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Natori, A, Toda, K, Tanaka, A, Yasunaga, H (1998) Interface atomic structures in alkali halides heteroepitaxy. Applied Surface Science, 130. 616-622 doi:10.1016/s0169-4332(98)00125-1

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Reference TypeJournal (article/letter/editorial)
TitleInterface atomic structures in alkali halides heteroepitaxy
JournalApplied Surface Science
AuthorsNatori, AAuthor
Toda, KAuthor
Tanaka, AAuthor
Yasunaga, HAuthor
Year1998 (June)Volume130
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(98)00125-1Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID9900445Long-form Identifiermindat:1:5:9900445:7
GUID0
Full ReferenceNatori, A, Toda, K, Tanaka, A, Yasunaga, H (1998) Interface atomic structures in alkali halides heteroepitaxy. Applied Surface Science, 130. 616-622 doi:10.1016/s0169-4332(98)00125-1
Plain TextNatori, A, Toda, K, Tanaka, A, Yasunaga, H (1998) Interface atomic structures in alkali halides heteroepitaxy. Applied Surface Science, 130. 616-622 doi:10.1016/s0169-4332(98)00125-1
In(n.d.) Applied Surface Science Vol. 130. Elsevier BV

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Sakamoto, K, Wu, N.-J, Natori, A, Yasunaga, H (2001) Surface electromigration of In on vicinal Si(0 0 1). Applied Surface Science, 169. 480-484 doi:10.1016/s0169-4332(00)00741-8
Natori, A., Harada, H., Wu, Nan-Jian, Yasunaga, H. (2001) Strain effect on surface melting of Si(1 1 1). Applied Surface Science, 169. 20-24 doi:10.1016/s0169-4332(00)00636-x
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Natori, A., Osanai, M., Nakamura, J., Yasunaga, H. (2003) Dynamics of c(4 Γ— 2) phase-transition in Si(1 0 0) surfaces. Applied Surface Science, 212. 705-710 doi:10.1016/s0169-4332(03)00081-3
Gomyo, A, Miyasaka, F, Hotta, H, Fukagai, K, Kobayashi, K (1998) Effects of step bunching on CuPt-B ordered structures in Ga0.5In0.5P grown by MOVPE. Applied Surface Science, 130. 469-474 doi:10.1016/s0169-4332(98)00103-2
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