements. Applied Surface Science, 188. 75-79 doi:10.1016/s0169-4332(01)00706-1
Bhatti, Q.A., Matthai, C.C. (1998) Critical thickness and growth modes of SiC layers on Si substrates — a molecular dynamics study. Applied Surface Science, 123. 7-10 doi:10.1016/s0169-4332(97)00499-6
Hill, P., Lu, J., Haworth, L., Westwood, D.I., Macdonald, J.E. (1998) An XPS study of the effect of nitrogen exposure time and temperature on the GaAs(001) surface using atomic nitrogen. Applied Surface Science, 123. 126-130 doi:10.1016/s0169-4332(97)00539-4
Ashu, P., Matthai, C.C. (1992) Molecular dynamics simulation of germanium on silicon (001) substrates. Applied Surface Science, 56. 661-664 doi:10.1016/0169-4332(92)90318-r
Anyele, H.T., Griffiths, C.L., Cafolla, A.A., Matthai, C.C., Williams, R.H. (1998) Metal-semiconductor fluctuations on reconstructed SnSi(111) surfaces. Applied Surface Science, 123. 480-484 doi:10.1016/s0169-4332(97)00527-8
 
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