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Kawasaki, Koji, Tsutsui, Kazuo (1998) Surface free energy modification of CaF2 by atomic-height island formation on heteroepitaxy of GaAs on CaF2. Applied Surface Science, 130. 464-468 doi:10.1016/s0169-4332(98)00102-0

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Reference TypeJournal (article/letter/editorial)
TitleSurface free energy modification of CaF2 by atomic-height island formation on heteroepitaxy of GaAs on CaF2
JournalApplied Surface Science
AuthorsKawasaki, KojiAuthor
Tsutsui, KazuoAuthor
Year1998 (June)Volume130
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(98)00102-0Search in ResearchGate
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Mindat Ref. ID9900425Long-form Identifiermindat:1:5:9900425:3
GUID0
Full ReferenceKawasaki, Koji, Tsutsui, Kazuo (1998) Surface free energy modification of CaF2 by atomic-height island formation on heteroepitaxy of GaAs on CaF2. Applied Surface Science, 130. 464-468 doi:10.1016/s0169-4332(98)00102-0
Plain TextKawasaki, Koji, Tsutsui, Kazuo (1998) Surface free energy modification of CaF2 by atomic-height island formation on heteroepitaxy of GaAs on CaF2. Applied Surface Science, 130. 464-468 doi:10.1016/s0169-4332(98)00102-0
In(n.d.) Applied Surface Science Vol. 130. Elsevier BV

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Kawasaki, Koji, Tsutsui, Kazuo (1997) Observations of GaAs/CaF2 heterointerface formation by electron beam surface modification and its effects. Applied Surface Science, 117. 753-757 doi:10.1016/s0169-4332(97)80177-8
Kawasaki, Koji, Tsutsui, Kazuo (1999) Effects of the Two-Step Growth Method for GaAs Grown on CaF2/Si(111) with the Electron Beam Surface Modification Technique. Japanese Journal of Applied Physics, 38. 1521-1525 doi:10.1143/jjap.38.1521
Sarinanto, Mohammad Mustafa, Yamaguchi, Yoji, Tsutsui, Kazuo (1997) ZnSe ionicity control layer inserted in GaAs/CaF2(111) interface. Applied Surface Science, 117. 438-442 doi:10.1016/s0169-4332(97)80121-3
Wollschläger, Joachim, Pietsch, Holger, Klust, Andreas (1998) Competition between terrace and step nucleation: epitaxy of CaF2 on vicinal Si(111) studied by atomic force microscopy. Applied Surface Science, 130. 29-35 doi:10.1016/s0169-4332(98)00020-8
Totsuka, H, Kurtz, E, Hanada, T, Zhu, Z, Yao, T (1998) The effect of surface modification on the formation of quantum structures in highly mismatched heterostructures: InAs on GaAs(100). Applied Surface Science, 130. 742-746 doi:10.1016/s0169-4332(98)00147-0
Hwang, Sang-Man, Miyasato, Keiichiro, Tsutsui, Kazuo (1996) Heteroepitaxy of GaAs on a modified CaF2 surface by an extremely low energy electron beam. Materials Chemistry and Physics, 45. 216-219 doi:10.1016/0254-0584(95)01735-6
Hwang, S.M., Izumi, A., Tsutsui, K., Furukawa, S. (1994) Surface modification of CaF2 in atomic layer scale by electron beam exposure. Applied Surface Science, 82. 523-527 doi:10.1016/0169-4332(94)90268-2
Hwang, Sang-Man, Miyasato, Keiichiro, Kawasaki, Koji, Tsutsui, Kazuo (1996) Effects of Electron Beam Exposure Conditions on the Surface Modification ofCaF2(111) for Heteroepitaxy of GaAs/CaF2Structure. Japanese Journal of Applied Physics, 35. 1701-1705 doi:10.1143/jjap.35.1701
Natori, A, Toda, K, Tanaka, A, Yasunaga, H (1998) Interface atomic structures in alkali halides heteroepitaxy. Applied Surface Science, 130. 616-622 doi:10.1016/s0169-4332(98)00125-1
Sumiya, Touru, Fujinuma, Haruko, Miura, Tadao, Tanaka, Shun-ichiro (1998) Ballistic electron emission microscopy studies of Au/CaF2/n-Si(111) interfaces. Applied Surface Science, 130. 36-40 doi:10.1016/s0169-4332(98)00021-x
Shoji, Daisei, Niwano, Michio, Miyamoto, Nobuo (1997) Low-temperature epitaxial growth of CaF2 on (NH4)2Sx-treated GaAs(100) surface. Applied Surface Science, 117. 443-446 doi:10.1016/s0169-4332(97)80122-5
 
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